M. Nishioka
National Institute of Advanced Industrial Science and Technology
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Publication
Featured researches published by M. Nishioka.
Applied Physics Letters | 1994
J. Oshinowo; M. Nishioka; S. Ishida; Y. Arakawa
We report the direct deposition of strained InGaAs‐dot structures with a diameter of about 15 nm on GaAs surfaces by metalorganic chemical vapor deposition growth. High resolution scanning electron micrographs show highly uniform quantum‐sized dots formed by the Stranski–Krastanow growth mode. The sharp photoluminescence emission band of buried dot structures indicates efficient carrier capture and a homogeneous heterointerface. The average dot size and area dot density can be controlled accurately by growth temperature, and InGaAs deposition thickness, respectively.
Applied Physics Letters | 1995
M. Kitamura; M. Nishioka; J. Oshinowo; Y. Arakawa
Self‐alignment of InGaAs quantum dots was achieved by growing the quantum dots on the multiatomic steps in metalorganic chemical vapor deposition. In this technique, first GaAs epilayer with multiatomic step structures along straight lines was grown on a vicinal GaAs substrate under appropriate growth conditions. Then, the InGaAs quantum dots were grown selectively on the multiatomic step edges using strain effects. This growth technique results in spontaneously aligned InGaAs quantum dots without any preprocessing technique prior to the growth.
Applied Physics Letters | 1993
Shiro Tsukamoto; Y. Nagamune; M. Nishioka; Y. Arakawa
GaAs triangular‐shaped quantum wires with the lateral width of ∼10 nm are fabricated by metalorganic chemical vapor selective deposition growth technique. The lateral dimension is determined by both photoluminescence (PL) measurement and a high‐resolution scanning electron micrograph observation. A systematic change in the size of the quantum wire exhibits consistent blue shifts of the PL peak keeping high intensities, which demonstrates enhanced two‐dimensional quantum confinement with the material of high quality.
Applied Physics Letters | 2002
Quanxin Li; Katsuro Hayashi; M. Nishioka; Hodeo Kashiwagi; M. Hirano; Y. Torimoto; H. Hosono; Masayoshi Sadakata
Strong and high purity O− negative ion emission has been observed from a synthesized crystal 12CaO⋅7Al2O3 surface. A μA/cm2-level O− emission from this material has been achieved at the surface temperature of 800 °C and the extraction field over 1000 V/cm, which is about three orders of magnitude higher than the current density emitted from the Y2O3-stabilized ZrO2 electrolyte surface. The strong emissivity of this material, as well as easy and economical fabrication, may provide a useful tool to generate the O− negative ion, which is expected to be one of the most important radicals for chemical syntheses and material modifications.
Applied Physics Letters | 1993
Shiro Tsukamoto; Y. Nagamune; M. Nishioka; Yasuhiko Arakawa
We fabricated GaAs arrowhead‐shaped quantum wires utilizing both the selective growth technique and the difference in the stabilized crystal facet between GaAs and Al0.4Ga0.6As; the stabilized facet of the GaAs layer is (111)A and that of the Al0.4Ga0.6As layer is (311)A. A systematic change in the size of the quantum wire exhibits blue shifts of the photoluminescence peak, which is due to enhancement of the two‐dimensional quantum confinement effect.
Applied Physics Letters | 1994
Y. Nagamune; M. Nishioka; Shiro Tsukamoto; Y. Arakawa
We report on in situ fabrication and the photoluminescence spectra of pyramid‐shaped GaAs dot structures grown on (100) GaAs substrates using selective epitaxial growth by metalorganic chemical vapor deposition. The dot structures have lateral size of 25 nm and the period of 140 nm, showing a clear photoluminescence peak with strong intensity. In addition, energy change of magnetophotoluminescence spectra demonstrates the enhancement of exciton binding energy due to lateral confinement.
Applied Physics Letters | 1987
Y. Arakawa; T. Sogawa; M. Nishioka; Masaaki Tanaka; Hiroyuki Sakaki
A picosecond pulse (<1.8 ps) at 8570 A is successfully generated by a gain switching method in an optically pumped GaAs/AlGaAs multiquantum well laser with a cavity length of 155 μm. This is the narrowest pulse width so far achieved in semiconductor lasers without the external cavity. We believe that this short pulse generation results from the enhanced differential gain due to the two‐dimensional properties of the carriers in the quantum wells.
Applied Physics Letters | 1991
Touru Yamauchi; Y. Arakawa; M. Nishioka
We investigate enhanced and inhibited spontaneous emission effects in a vertical λ‐microcavity structure having two kinds of quantum wells (QWs) with the thicknesses of 76 and 114 A, measuring both photoluminescence intensity and carrier lifetime. The 76 and 114 A QWs are placed at the maximum and at the nodes of the emitted standing wave in the microcavity, respectively. When the λ‐microcavity mode is tuned to the quantized band‐gap energy of the 76 A QWs (enhanced condition), the PL intensity is enhanced compared with the case that the cavity mode is tuned to the quantized band‐gap energy of the 114 A QWs (inhibited condition). In addition, the increase of the carrier lifetime is also observed under the inhibited condition. These results demonstrate existence of enhanced and inhibited spontaneous emission effects in the microcavity structures.
Journal of Crystal Growth | 1993
Y. Nagamune; Shiro Tsukamoto; M. Nishioka; Y. Arakawa
Abstract Nanometer-scale GaAs dot-structures were fabricated by the selective epitaxial growth on SiO 2 -masked GaAs (100) substrates with low pressure metalorganic chemical vapor deposition. The growth process and the mechanism were investigated using the growth rate distribution and a surface potential model. It was revealed that the growth rates of the crystal planes change in dependence on the existence of other planes with faster growth rates, and that the in-plane migration is an important factor in the growth process. Based on these characteristics and the study on AlGaAs dot-structure growth, GaAs dot-structures three-dimensionally surrounded by Al 0.4 Ga 0.6 As were fabricated. The clear photoluminescence peak from the dots with high quantum efficiency shows the usefulness of the fabrication technique for quantum dots.
Applied Physics Letters | 2007
Denis Guimard; Y. Arakawa; Mitsuru Ishida; Shiro Tsukamoto; M. Nishioka; Y. Nakata; H. Sudo; T. Yamamoto; Mitsuru Sugawara
The authors report the fabrication of GaAs-based quantum dot (QD) lasers grown by metal organic chemical vapor deposition above 1.30μm. They fabricated a laser diode with five stacked InAs∕Sb:GaAs(100) QD layers, grown by antimony-surfactant-mediated growth. Ground state lasing was obtained at 1.34μm, with internal quantum efficiency of 62%, internal loss of 4.5cm−1 and ground state modal gain above 12cm−1. Lasing above 1.30μm could be achieved because of the beneficial effects of antimony on both the coherent InAs∕Sb:GaAs QD density and the suppression of the emission blueshift, usually observed for InAs∕GaAs QDs during postgrowth annealing at 600°C.
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Dive into the M. Nishioka's collaboration.
National Institute of Advanced Industrial Science and Technology
View shared research outputsNational Institute of Advanced Industrial Science and Technology
View shared research outputsNational Institute of Advanced Industrial Science and Technology
View shared research outputsNational Institute of Advanced Industrial Science and Technology
View shared research outputsNational Institute of Advanced Industrial Science and Technology
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