M. Häffner

Influence of temperature on HSQ electron-beam lithography

The authors present a study of the influence of temperature on hydrogen silsesquioxane (HSQ) e-beam lithography during drying, developing, and postdevelopment baking. In accordance with the observation that tempering at relatively low temperatures can already lead to noticeable cross-linking, comparable to the effect of e-beam exposure, the authors find that decreasing the prebake temperature below 90°C and drying the HSQ resist at room temperature in vacuum yields better resolution compared with resist that was dried in a furnace or on a hotplate at 90°C or above. Developing the exposed resist not at room temperature (23°C) but at 60°C results in significant contrast enhancement. Further solidification of the developed resist is obtained by baking the material above 300°C. Correlations between these findings and IR data are presented.

Three-dimensional optical antennas: Nanocones in an apertureless scanning near-field microscope

A sharp-tipped gold nanocone and the vertically aligned metallic tip of a near-field optical microscope together form a three-dimensional optical antenna with a highly controllable gap. Confocal measurements with different laser modes show the efficient axial excitation of the cones with a longitudinally polarized field. In the antenna configuration, extremely strong field enhancement up to a factor of 100 is obtained by tuning the gap between the two sharp tips down to few nanometers.

Tailoring gold nanostructures for near-field optical applications

A method of combined thin-film deposition, electron beam lithography, and ion milling is presented for the fabrication of gold and silver nanostructures. The flexibility of lithographical processes for the variation of geometric parameters is combined with three-dimensional control over the surface evolution. Depending on the etching angle, different shapes ranging from cones over rods to cups can be achieved. These size- and shape-tunable structures present a toolbox for nano-optical investigations. As an example, optical properties of systematically varying structures are examined in a parabolic mirror confocal microscope.

Cold-atom scanning probe microscopy

Scanning probe microscopes are widely used to study surfaces with atomic resolution in many areas of nanoscience. Ultracold atomic gases trapped in electromagnetic potentials can be used to study electromagnetic interactions between the atoms and nearby surfaces in chip-based systems. Here we demonstrate a new type of scanning probe microscope that combines these two areas of research by using an ultracold gas as the tip in a scanning probe microscope. This cold-atom scanning probe microscope offers a large scanning volume, an ultrasoft tip of well-defined shape and high purity, and sensitivity to electromagnetic forces (including dispersion forces near nanostructured surfaces). We use the cold-atom scanning probe microscope to non-destructively measure the position and height of carbon nanotube structures and individual free-standing nanotubes. Cooling the atoms in the gas to form a Bose-Einstein condensate increases the resolution of the device.

Catalyst patterning for carbon nanotube growth on elevating posts by self-aligned double-layer electron beam lithography

For gas-flow aligned growth of carbon nanotubes (CNTs), it is important to minimize interaction of the growing CNTs with the substrate. The authors present a method to fabricate thin catalyst films on top of protruding hydrogen silsesquioxane (HSQ) patterns. Self-alignment of the catalyst film with the HSQ pattern is achieved by exposing two layers of resist, polymethyl methacrylate (PMMA) on top of HSQ, simultaneously. By selecting appropriate development parameters for PMMA and HSQ, a common exposure dose can be applied. After a standard lift-off process HSQ is developed and CNTs are grown on the protruding HSQ patterns resulting in gas-flow aligned CNTs that can be further processed, e.g., for the fabrication of CNT based transistors.

Characterization of the morphology and composition of commercial negative resists used for lithographic processes

We present a spectroscopic and microscopic characterization of the chemical composition, structure, and morphology of two commercial negative resists using Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). For this purpose, films of a novolak-based resist (ma-N 2400) and hydrogen silsesquioxane (HSQ) are treated under different conditions (temperature, deep ultraviolet (DUV) exposure, CHF3 plasma). Topographic AFM images show that both heating and DUV exposure strongly affect the surface morphology of as-prepared ma-N 2400 resist films. These different treatment conditions also lead to decreasing roughnesses, which indicates structural reorganization. Furthermore, the decrease of the photoactive compound (bisazide) in the ma-N 2400 resist films, observed in FTIR spectra, suggests cross-linking of the resist after CHF3 plasma treatment, heating, or DUV exposure. XPS measurements on different CHF3 plasma-treated surfaces reveal that a structurally homogeneous fluorine-containing polymer is generated that is responsible for an enhanced etch resistance. FTIR measurements of HSQ films show a correlation between the degree of HSQ cross-linking and baking time.