M. Modreanu

On the structure, morphology and electrical conductivities of titanium oxide thin films

Abstract Titanium oxide thin films were prepared by a d.c. sputtering technique onto glass substrates. The morphology of the films was analysed by atomic force microscopy and their structure by X-ray diffraction. The structure and phase composition of the films depend on the deposition conditions. The small values for roughness obtained from AFM, ranging from 3 to 9 nm, show relatively smooth surfaces. Temperature dependences of the electrical conductivities were studied in a wide range, 13–560 K. The values of activation energies of electrical conduction, calculated from the temperature dependences of the electrical conductivity, varied between 0.13 and 0.39 eV, for temperature range 310–468 K. The current–voltage characteristics are ohmic for values of applied voltage lower than 0.5 V. For higher values, the mechanism of electrical conduction is determined by space-charge-limited currents.

Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation

High dielectric constant hafnium oxide films were formed by electron beam (e-beam) evaporation on HF last terminated silicon (100) wafers. We report on the influence of low energy argon plasma ( ∼ 70 eV) and oxygen flow rate on the electrical, chemical, and structural properties of metal-insulator-silicon structures incorporating these e-beam deposited HfO2 films. The use of the film-densifying low energy argon plasma during the deposition results in an increase in the equivalent oxide thickness (EOT) values. We employ high resolution transmission electron microscopy (HRTEM), x-ray photoelectron spectroscopy (XPS), and medium energy ion scattering experiments to investigate and understand the mechanisms leading to the EOT increase. We demonstrate very good agreement between the interfacial silicon oxide thicknesses derived independently from XPS and HRTEM measurements. We find that the e-beam evaporation technique enabled us to control the SiOx interfacial layer thickness down to ∼ 6 A. Very low leakage current density (<10−4 A/cm2) is measured at flatband voltage +1 V into accumulation for an estimated EOT of 10.9±0.1 A. Based on a combined HRTEM and capacitance-voltage (CV) analysis, employing a quantum-mechanical CV fitting procedure, we determine the dielectric constant (k) of HfO2 films, and associated interfacial SiOx layers, formed under various processing conditions. The k values are found to be 21.2 for HfO2 and 6.3 for the thinnest ( ∼ 6 A) SiOx interfacial layer. The cross-wafer variations in the physical and electrical properties of the HfO2 films are presented.

Raman spectroscopic monitoring of the osteogenic differentiation of human mesenchymal stem cells

The differentiation of stem cells into multi-lineages is essential to aid the development of tissue engineered materials that replicate the functionality of their tissue of origin. For this study, Raman spectroscopy was used to monitor the formation of a bone-like apatite mineral during the differentiation of human mesenchymal stem cells (hMSCs) towards an osteogenic lineage. Raman spectroscopy observed dramatic changes in the region dominated by the stretching of phosphate groups (950-970 cm(-1)) during the period of 7-28 days. Changes were also seen at 1030 cm(-1) and 1070 cm(-1), which are associated with the P-O symmetric stretch of PO(4)(3-) and the C-O vibration in the plane stretch of CO(3)(2-). Multivariate factor analysis revealed the presence of various mineral species throughout the 28 day culture period. Bone mineral formation was observed first at day 14 and was identified as a crystalline, non-substituted apatite. During the later stages of culture, different mineral species were observed, namely an amorphous apatite and a carbonate, substituted apatite, all of which are known to be Raman markers for a bone-like material. Band area ratios revealed that both the carbonate-to-phosphate and mineral-to-matrix ratios increased with age. When taken together, these findings suggest that the osteogenic differentiation of hMSCs at early stages resembles endochondral ossification. Due to the various mineral species observed, namely a disordered amorphous apatite, a B-type carbonate-substituted apatite and a crystalline non-substituted hydroxyapatite, it is suggested that the bone-like mineral observed here can be compared to native bone. This work demonstrates the successful application of Raman spectroscopy combined with biological and multivariate analyses for monitoring the various mineral species, degree of mineralisation and the crystallinity of hMSCs as they differentiate into osteoblasts.

Characterization of Ge-on-Si virtual substrates and single junction GaAs solar cells

A virtual substrate consisting of a Ge layer grown directly on Si without an intervening SiGe graded layer is characterized. The nominally 100% Ge overlayer is fully relaxed and contains a small amount (3%) of unintentional Si. A dislocation density of 108 cm−2 is estimated for the virtual substrate prior to GaAs epitaxial growth, which is reduced by a factor of 100 after the growth of GaAs. On this novel virtual substrate 1 cm2 single-junction GaAs photovoltaic cells were realized with an efficiency of 11.7% under AM0 compared with 20.2% for cells grown on a crystalline Ge substrate. Due to the high dislocation density a 50-fold higher dark current is measured in the virtual substrate cells compared to the crystalline Ge cells, leading to a lower short circuit current and open-circuit voltage of the cells fabricated on the virtual substrates. The post-GaAs growth dislocation density is estimated as 1 × 107 cm−2 in the base region and 4 × 105 cm−2 in the emitter region based on modelling and measurements.

