M. Gazicki-Lipman

High‐Performance Single Crystal Organic Field‐Effect Transistors Based on Two Dithiophene‐Tetrathiafulvalene (DT‐TTF) Polymorphs

Solution prepared single crystal organic field-effect transistors (OFETs) combine low-cost with high performance due to structural ordering of molecules. However, in organic crystals polymorphism is a known phenomenon, which can have a crucial influence on charge transport. Here, the performance of solution-prepared single crystal OFETs based on two different polymorphs of dithiophene-tetrathiafulvalene, which were investigated by confocal Raman spectroscopy and X-ray diffraction, are reported. OFET devices prepared using different configurations show that both polymorphs exhibited excellent device performance, although the -phase revealed charge carrier mobility between two and ten times higher in accordance to the closer stacking of the molecules.

Parylene C as a versatile dielectric material for organic field-effect transistors

An emerging new technology, organic electronics, is approaching the stage of large-scale industrial application. This is due to a remarkable progress in synthesis of a variety of organic semiconductors, allowing one to design and to fabricate, so far on a laboratory scale, different organic electronic devices of satisfactory performance. However, a complete technology requires upgrading of fabrication procedures of all elements of electronic devices and circuits, which not only comprise active layers, but also electrodes, dielectrics, insulators, substrates and protecting/encapsulating coatings. In this review, poly(chloro-para-xylylene) known as Parylene C, which appears to become a versatile supporting material especially suitable for applications in flexible organic electronics, is presented. A synthesis and basic properties of Parylene C are described, followed by several examples of use of parylenes as substrates, dielectrics, insulators, or protecting materials in the construction of organic field-effect transistors.

Thin SixNyCz films deposited from hexamethyldisilazane by RF PECVD technique for optical filter applications

Abstract This work initiates a series of reports aimed at a construction of rugate optical filters based on silicon rich materials of alternating gradients of refractive index n with the help of plasma enhanced chemical vapor deposition (PECVD) technique, The idea is to start deposition of high refractive index SixNy type of material using hexamethyldisilazane (HMDSN) vapor and nitrogen rich atmosphere, and then to gradually replace nitrogen with oxygen in that atmosphere in order to lower n down to a minimum characteristic of SixOy type of material. A return to initial gas composition should increase the index back to its maximum. In the present work, thin SixNyCz films were synthesized from a mixture of HMDSN vapor with gaseous NH3 and N2. The effect of NH3/N2 ratio on the coating morphology, its elemental composition, chemical bonding and optical properties was studied using scanning electron microscopy, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, ultra-violet absorption spectroscopy and variable angle spectroscopic ellipsometry. The results show that films of the highest index of refraction and the lowest extinction coefficient have been deposited from the gas mixture containing 90 % of ammonia. These coatings are also characterized by the lowest carbon and the highest nitrogen contents.