M. Krammer

Review of the development of diamond radiation sensors

Abstract Diamond radiation sensors produced by chemical vapour deposition are studied for the application as tracking detectors in high luminosity experiments. Sensors with a charge collection distance up to 250 μm have been manufactured. Their radiation hardness has been studied with pions, proton and neutrons up to fluences of 1.9×10 15 π cm −2 , 5×10 15 p cm −2 and 1.35×10 15 n cm −2 , respectively. Diamond micro-strip detectors with 50 μm pitch have been exposed in a high-energy test beam in order to investigate their charge collection properties. The measured spatial resolution using a centre-of-gravity position finding algorithm corresponds to the digital resolution for this strip pitch. First results from a strip tracker with a 2×4 cm 2 surface area are reported as well as the performance of a diamond tracker read out by radiation-hard electronics with 25 ns shaping time. Diamond pixel sensors have been prepared to match the geometries of the recently available read-out chip prototypes for ATLAS and CMS. Beam test results are shown from a diamond detector bump-bonded to an ATLAS prototype read-out. They demonstrate a 98% bump-bonding efficiency and a digital resolution in both dimensions.

Radiation tolerance of single-sided silicon microstrips

Abstract The RD20 collaboration is investigating the design and operation of an LHC inner tracking detector based on silicon microstrips. Measurements have been made on prototype detectors after irradiation with electrons, neutrons, photons, and protons for doses up to 5 Mrad and fluences up to 10 15 particles/cm 2 . The annealing of effective doping changes caused by high neutron fluences, one of the major limits to detector lifetime at the LHC, is shown to be strongly inhibited by cooling below room temperature. Detailed results are presented on the critical issue of microstrip capacitance. We have also investigated bulk damage caused by high-energy protons, interstrip isolation after neutron irradiation, and MOS capacitors irradiated with electrons and photons.

Status of the R&D activity on diamond particle detectors

Chemical Vapor Deposited (CVD) polycrystalline diamond has been proposed as a radiation-hard alternative to silicon in the extreme radiation levels occurring close to the interaction region of the Large Hadron Collider. Due to an intense research effort, reliable high-quality polycrystalline CVD diamond detectors, with up to 270μm charge collection distance and good spatial uniformity, are now available. The most recent progress on the diamond quality, on the development of diamond trackers and on radiation hardness studies are presented and discussed.

Tracking with CVD diamond radiation sensors at high luminosity colliders

Recent progress on developing diamond-based sensors for vertex detection at high luminosity hadron colliders is described. Measurements of the performance of diamond sensors after irradiation to fluences of up to 5/spl times/10/sup 15/ hadrons/cm/sup 2/ are shown. These indicate that diamond sensors will operate at distances as close as 5 cm from the interaction point at the Large Hadron Collider (LHC) for many years at full luminosity without significant degradation in performance. Measurements of the quality of the signals from diamond sensors as well as spatial uniformity are presented. Test beam results on measurements of diamond-based microstrip and pixels devices are described.

CVD diamond sensors for charged particle detection

Abstract CVD diamond material was used to build position-sensitive detectors for single-charged particles to be employed in high-intensity physics experiments. To obtain position information, metal contacts shaped as strips or pixels are applied to the detector surface for one- or two-dimensional coordinate measurement. Strip detectors 2×4 cm2 in size with a strip distance of 50 μm were tested. Pixel detectors of various pixel sizes were bump bonded to electronics chips and investigated. A key issue for the use of these sensors in high intensity experiments is the radiation hardness. Several irradiation experiments were carried out with pions, protons and neutrons exceeding a fluence of 1015 particles/cm2. The paper presents an overview of the results obtained with strip and pixel detectors in high-energy test beams and summarises the irradiation studies.

The DELPHI very forward tracker for LEP200

Abstract The design of a new silicon tracker detector for the forward region in the DELPHI experiment is presented. It consists of two layers of macropixel and two layers of ministrip detectors in both the forward directions. The motivations and the requirements for this detector will be shown together with test beam results.

Performance of irradiated CVD diamond micro-strip sensors

Abstract CVD diamond detectors are of interest for charged particle detection and tracking due to their high radiation tolerance. In this article, we present, for the first time, beam test results from recently manufactured CVD diamond strip detectors and their behavior under low doses of electrons from a β-source and the performance before and after intense (>10 15 /cm 2 ) proton- and pion-irradiations. We find that low dose irradiation increase the signal-to-noise ratio (pumping of the signal) and slightly deteriorate the spatial resolution. Intense irradiation with protons 2.2×10 15 p / cm 2 lowers the signal-to-noise ratio slightly. Intense irradiation with pions 2.9×10 15 π / cm 2 lowers the signal-to-noise ratio more. The spatial resolution of the diamond sensors improves after irradiations.

Micro-strip sensors based on CVD diamond

Abstract In this article we present the performance of recent chemical vapour deposition (CVD) diamond micro-strip sensors in beam tests. In addition, we present the first comparison of a CVD diamond micro-strip sensor before and after proton irradiation.

Influence of the electric field on compensation in a uranium/tetramethylpentane hadronic calorimeter

Abstract A uranium tetramethylpentane hadronic calorimeter has been tested using electrons and pions of 7 GeV/ c momentum with electric fields varying from 0.8 to 16.0 kV/cm; the e/π charge collection ratio has been measured as a function of the electric field within this range. It is observed that the e/π ratio can be tuned acting on the electric field without spoiling the energy resolution for electrons. At the same time the energy resolution for pions is improved. The effect was cross-checked using a second module and 40 GeV/ c electron and pion beams.

Measuring doping profiles of silicon detectors with a custom-designed probe station

Silicon detectors are often used in High Energy Physics (HEP) experiments as tracking and vertexing devices. Many scientific institutes are equipped with setups able to electrically characterize those detectors e.g. for quality assurance reasons. Such probe stations can be easily extended to measure resistivities and doping profiles in the bulk material and in doped regions by using the Spreading Resistance Probe (SRP) technique. After an introduction to the method, this paper describes how an existing probe station, that has been used for electrical measurements on strip detectors, has been modified to perform SRP measurements. The presented results prove that the method is reliable and capable of characterizing doping regions as thin as one micron. Beside profiling implants, SRP measurements have the potential to deliver the basis for investigations of bulk material defects in heavily irradiated samples.