M. K. Agarwal
Sardar Patel University
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Publication
Featured researches published by M. K. Agarwal.
Journal of Materials Science Letters | 1990
M. K. Agarwal; V. V. Rao
This letter reports the fabrication and evaluation of p-WSe 2 -based photoelectrochemical cells
Bulletin of Materials Science | 1980
M. K. Agarwal; H B Patel; T C Patel
A realistic estimation of growth and deformation fault probability has been made in the crystals of WSe2 grown by a direct vapour transport method. Electron microscopy of the specimens revealed the presence of two-fold ribbons from which theγ/μ ratio has been determined. Attempts to study polytypism have also been described.
Journal of Materials Science Letters | 1990
M. K. Agarwal; G. H. Yousefi
Etude du pouvoir thermoelectrique et de la conductivite electrique dans les monocristaux Mo 1−x W x Se 2 (0≤x≤1). Une augmentation de la teneur en W conduit a une decroissance du coefficient de Seebeck associee a une augmentation de lenergie dactivation thermique de la conduction extrinseque
Journal of Physics D | 1977
M. K. Agarwal; T C Patel; H B Patel
Transmission electron microscopic studies of thin crystals of MoSe2 have revealed the presence of hohlstellens. Selected-area diffraction patterns taken from the regions containing the hohlstellens have shown the presence of superlattices in MoSe2 at room temperature. The results are discussed.
Journal of Materials Science | 1974
M. K. Agarwal; Babu Joseph
An etchant to reveal the non-basal dislocations on the (0001) faces of MoS2 single crystals has been established. Evidence concerning the ability of this etchant to reveal the sites of non-basal screw dislocations is also given.
Journal of Materials Science | 1982
M. K. Agarwal; J.D. Kshatriya; P. D. Patel; P.K. Garg
Etching and dissolution kinetics of MoSe2 single crystals in aqueous chromic acid at different concentrations and temperatures have been studied. The dependence of the etch rate upon the concentration and temperature of the etchant has been established. The mechanism of the process of dissolution has been explained on the basis of an oxidation-reduction process. The process of etching has been found to be purely diffusion controlled.
Journal of Physics D | 1976
M. K. Agarwal; Babu Joseph
Dislocations in thin flakes of MoSe2 single crystals have been observed with a transmission electron microscope. It has been found that dislocations occur as (i) two-fold ribbons having different stacking fault widths, (ii) extended nodes, (iii) undissociated dislocations. An estimation of gamma / mu from the width of the dislocation ribbons and from the radius of the extended nodes suggests that the dislocations of MoSe2 can be classified into three different types.
Journal of Materials Science Letters | 1993
G. H. Yousefi; M. K. Agarwal
Journal of Materials Science Letters | 1993
G. H. Yousefi; M. K. Agarwal
Journal of Materials Science Letters | 1989
M. K. Agarwal; Pravin M. Patel; Sarvin S. Patel