M. Mond

1.9-µm and 2.0-µm laser diode pumping of Cr 2+ :ZnSe and Cr 2+ :CdMnTe

Efficient diode pumping at wavelengths of 1.9 and 2.0microm of a Cr(2+): ZnSe laser with an output power of 105 mW and a slope efficiency of 35% with respect to the absorbed pump power is presented. In addition, Cr(2+): CdMnTe has been laser diode pumped as well as operated in the continuous-wave regime, to the best of our knowledge for the first time.

Optical characterization of Yb,Tm:KYW crystal concerning laser application

Abstract Absorption and emission spectra as well as 2F5/2(Yb3+) and 3H4,3F4(Tm3+) excited state relaxation of Yb:Tm-doped potassium yttrium tungstate (KY(WO4)2) crystal were measured. The intensities of the electronic transitions were analyzed from the point of view of further application of this crystal for diode pumped solid-state lasers. The processes of energy transfer between Yb and Tm ions under 980-nm excitation in this medium are discussed.

Passive Q-switching of a diode-pumped Tm:YAG laser by Cr/sup 2+/:ZnSe

We present a diode-end pumped Tm:YAG laser passive Q-switched by a Cr/sup 2+/:ZnSe crystal for the first time, to the best of our knowledge. A maximum output power of 1.6 W with pulse energies up to 0.4 mJ and pulse widths of 300 ns were obtained. Using this laser as a pump source for a Cr/sup 2+/:ZnSe laser an output power of 360 mW at 2.5 /spl mu/m was achieved.

Yb:NaGd(WO/sub 4/)/sub 2/ tunable solid-state laser operation with Ti:sapphire and diode laser pumping

Room temperature laser operation near 1030 nm of Yb³⁺ in the disordered crystal NaGd(WO₄)₂ with slope efficiencies exceeding 30%, output powers more than 300 mW, and tuning from 1016 to 1049 nm are demonstrated

Yb:NaGd(WO/sub 4/)/sub 2/: spectroscopic characterisation and laser demonstration

Here, Yb:NaGd(WO/sub 4/)/sub 2/ (Yb:NGW) is presented, which - in contrast to the potassium tungstates - can be grown by the Czochralski-technique and exhibits even larger Yb-Yb-distances. The effect of radiation trapping is largely excluded due to the used experimental technique, i.e. the so-called pinhole-method. Furthermore, Yb:NGW has been tested in first laser experiments. Under titanium sapphire laser pumping, a slope efficiency of 36% and a maximum output power of nearly 200 mW were achieved. Using a diode laser at a wavelength of 975 nm a slope efficiency of 20% and a maximum output power of 230 mW were obtained.

Site-selective spectroscopy of Yb/sup 3+/:LaSc/sub 3/(BO/sub 3/)/sub 4/

In recent years, ytterbium-doped materials have reached great interest for high power lasers, especially in the thin-disk laser setup. The main advantage of ytterbium compared to neodymium is the low quantum defect between pump and laser wavelength, the absence of upconversion processes (only cooperative luminescence) and the possibility of high doping concentration. Thus, ytterbium is the preferred ion for the thin disc laser around 1 /spl mu/m wavelength. Here, Yb/sup 3+/:LaSc/sub 3/(BO/sub 3/)/sub 4/ is investigated as gain medium for the thin disk-laser.

Diode-pumped laser operation of Yb,Tm:KY(WO/sub 4/)/sub 2/ around 1.97 /spl mu/m

Summary from only given. This paper presents to our knowledge for the first time the results on the investigation of laser operation of a new medium-Yb/sup 3+/,Tm/sup 3+/:KY(WO/sub 4/)/sub 2/ (Yb:Tm:KYW). In our previous studies it has been shown that this laser material possesses a strong absorption band with a maximum at 981 nm and strong and broad luminescence band in the wavelength range of 1.68 to 2.0 /spl mu/m.

Efficient 100 mW Cr/sup 2+/:ZnSe laser pumped by a 1.9 /spl mu/m laser diode

Summary from only given. Broadly tunable and efficient laser operation of Cr/sup 2+/:ZnSe have been reported for different pump sources. For many applications, e.g. medical use or trace gas analysis, an efficient compact diode pumped Cr/sup 2+/:ZnSe laser is of great demand. We present for the first time an efficient continuous-wave Cr/sup 2+/:ZnSe laser pumped by high power GaSb laser diodes, which operate at wavelengths of 1.9 /spl mu/m and 2.0 /spl mu/m.

Spectroscopic, Phototropic, and Lasing Properties of Cd1−xMn x Te Single Crystals Doped With Chromium Ions

The spectroscopic properties of Cr2+ ions in Cr:Cd1−xMnxTe (CMT) crystals are studied, and the possibility of using these impurity crystals as active media and saturable absorbers of solid‐state lasers of medium IR range is demonstrated. The bands of absorption with a maximum at 1.9 μm and of luminescence with a maximum at 2.6 μm correspond to the transitions between the levels 5T2 and 5E of the tetracoordinated Cr2+ ions with more than 1·10−18‐cm2 cross sections. The pulsed and continuous lasing modes of a Cr:CMT laser are realized in the 2.6‐μm region. The Cr:CMT crystals are characterized by effective saturation of impurity absorption. The cross sections of absorption from the ground and excited states of the Cr2+ ions at λ = 2.09 μm are determined: σgsa = 1.1·10−18 cm2; σesa/σgsa < 0.1. With the use of the Cr:CMT crystals as a passive gate the regime of Q‐switching of the Cr,Tm,Ho:YAG laser emitting at λ = 2.09 μm is obtained.

Excited state absorption and efficient laser generation of Cr/sup 2+/:ZnSe

Summary form only given. Cr/sup 2+/-doped chalcogenide crystals were shown recently to be promising materials for highly efficient and broadly tunable mid-IR (2-3 /spl mu/m) lasers. In this paper we report for the first time to our knowledge on the results of excited-state absorption (ESA) measurements in Cr/sup 2+/:ZnSe as well as on the realization of 1 W efficient cw laser with Cr/sup 2+/:ZnSe crystals.