M. Mattingly

Band‐gap determination by photoreflectance of InGaAs and InAlAs lattice matched to InP

Photoreflectance‐derived band‐gap parameters as a function of temperature for InGaAs and InAlAs lattice matched to InP are reported. The experiment was performed on a set of samples of various compositions (and strains) yielding greater reliability and ensuring self‐consistency. For InGaAs, fits to the Varshni equation gave E0(T=0 K)=803 meV, α=4.0×10−4 eV K−1, and β=226 K. For InAlAs, E0(T=0 K)=1.541 eV, α=4.7×10−4 eV K−1, β=149 K, and Δ0=338 meV.

Photoluminescence from AlInAs/InP quantum wells grown by organometallic vapor phase epitaxy

Photoluminescence from AlInAs/InP quantum wells and single heterojunctions is reported for the first time. An emission centered around 1.1 eV which is most intense in multiquantum well structures, is shown to originate from confined‐particle transitions involving spatially separated electrons and holes in quantum wells in the InP and AlInAs, respectively. The AlInAs/InP heterostructure is shown to have a staggered band lineup with an effective band gap of 1.06 eV.

OMVPE growth of AlInAs and device quality AlInAs-based heterostructures

Abstract High-quality AlInAs exhibiting excellent photoluminescence and having residual electron concentrations as low as 7×10 15 cm −3 with electron mobilities as high as 1900 cm 2 /V·s has been grown by OMVPE. AlInAs/InP heterostructures are shown to be type II heterojunctions with electron mobilities as high as 4500 cm 2 /V·s at 300 K. This material was used for the fabrication of high-gain heterostructure MESFETs and heterostructure insulated-gate FETs (HIGFETs). AlInAs/InP MESFETs have DC transconductances as high as 220 mS/mm and microwave gains as high as 11.5 dB at 10 GHz with an max of 42 GHz. AlInAs/InP/GaInAs HIGFETs, however, show high transconductances up to 470 mS/mm at 300 K and 530 mS/mm at 77 K. These are some of the highest performance FETs fabricated on OMVPE-grown material.

Modulation‐doped AlInAs/InP heterostructures grown by organometallic vapor phase epitaxy

We have grown modulation‐doped AlInAs/InP heterostructures with two‐dimensional electron gases. Hall measurements and Shubnikov‐de Haas oscillations observed in these heterostructures yield electron mobilities as high as 26000, 9000, 2300 cm2/V s at 2, 77, and 300 K, with electron concentrations as high as 1.5×1012 cm−2. These results demonstrate the potential of the AlInAs/InP heterostructure for power microwave applications.

High mobility AlInAs/InP high electron mobility transistor structures grown by organometallic vapor phase epitaxy

We have grown single and double‐channel AlInAs/InP modulation doped heterostructures with electron mobilities as high as 5000 and 27 000 cm2/V s at 300 and 77 K, respectively. The sheet electron concentrations for these structures range from 1.5×1012 to 5×1012 cm−2. The layers exhibit strong Shubnikov de Haas oscillations, from which we determined two‐dimensional electron gas mobilities at 1.8 K of 40 000 cm2/V s. The electrical properties of the AlInAs/InP heterostructures are the best reported for any device structures with InP as the active layer material.

Responses of InP/Ga0.47In0.53As/InP heterojunction bipolar transistors to 1530 and 620 nm ultrafast optical pulses

An npn InP/Ga0.47In0.53As/InP heterojunction bipolar transistor with a unity‐gain frequency of 15 GHz was illuminated with ultrafast optical pulses at wavelengths of 620 and 1530 nm. The device responded to the pulses with an emitter current transient having a duration of 12 ps, corresponding to a bandwidth of ∼40 GHz. A slower photocurrent component, with a decay time of ∼100 ps, was a sensitive function of base bias and, because of the photocarrier dynamics and the grounded‐collector circuit configuration, could be nulled out.

Sims and photoluminescence evaluation of high purity InP grown by organometallic vapor phase epitaxy

This paper reports on the growth of high purity InP by organometallic vapor phase epitaxy at atmospheric pressure by the reaction of trimethylindium and phosphine. Electron mobilities as high as 104,000 cm/V·s and electron concentration as low as 4.8×1014 cm-3 were achieved at an optimum growth temperature of 650°C. This is a high enough temperature for the growth of high quality aluminum containing compounds for InP based heterojunction devices. Electrical measurements, SIMS analysis and photoluminescence measurements are used to show that the optimum growth temperature results from donors and acceptors whose incorporation vary oppositely with temperature.

Electron mobilities of AlInAs and AlInAs/InP heterostructures

Electron mobilities at 300 K as high as 4500 and 9800 cm2 /V s are observed when AlInAs is grown on in situ‐grown InP and GaInAs, respectively. These high anomalous mobilities, compared to those of material grown directly on InP substrates, are shown to be due to parallel conduction both in the AlInAs and in the two‐dimensional electron gas present at the AlInAs/InP and AlInAs/GaInAs interface. To our knowledge, this is the first report of a two‐dimensional electron gas for AlInAs/InP heterostructures. Theoretical estimation of the electron mobilities in AlInAs using realistic values of alloy scattering potentials have been used to show that the true mobilities of electrons in AlInAs are for material grown on InP substrates.

High‐purity InP grown on Si by organometallic vapor phase epitaxy

We have grown by organometallic vapor phase epitaxy high‐purity InP on Si substrates using a GaAs intermediate layer. The InP layers exhibit residual electron concentration as low as 5×1014 cm−3 and electron mobilities as high as 4000 and 25 000 cm2/V s at 300 and 77 K, respectively. The achieved InP quality is dependent on the GaAs intermediate layer thickness. These excellent electrical properties are due to high crystal qualities as evidenced by x‐ray rocking curve half width as low as 215 arcsec and defect densities on the order 108 cm−2. p/n junctions, with ideality factors as low as 1.6 and low leakage currents, confirm the device quality of this material.

MOVPE of AlInAs HEMT structures

Abstract The growth by MOVPE and device applications of AlInAs HEMT structures have been reported by several groups over the past few years. This paper reviews the technological achievements up to date, presents recent results on AlInAs HEMTs and discusses future requirements and approaches to the growth of AlInAs HEMT structures suitable for high frequency applications.