M. Kouda

Hard X-ray Detector (HXD) on board Suzaku

The Hard X-ray Detector (HXD) on board Suzaku covers a wide energy range from 10 keV to 600 keV by combination of silicon PIN diodes and GSO scintillators. The HXD is designed to achieve an extremely low in-orbit back ground based on a combination of new techniques, including the concept of well-type active shield counter. With an effective area of 142 cm^2 at 20 keV and 273 cm2 at 150 keV, the background level at the sea level reached ~1x10^{-5} cts s^{-1} cm^{-2} keV^{-1} at 30 keV for the PI N diodes, and ~2x10^{-5} cts s^{-1} cm^{-2} keV^{-1} at 100 keV, and ~7x10^{-6} cts s^{-1} cm^{-2} keV^{-1} at 200 keV for the phoswich counter. Tight active shielding of the HXD results in a large array of guard counters surrounding the main detector parts. These anti-coincidence counters, made of ~4 cm thick BGO crystals, have a large effective area for sub-MeV to MeV gamma-rays. They work as an excellent gamma-ray burst monitor with limited angular resolution (~5 degree). The on-board signal-processing system and the data transmitted to the ground are also described.

High-resolution CdTe detector and applications to imaging devices

Using a high quality cadmium telluride (CdTe) wafer, we formed a Schottky junction and operated the detector as a diode (CdTe diode). The low leakage current of the CdTe diode allows us to apply a much higher bias voltage than was possible with the previous CdTe detectors. For a relatively thin detector of /spl sim/0.5 mm thick, the high bias voltage results in a high electric field in the device. Both the improved charge collection efficiency and the low-leakage current lead to an energy resolution of 1.1 keV FWHM at 60 keV for a 2/spl times/2 mm/sup 2/ device and 2 keV for a 10/spl times/10 mm/sup 2/ device at 5/spl deg/C without any charge-loss correction electronics. For astrophysical applications, we have developed a an initial prototype CdTe pixel detector based on the CdTe diode. The detector has 400 pixels with a pixel size of 625/spl times/625 /spl mu/m/sup 2/. Each pixel is gold-stud bonded to a fanout board and routed to a front end ASIC to measure pulse height information for each /spl gamma/-ray photon.

Improvements of the astro-E2 hard X-ray detector (HXD-II)

We summarize significant improvements which have been achieved in the development of Astro-E2 Hard X-ray Detector (HXD-II). An expanded energy range and better energy resolution have been achieved from progresses in device materials and redesigning of the front-end electronics. An improved estimation for the detector background in orbit has also been conducted based upon results from our proton irradiation experiment. The sensitivity of HXD-II can be expected to reach an order of 10/sup -6/ [cs/sup -1/ keV/sup -1/ cm/sup -2/].

Large-area CdTe diode detector for space application

Abstract The current status of Schottky CdTe diode detectors, especially in view of their space application for hard X-ray and gamma-ray astronomy, are reported. For practical use in space science, a large-area CdTe diode with a size of 21.5×21.5 mm 2 and a thickness of 0.5 mm was developed. A good energy resolution, 2.8 keV (FWHM) at −20°C, and high homogeneity to within 0.2% over the detector were achieved for the spectral performance. This device has successfully passed a series of tests required for its use in space, in view of utilizing Japanese M-V rockets. The tests include the mechanical environment test, vacuum test, long run for weeks and proton-beam radiation. Initial results from a 2×2 segmented electrode large-area device with a guard-ring are also presented.

Performance of the ASTRO-E hard X-ray detector

This paper summarizes the design and performance of the hard X-ray detector constructed for the ASTRO-E satellite. The detector utilizes the GSO/BGO well-type phoswich counters in a compound-eye configuration to achieve an extremely low background level of a few /spl times/ 10/sup -5/ counts s/sup -1/ cm/sup -2/ keV/sup -1/. The GSO scintillators installed in the BGO active shield wells are sensitive to 30-600 keV photons, while the 2-mm-thick silicon PIN diodes, placed in front of each GSO crystal, cover the 10-60 keV energy band with a spectral resolution of /spl sim/3.5-keV full-width at half-maximum. The design goals, of both low background and high energy resolution, in the hard X-ray bands were verified through the preflight calibration experiments.

CdTe stacked detectors for gamma-ray detection

We describe a stacked detector made of thin cadmium telluride (CdTe) diode detectors. By using a thin CdTe device, we can overcome the charge loss problem due to the small mobility and short lifetime of holes in CdTe or cadmium zinc telluride (CdZnTe) detectors. However, a CdTe detector with a thickness of more than 5 mm is needed for adequate detection efficiency for gamma-rays of several hundred keV. Good energy resolution and good peak detection efficiency are difficult to obtain using such a thick CdTe detector. The stacked detector enabled us to realize a detector with both high-energy resolution and good efficiencies for gamma rays up to several hundred keV. In order to verify this concept, we constructed a prototype made of ten layers of a 0.5-mm-thick CdTe diode detectors with a surface area of 21.5 mm/spl times/21.5 mm. With this, we have achieved 5.3-keV and 7.9-keV energy resolution [full width at half maximum (FWHM)] at 356 keV and 662 keV, respectively, at the temperature of -20/spl deg/C.

A counting CdTe pixel detector for hard X-ray and /spl gamma/-ray imaging

A 0.5-mm-thick cadmium telluride (CdTe) semiconductor pixel sensor with 1024 pixels has been bump-bonded onto a two-dimensional (2-D) single photon counting pixel read out chip (MPEC 2.1) using a special gold-stud technique. The pixel size is 200 /spl times/ 200 /spl mu/m/sup 2/, the active area is 6.4 /spl times/ 6.4 mm/sup 2/. The successful operation of this high-Z imaging pixel device is demonstrated. Noise and threshold dispersion as well as the imaging performance are reported.

Activation properties of Schottky CdTe diodes irradiated by 150 MeV protons

With its high stopping power, Cadmium Telluride (CdTe) has been regarded as a promising semiconductor material for the next generation X//spl gamma/-ray detectors, and improved significantly during this decade. In order to apply this device to astrophysics, it is essential to investigate the radiation hardness and background properties induced by cosmic-ray protons. We irradiated Schottky CdTe diodes and a CdTe block with a beam of mono-energetic (150 MeV) protons. The induced radio-activation in CdTe was measured externally with a germanium detector, and internally with the irradiated CdTe diode itself. We successfully identified most of radioactive isotopes induced mainly via (p, xn) reactions, and confirmed that activation background level of the CdTe diode is sufficiently low in orbit. We compared energy resolution and leakage current before and after the irradiation, and also monitored the signals from a calibration source during the irradiation. There have been no significant degradation. CdTe diodes are enough tolerant to radioactivity in orbit.