M. M. de Lima

Compact Mach-Zehnder acousto-optic modulator

The authors demonstrate a compact optical waveguide modulator based on a Mach-Zehnder interferometer driven by surface acoustic waves. The modulator was monolithically fabricated on GaAs with an active region length of approximately 15μm. It yields peak-to-peak modulation exceeding 90% of the average transmission and operation in the gigahertz frequency range.

F-centre luminescence in nanocrystalline CeO2

Nanocrystalline CeO2 powders were synthesized by two cost-effective methods: the self-propagating room temperature (SPRT) method and the precipitation method. Differently prepared samples exhibited different temperature-dependent photoluminescence (PL) in the ultraviolet and visible regions. The PL signals originated from different kinds of oxygen-deficient defect centres with or without trapped electrons (F0, F+ or F++ centres). The temperature-dependent PL spectra were measured using different excitation lines, below (457, 488 and 514?nm) or comparable (325?nm) to the ceria optical band gap energy, in order to investigate the positions of intragap localized defect states. Evidence for the presence of F+ centres was supported by the signals observed in electron paramagnetic resonance (EPR) measurements. Based on PL and EPR measurements it was shown that F+ centres dominate in the CeO2 sample synthesized by the SPRT method, whereas F0 centres are the major defects in the CeO2 sample synthesized by the precipitation method. The luminescence from F++ states, as shallow trap states, was registered in both samples. Energy level positions of these defect states in the ceria band gap were proposed.

Focusing of surface-acoustic-wave fields on (100) GaAs surfaces

Focused surface-acoustic waves (SAWs) provide a way to reach intense acoustic fields for electro- and optoacoustic applications on semiconductors. We have investigated the focusing of SAWs by interdigital transducers (IDTs) deposited on (100)-oriented GaAs substrates. The focusing IDTs have curved fingers designed to account for the acoustic anisotropy of the substrate. Different factors that affect focusing, such as the aperture angle and the configuration of the IDT fingers, were systematically addressed. We show that the focusing performance can be considerably improved by appropriate choice of the IDT metal pads, which, under appropriate conditions, create an acoustic waveguide within the IDT. We demonstrate the generation of narrow (full width at half maximum of approx 15 μm), high-frequency (0.5 GHz), continuous SAW beams with vertical displacement as high as 4 nm collimated over distances that exceed 100 μm.

Active photonic crystals based on surface acoustic waves

An active photonic crystal (PC) based on the modulation of a one-dimensional cavity resonator by electrically-generated surface acoustic waves is described. The high nonthermal population of surface modes combined with the enhanced Brillouin scattering in the cavity increases the intensity of the scattered light to values comparable to the excitation intensity. This process is employed to switch and modulate light beams in PCs.

Acoustically Driven Photon Antibunching in Nanowires

The oscillating piezoelectric field of a surface acoustic wave (SAW) is employed to transport photoexcited carriers, as well as to spatially control exciton recombination in GaAs-based nanowires (NWs) on a subns time scale. The experiments are carried out in core-shell NWs transferred to a SAW delay line on a LiNbO(3) crystal. Carriers generated in the NW by a focused laser spot are acoustically transferred to a second location, leading to the remote emission of subns light pulses synchronized with the SAW phase. The dynamics of the carrier transport, investigated using spatially and time-resolved photoluminescence, is well-reproduced by computer simulations. The high-frequency contactless manipulation of carriers by SAWs opens new perspectives for applications of NWs in opto-electronic devices operating at gigahertz frequencies. The potential of this approach is demonstrated by the realization of a high-frequency source of antibunched photons based on the acoustic transport of electrons and holes in (In,Ga)As NWs.

Optical emission of InAs nanowires

Wurtzite InAs nanowire samples grown by chemical beam epitaxy have been analyzed by photoluminescence spectroscopy. The nanowires exhibit two main optical emission bands at low temperatures. They are attributed to the recombination of carriers in quantum well structures, formed by zincblende-wurtzite alternating layers, and to the donor-acceptor pair. The blue-shift observed in the former emission band when the excitation power is increased is in good agreement with the type-II band alignment between the wurtzite and zincblende sections predicted by previous theoretical works. When increasing the temperature and the excitation power successively, an additional band attributed to the band-to-band recombination from wurtzite InAs appears. We estimated a lower bound for the wurtzite band gap energy of approximately 0.46 eV at low temperature.

Embedded interdigital transducers for high-frequency surface acoustic waves on GaAs

We investigate high-performance, high-frequency interdigital transducers (IDTs) for the generation of surface acoustic waves (SAWs) on GaAs substrates, where the metal fingers are embedded in the substrate. We demonstrate that the acoustic reflections and the scattering of the surface modes into the substrate become considerably reduced in these transducers, leading to an increased output power. The finger embedding process is particularly relevant for the generation of powerful beams of high-frequency SAWs on weak piezoelectric substrates (such as most of the semiconducting materials) using long IDTs. We also show that the reflection reduction is important for the design of focusing single-finger IDTs, since it minimizes the effects of the finger grating on the angular dependence of the phase velocity.

Acousto-optical multiple interference switches

The authors introduce an alternative approach for acousto-optical light control based on the interference of light propagating through several waveguides, each subjected to a periodic refractive index modulation induced by a surface acoustic wave. The feasibility of the concept is demonstrated by the realization of an optical switch for arbitrary time intervals with an on/off contrast ratio of 20.

Defect spectroscopy of single ZnO microwires

The point defects of single ZnO microwires grown by carbothermal reduction were studied by microphotoluminescence, photoresistance excitation spectra, and resistance as a function of the temperature. We found the deep level defect density profile along the microwire showing that the concentration of defects decreases from the base to the tip of the microwires and this effect correlates with a band gap narrowing. The results show a characteristic deep defect levels inside the gap at 0.88 eV from the top of the VB. The resistance as a function of the temperature shows defect levels next to the bottom of the CB at 110 meV and a mean defect concentration of 4 × 1018 cm−3. This combination of techniques allows us to study the band gap values and defects states inside the gap in single ZnO microwires and opens the possibility to be used as a defect spectroscopy method.

Optical phonon modes of wurtzite InP

Optical vibration modes of InP nanowires in the wurtzite phase were investigated by Raman scattering spectroscopy. The wires were grown along the [0001] axis by the vapor-liquid-solid method. The A1(TO), E2h, and E1(TO) phonon modes of the wurtzite symmetry were identified by using light linearly polarized along different directions in backscattering configuration. Additionally, forbidden longitudinal optical modes have also been observed. Furthermore, by applying an extended 11-parameter rigid-ion model, the complete dispersion relations of InP in the wurtzite phase have been calculated, showing a good agreement with the Raman experimental data.