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Dive into the research topics where M. Nakamura is active.

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Featured researches published by M. Nakamura.


Surface Science | 1992

Effects of residual doping on the quantum confined Stark effect in p-i-n multiple quantum well structures

Tsutomu Tezuka; Atsushi Kurobe; Yasuo Ashizawa; H. Yoshida; M. Nakamura

Photocurrent spectra and time resolved photoluminescence for p-i-n diodes which have multiple quantum well structures in the i-region have been investigated. Anomalous features characterized by a pair of shoulders were observed in the photocurrent spectra. Suppression of sequential resonant tunneling was also deduced from a rate equation analysis of the photoluminescence decay time. These indicate that excitonic levels in the multiple quantum well structures are spread by a non-uniform electric field across the i-region caused by residual doping.


Archive | 1985

Integrated optical and electric circuit device

M. Nakamura


Electronics Letters | 1986

Submilliampere lasing of Zn-diffused mesa buried-hetero AlxGa1-xAs/GaAs multi-quantum-well lasers at 77 K

Atsushi Kurobe; Hideto Furuyama; Shigeya Naritsuka; Yoshihiro Kokubun; M. Nakamura


Electronics Letters | 1986

New double heterostructure optoelectronic triangular barrier switch (OETBS)

R.S. Mand; Y. Ashizawa; M. Nakamura


Electronics Letters | 1987

1 Gbit/s automatic-power-control-free zero-bias modulation of very-low threshold MQW laser diodes

M. Nakamura; Hideto Furuyama; Atsushi Kurobe


Electronics Letters | 1988

High-speed operation of 1.5 mu m GaInAsP/InP optoelectronic integrated laser drivers

N. Suzuki; Hideto Furuyama; Yuzo Hirayama; Motoyasu Morinaga; K. Eguchi; M. Kushibe; M. Funamizu; M. Nakamura


Electronics Letters | 1987

Determination of coupling coefficient of DFB lasers by a newly proposed method

Yuzo Hirayama; H. Okuda; Hideto Furuyama; Junichi Kinoshita; M. Nakamura


Electronics Letters | 1988

High-speed 1.5 mu m self-aligned constricted mesa lasers grown entirely by MOCVD

Yuzo Hirayama; Hideto Furuyama; Motoyasu Morinaga; N. Suzuki; M. Kushibe; K. Eguchi; M. Nakamura


Electronics Letters | 1987

Entirely VPE-grown 1-5μm DFB lasers with low threshold currents

T. Nishibe; M. Funamizu; H. Okuda; Hideto Furuyama; Yuzo Hirayama; M. Nakamura; M. Iwamoto


Electronics Letters | 1985

High-power and high-speed GaAlAs-GaAs LEDs fabricated by MOCVD growth

Koichi Nitta; Tadashi Komatsubara; H. Kinoshita; Y. Iizuka; M. Nakamura; T. Beppu

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