M. Motapothula

Selective growth of single phase VO2(A, B, and M) polymorph thin films

We demonstrate the growth of high quality single phase films of VO2(A, B, and M) on SrTiO3 substrate by controlling the vanadium arrival rate (laser frequency) and oxidation of the V atoms. A phase diagram has been developed (oxygen pressure versus laser frequency) for various phases of VO2 and their electronic properties are investigated. VO2(A) phase is insulating VO2(B) phase is semi-metallic, and VO2(M) phase exhibits a metal-insulator transition, corroborated by photo-electron spectroscopic studies. The ability to control the growth of various polymorphs opens up the possibility for novel (hetero)structures promising new device functionalities.

Anomalous Current-Induced Spin Torques in Ferrimagnets near Compensation

While current-induced spin-orbit torques have been extensively studied in ferromagnets and antiferromagnets, ferrimagnets have been less studied. Here we report the presence of enhanced spin-orbit torques resulting from negative exchange interaction in ferrimagnets. The effective field and switching efficiency increase substantially as CoGd approaches its compensation point, giving rise to 9 times larger spin-orbit torques compared to that of a noncompensated one. The macrospin modeling results also support efficient spin-orbit torques in a ferrimagnet. Our results suggest that ferrimagnets near compensation can be a new route for spin-orbit torque applications due to their high thermal stability and easy current-induced switching assisted by negative exchange interaction.

Mechanisms of charge transfer and redistribution in LaAlO 3 /SrTiO 3 revealed by high-energy optical conductivity

In condensed matter physics the quasi two-dimensional electron gas at the interface of two different insulators, polar LaAlO3 on nonpolar SrTiO3 (LaAlO3/SrTiO3) is a spectacular and surprising observation. This phenomenon is LaAlO3 film thickness dependent and may be explained by the polarization catastrophe model, in which a charge transfer of 0.5e(-) from the LaAlO3 film into the LaAlO3/SrTiO3 interface is expected. Here we show that in conducting samples (≥ 4 unit cells of LaAlO3) there is indeed a ~0.5e(-) transfer from LaAlO3 into the LaAlO3/SrTiO3 interface by studying the optical conductivity in a broad energy range (0.5-35 eV). Surprisingly, in insulating samples (≤ 3 unit cells of LaAlO3) a redistribution of charges within the polar LaAlO3 sublayers (from AlO2 to LaO) as large as ~0.5e(-) is observed, with no charge transfer into the interface. Hence, our results reveal the different mechanisms for the polarization catastrophe compensation in insulating and conducting LaAlO3/SrTiO3 interfaces.

Cationic-vacancy-induced room-temperature ferromagnetism in transparent, conducting anatase Ti1-xTaxO2 (x~0.05) thin films.

We report room-temperature ferromagnetism (FM) in highly conducting, transparent anatase Ti1−xTaxO2 (x∼0.05) thin films grown by pulsed laser deposition on LaAlO3 substrates. Rutherford backscattering spectrometry (RBS), X-ray diffraction, proton-induced X-ray emission, X-ray absorption spectroscopy (XAS) and time-of-flight secondary-ion mass spectrometry indicated negligible magnetic contaminants in the films. The presence of FM with concomitant large carrier densities was determined by a combination of superconducting quantum interference device magnetometry, electrical transport measurements, soft X-ray magnetic circular dichroism (SXMCD), XAS and optical magnetic circular dichroism, and was supported by first-principles calculations. SXMCD and XAS measurements revealed a 90 per cent contribution to FM from the Ti ions, and a 10 per cent contribution from the O ions. RBS/channelling measurements show complete Ta substitution in the Ti sites, though carrier activation was only 50 per cent at 5 per cent Ta concentration, implying compensation by cationic defects. The role of the Ti vacancy (VTi) and Ti3+ was studied via XAS and X-ray photoemission spectroscopy, respectively. It was found that, in films with strong FM, the VTi signal was strong while the Ti3+ signal was absent. We propose (in the absence of any obvious exchange mechanisms) that the localized magnetic moments, VTi sites, are ferromagnetically ordered by itinerant carriers. Cationic-defect-induced magnetism is an alternative route to FM in wide-band-gap semiconducting oxides without any magnetic elements.

Multifunctional Ti1−xTaxO2: Ta doping or alloying?

Useful electronic, magnetic, and optical properties have been proposed and observed in thin films of Ti1−xMxO2 (M=Ta,Nb,V). In this work, we have studied phase formation for films of Ti1−xTaxO2 prepared by pulsed laser deposition. We show that substitutional Ta in TiO2 results in a different material system in terms of its electronic properties. Moss–Burstein shift is ruled out by comparing the electrical transport data of anatase and rutile TiO2. Vegard’s law fit to the blueshift data and the high energy optical reflectivity studies confirm the formation of an alloy with a distinct band structure.