Properties of rf-sputtered indium–tin-oxynitride thin films

Indium–tin-oxide (ITO) and indium–tin-oxynitride (ITON) thin films have been fabricated by rf-sputtering in plasma containing Ar or a mixture of Ar and N2, respectively. The structural, electrical and optical properties of ITON films were examined and compared with those of ITO films. The microstructure of ITON films was found to be dependent on the nitrogen concentration in the plasma. Increasing the amount of nitrogen in the plasma increased the resistivity and reduced the carrier concentration and mobility of the films. The electrical properties of the ITON films improved after annealing. The absorption edge of the ITON films deposited in pure N2 plasma was shifted towards higher energies and showed reduced infrared reflectance compared to the respective properties of ITO films. The potential of indium–tin-oxynitride films for use as a transparent conductive material for optoelectronic devices is addressed.

Optical properties of LPCVD silicon oxynitride

Low pressure chemical vapour deposition (LPCVD) silicon oxynitride films of various compositions (from pure SiO2 to pure Si3N4) were deposited by changing the relative gas flow ratio. The effects of oxygen on the physical properties of the films were studied by spectroellipsometry (using Bruggeman approximation and Wemple Di Domenico model) and infrared spectroscopy. Refractive index measured by spectroellipsometry method is studied as a function of some deposition parameters: temperature of deposition, gases fluxes ratio. The high value of deposition temperature means low values in refractive index. More oxygen into films decreases the refractive index. The refractive index dispersion is studied by single-oscillator Wemple Di Domenico model. The optical band gap varies monotonically from 5 eV for silicon nitride, to 9eV for HTO LPCVD silicon dioxide and for the studied silicon oxynitride was found to be between 5 and 6 eV.

A tunable microwave slot antenna based on graphene

The paper presents the experimental and modeling results of a microwave slot antenna in a coplanar configuration based on graphene. The antennas are fabricated on a 4 in. high-resistivity Si wafer, with a ∼300 nm SiO2 layer grown through thermal oxidation. A CVD grown graphene layer is transferred on the SiO2. The paper shows that the reflection parameter of the antenna can be tuned by a DC voltage. 2D radiation patterns at various frequencies in the X band (8–12 GHz) are then presented using as antenna backside a microwave absorbent and a metalized surface. Although the radiation efficiency is lower than a metallic antenna, the graphene antenna is a wideband antenna while the metal antennas with the same geometry and working at the same frequencies are narrowband.

Investigation on preparation and physical properties of nanocrystalline Si/SiO2 superlattices for Si-based light-emitting devices

Abstract Structures containing silicon nanocrystals (nc-Si) are very promising for Si-based light-emitting devices. Using a technology compatible with that of silicon, a broader wavelength range of the emitted photoluminescence (PL) was obtained with nc-Si/SiO2 multilayer structures. The main characteristic of these structures is that both layers are light emitters. In this study we report results on a series of nc-Si/SiO2 multilayer periods deposited on 200 nm thermal oxide SiO2/Si substrate. Each period contains around 10 nm silicon thin films obtained by low-pressure chemical vapour deposition at T=625°C and 100 nm SiO 2 obtained by atmospheric pressure chemical vapour deposition T=400°C. Optical and microstructural properties of the multilayer structures have been studied by spectroscopic ellipsometry (using the Bruggemann effective medium approximation model for multilayer and multicomponent films), FTIR and UV–visible reflectance spectroscopy. IR spectroscopy revealed the presence of SiOx structural entities in each nc-Si/SiO2 interface. Investigation of the PL spectra (using continuous wave-CW 325 nm and pulsed 266 nm laser excitation) has shown several peaks at 1.7, 2, 2.3, 2.7, 3.2 and 3.7 eV , associated with the PL centres in SiO2, nc-Si and Si–SiO2 interface. Their contribution to the PL spectra depends on the number of layers in the stack.

Silicon membranes fabrication by wet anisotropic etching

Abstract The anisotropic etching of silicon became a key technology for sensor fabrication due to the strong dependence of the etch rate on crystal orientation which offers the possibility of 3D structuring. The paper presents the investigation of anisotropic etching of silicon in organic (ethylenediamine pyrocatechol (EDP)) and inorganic (KOH, KOH+complexant) solutions for sensor membrane fabrication. The protection of metallic layer during the anisotropic etching is considered. The solutions were analyzed and compared in point of view of etch rate and quality of silicon etched surface. The mask materials resistant at etching solutions are presented. The improvement of the anisotropic etching process is realized by using organic complexants added at KOH, which increases the etch rate and minimizes the hillocks formation. The EDP etching is analyzed for metallic layer protection and contamination avoidance. New materials obtained at low temperature deposition (

Electron scattering mechanisms in fluorine-doped SnO2 thin films

Polycrystalline fluorine-doped SnO2 (FTO) thin films have been grown by ultrasonic spray pyrolysis on glass substrate. By varying growth conditions, several FTO specimens have been deposited and the study of their structural, electrical, and optical properties has been carried out. By systematically investigating the mobility as a function of carrier density, grain size, and crystallite size, the contribution of each physical mechanism involved in the electron scattering has been derived. A thorough comparison of experimental data and calculations allows to disentangle these different mechanisms and to deduce their relative importance. In particular, the roles of extended structural defects such as grain or twin boundaries as revealed by electron microscopy or x-ray diffraction along with ionized impurities are discussed. As a consequence, based on the quantitative analysis presented here, an experimental methodology leading to the improvement of the electro-optical properties of FTO thin films is reported. FTO thin films assuming an electrical resistivity as low as 3.7 · 10−4 Ω cm (square sheet resistance of 8 Ω/◻) while retaining good transmittance up to 86% (including substrate effect) in the visible range have been obtained.