M. H. Xie

Different origins of visible luminescence in ZnO nanostructures fabricated by the chemical and evaporation methods

We prepared ZnO nanostructures using chemical and thermal evaporation methods. The properties of the fabricated nanostructures were studied using scanning electron microscopy, x-ray diffraction, photoluminescence, and electron paramagnetic resonance (EPR) spectroscopy. It was found that the luminescence in the visible region has different peak positions in samples prepared by chemical and evaporation methods. The samples fabricated by evaporation exhibited green luminescence due to surface centers, while the samples fabricated by chemical methods exhibited yellow luminescence which was not affected by the surface modification. No relationship was found between green emission and g∼1.96 EPR signal, while the sample with yellow emission exhibited strong EPR signal.

Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire

The stress states in unintentionally doped GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire, and their effects on optical properties of GaN films were investigated by means of room-temperature confocal micro-Raman scattering and photoluminescence techniques. Relatively large tensile stress exists in GaN epilayers grown on Si and 6H-SiC while a small compressive stress appears in the film grown on sapphire. The latter indicates effective strain relaxation in the GaN buffer layer inserted in the GaN/sapphire sample, while the 50-nm-thick AlN buffer adopted in the GaN/Si sample remains highly strained. The analysis shows that the thermal mismatch between the epilayers and the substrates plays a major role in determining the residual strain in the films. Finally, a linear coefficient of 21.1+/-3.2 meV/GPa characterizing the relationship between the luminescent bandgap and the biaxial stress of the GaN films is obtained

Magnetic properties of Mn doped ZnO tetrapod structures

ZnO tetrapod nanostructures were prepared by evaporating Zn metal under humid argon flow. After the fabrication, Mn diffusion doping was performed at two different temperatures (600 and 800 °C). The samples were characterized by scanning electron microscopy, transmission electron microscopy, x-ray fluorescence, x-ray diffraction (XRD), superconducting quantum interference device magnetometer, and photoluminescence. Diffusion doping resulted in the increase of the size of tetrapods, but no new peaks were found in XRD spectrum. Mn doped ZnO tetrapod structures were found to be ferromagnetic with Curie temperature ∼50 K, and showed large coercive field (∼3500 Oe for 800 °C sample, ∼5500 Oe for 600 °C sample).

Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys

Temperature-dependent photoluminescence measurements have been carried out in zinc-blende InGaN epilayers grown on GaAs substrates by metalorganic vapor-phase epitaxy. An anomalous temperature dependence of the peak position of the luminescence band was observed. Considering thermal activation and the transfer of excitons localized at different potential minima, we employed a model to explain the observed behavior. A good agreement between the theory and the experiment is achieved. At high temperatures, the model can be approximated to the band-tail-state emission model proposed by Eliseev et al. [Appl. Phys. Lett. 71, 569 (1997)]

Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy

Epitaxial growth of InN on GaN(0001) by plasma-assisted molecular-beam epitaxy is investigated over a range of growth parameters including source flux and substrate temperature. Combining reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM), we establish a relationship between film growth mode and the deposition condition. Both two-dimensional (2D) and three-dimensional (3D) growth modes of the film are observed. For 2D growth, sustained RHEED intensity oscillations are recorded while STM reveals 2D nucleation islands. For 3D growth, less than three oscillation periods are observed indicating the Stranski-Krastanov (SK) growth mode of the film. Simultaneous measurements of (reciprocal) lattice constant by RHEED suggest a gradual relaxation of the strain in film, which commences during the first bilayer (BL) deposition and almost completes after 2-4 BLs. For SK growth, 3D islanding initiates after the strain has mostly been relieved, presumably by dislocations, so the islands are likely strain free

Titania-nanotube-array-based photovoltaic cells

Dye-sensitized solar cells based on perpendicular titania nanotube arrays were fabricated. Titania nanotube arrays were prepared by anodization of Ti foil. The cell performance as a function of nanotube length and anodization method was investigated. Short circuit current density and cell efficiency increased with the nanotube length. Device performance was also affected by anodization method, spacer layer thickness, and annealing conditions. With optimized device structure and titania annealing procedure, short circuit current density of 3.28mA∕cm2 could be achieved under AM 1.5 simulated solar irradiation.

Efficient multiphoton-absorption-induced luminescence in single-crystalline ZnO at room temperature.

At room temperature, multiphoton absorption- (MPA-) induced photoluminescence in ZnO strongly driven by a femtosecond (fs) near-infrared laser is studied. Two-photon absorption and three-photon absorption are proved to be responsible for the intense luminescence, when the wavelength of the fs excitation laser is above and below the half-bandgap of ZnO, respectively. Strong MPA absorption in ZnO is unambiguously evidenced by the interferometric autocorrelation measurements of the luminescence signal.

Reduction of threading defects in GaN grown on vicinal SiC(0001) by molecular-beam epitaxy

We observe a significant reduction of threading dislocations in GaN grown on vicinal substrates of SiC(0001). Using scanning tunneling microscopy, we find films grown on vicinal substrates maintain the surface misorientation of the substrate and display terraces with straight edges. On top of the terraces there is no spiral mound, which is the main feature found for films grown on singular substrates. Transmission electron microscopy studies confirm that threading screw dislocations are reduced by two orders of magnitude while edge dislocations are reduced by one order.

Growth mechanism of stacked-cone and smooth-surface GaN nanowires

Gallium nitride (GaN) nanowires were grown on uncoated or Ni-coated Si substrates by evaporation of Ga in NH3∕Ar gas flow. A mixture of nanowires growing along [101¯0] and [0001] was obtained, where the former showed smooth surfaces and the latter showed the stacked-cone morphology. The yield of the two types of nanowires was found to depend on the NH3 flow. The reduction of NH3 flow led to fewer stacked-cone nanowires. The growth mechanisms of the two types of GaN nanowires are discussed.

X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices

We report on the characterization of thermally induced interdiffusion in InAs/GaAs quantum-dot superlattices with high-resolution x-ray diffraction and photoluminescence techniques. The dynamical theory is employed to simulate the measured x-ray diffraction rocking curves of the InAs/GaAs quantum-dot superlattices annealed at different temperatures. Excellent agreement between the experimental curves and the simulations is achieved when the composition, thickness, and stress variations caused by interdiffusion are taken in account. It is found that the significant In-Ga intermixing occurs even in the as-grown InAs/GaAs quantum dots. The diffusion coefficients at different temperatures are estimated