Reversible room-temperature ferromagnetism in Nb-doped SrTiO3single crystals

The search for oxide-based room-temperature ferromagnetism has been one of the holy grails in condensed matter physics. Room-temperature ferromagnetism observed in Nb-doped SrTiO3 single crystals is reported in this Rapid Communication. The ferromagnetism can be eliminated by air annealing (making the samples predominantly diamagnetic) and can be recovered by subsequent vacuum annealing. The temperature dependence of magnetic moment resembles the temperature dependence of carrier density, indicating that the magnetism is closely related to the free carriers. Our results suggest that the ferromagnetism is induced by oxygen vacancies. In addition, hysteretic magnetoresistance was observed for magnetic field parallel to current, indicating that the magnetic moments are in the plane of the samples. The x-ray photoemission spectroscopy, the static time-of-flight and the dynamic secondary ion mass spectroscopy and proton induced x-ray emission measurements were performed to examine magnetic impurities, showing that the observed ferromagnetism is unlikely due to any magnetic contaminant.

Fabrication of large-area ultra-thin single crystal silicon membranes

Perfectly, crystalline, 55 nm thick silicon membranes have been fabricated over several square millimeters and used to observe transmission ion channeling patterns showing the early evolution of the axially channeled beam angular distribution for small tilts away from the [011] axis. The reduced multiple scattering through such thin layers allows fine angular structure produced by the highly non-equilibrium transverse momentum distribution of the channeled beam during its initial propagation in the crystal to be resolved. The membrane crystallinity and flatness were measured by using proton channeling measurements and the surface roughness of 0.4 nm using atomic force microscopy.

The Effect of Polar Fluctuation and Lattice Mismatch on Carrier Mobility at Oxide Interfaces

Since the discovery of two-dimensional electron gas (2DEG) at the oxide interface of LaAlO3/SrTiO3 (LAO/STO), improving carrier mobility has become an important issue for device applications. In this paper, by using an alternate polar perovskite insulator (La0.3Sr0.7) (Al0.65Ta0.35)O3 (LSAT) for reducing lattice mismatch from 3.0% to 1.0%, the low-temperature carrier mobility has been increased 30 fold to 35,000 cm(2) V(-1) s(-1). Moreover, two critical thicknesses for the LSAT/STO (001) interface are found, one at 5 unit cells for appearance of the 2DEG and the other at 12 unit cells for a peak in the carrier mobility. By contrast, the conducting (110) and (111) LSAT/STO interfaces only show a single critical thickness of 8 unit cells. This can be explained in terms of polar fluctuation arising from LSAT chemical composition. In addition to lattice mismatch and crystal symmetry at the interface, polar fluctuation arising from composition has been identified as an important variable to be tailored at the oxide interfaces to optimize the 2DEG transport.

Bandgap Control of the Oxygen-Vacancy-Induced Two-Dimensional Electron Gas in SrTiO3

We report very large bandgap enhancement in SrTiO3 (STO) films (fabricated by pulsed laser deposition below 800 {\deg}C), which can be up to 20% greater than the bulk value, depending on the deposition temperature. The origin is comprehensively investigated and finally attributed to Sr/Ti antisite point defects, supported by density functional theory calculations. More importantly, the bandgap enhancement can be utilized to tailor the electronic and magnetic phases of the two-dimensional electron gas (2DEG) in STO-based interface systems. For example, the oxygen-vacancy-induced 2DEG (2DEG-V) at the interface between amorphous LaAlO3 and STO films is more localized and the ferromagnetic order in the STO-film-based 2DEG-V can be clearly seen from low-temperature magnetotransport measurements. This opens an attractive path to tailor electronic, magnetic and optical properties of STO-based oxide interface systems under intensive focus in the oxide electronics community. Meanwhile, our study provides key insight into the origin of the fundamental issue that STO films are difficult to be doped into the fully metallic state by oxygen vacancies.

Reversible ferromagnetism in rutile TiO2 single crystals induced by nickel impurities

We report a Ni impurity induced reversible ferromagnetism and surface conduction in rutile TiO2 crystals subjected to specific thermal annealing. For annealing in vacuum at 800 °C, a growing ferromagnetic signal is seen with time while for a similar annealing in air, the magnetism vanishes. The magnetism is concomitant with a surface conductivity which at low temperatures shows tunneling characteristics. Here, we show that Ni magnetic impurity (in TiO2 crystals at <100 ppm) under vacuum annealing segregates to the surface over a 50 nm layer where the Ni concentration exceeds 10%–20% and drops with subsequent air annealing.