M. Ortolani

Observation of Dirac plasmons in a topological insulator

Plasmons are quantized collective oscillations of electrons and have been observed in metals and doped semiconductors. The plasmons of ordinary, massive electrons have been the basic ingredients of research in plasmonics and in optical metamaterials for a long time. However, plasmons of massless Dirac electrons have only recently been observed in graphene, a purely two-dimensional electron system. Their properties are promising for novel tunable plasmonic metamaterials in the terahertz and mid-infrared frequency range. Dirac fermions also occur in the two-dimensional electron gas that forms at the surface of topological insulators as a result of the strong spin-orbit interaction existing in the insulating bulk phase. One may therefore look for their collective excitations using infrared spectroscopy. Here we report the first experimental evidence of plasmonic excitations in a topological insulator (Bi2Se3). The material was prepared in thin micro-ribbon arrays of different widths W and periods 2W to select suitable values of the plasmon wavevector k. The linewidth of the plasmon was found to remain nearly constant at temperatures between 6 K and 300 K, as expected when exciting topological carriers. Moreover, by changing W and measuring the plasmon frequency in the terahertz range versus k we show, without using any fitting parameter, that the dispersion curve agrees quantitatively with that predicted for Dirac plasmons.

Performance of SISSI, the infrared beamline of the ELETTRA storage ring

The results of pilot experiments carried out at the new infrared beamline SISSI (Source for Imaging and Spectroscopic Studies in the Infrared) operated at the synchrotron laboratory ELETTRA in Trieste, Italy, are presented and compared with the results obtained with conventional IR sources. The main figures of merit of the infrared synchrotron radiation (IRSR) such as brightness, spectral quality, and stability are discussed. Using a pinhole scanned across the IRSR beam, the effective beam size, the intensity, and the lateral distribution for different wavelengths are determined. The results obtained on geological and biological samples are used to illustrate how the broadband nature and high brightness of the IRSR beam allow IR spectroscopy experiments on diffraction-limited sample areas in both the mid-IR and far-IR regions.

Midinfrared Plasmon-Enhanced Spectroscopy with Germanium Antennas on Silicon Substrates

Midinfrared plasmonic sensing allows the direct targeting of unique vibrational fingerprints of molecules. While gold has been used almost exclusively so far, recent research has focused on semiconductors with the potential to revolutionize plasmonic devices. We fabricate antennas out of heavily doped Ge films epitaxially grown on Si wafers and demonstrate up to 2 orders of magnitude signal enhancement for the molecules located in the antenna hot spots compared to those located on a bare silicon substrate. Our results set a new path toward integration of plasmonic sensors with the ubiquitous CMOS platform.

The SPARC linear accelerator based terahertz source

Ultra-short electron beams, produced through the velocity bunching compression technique, are used to drive the SPARC linear accelerator based source, which relies on the emission of coherent transition radiation in the terahertz range. This paper reports on the main features of this radiation, as terahertz source, with spectral coverage up to 5 THz and pulse duration down to 200 fs, with an energy per pulse of the order of several micro-joule, and as electron beam longitudinal diagnostics.

Low-energy electrodynamics of superconducting diamond.

Heavily boron-doped, diamond films can become superconducting with critical temperatures Tc well above 4 K. Here we first measure the reflectivity of such a film down to 5 cm(-1), by also using coherent synchrotron radiation. We thus determine the optical gap 2Delta, the field penetration depth lambda, the range of action of the Ferrell-Glover-Tinkham sum rule, and the electron-phonon spectral function alpha2F(omega). We conclude that diamond behaves as a dirty BCS superconductor.

Midinfrared surface plasmon sensor based on a substrateless metal mesh

A midinfrared mass sensor based on high quality factor surface plasmon modes was designed, fabricated, and tested by infrared spectroscopy for the detection of nanometric layers of dielectric materials. Substrate removal below a metal mesh with period of 2 μm results in the coupling between degenerate surface plasmon modes on the two surfaces, resulting in a quality factor up to 33 for the antisymmetric mode. The presented substrateless metal mesh integrates mass sensing capability together with midinfrared spectroscopy, and is therefore of potential interest for substance-selective environmental and biomedical sensing applications

Tunability of the dielectric function of heavily doped germanium thin films for mid-infrared plasmonics

Heavily-doped semiconductor films are very promising for application in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in this wavelength range. In this work we investigate heavily n-type doped germanium epilayers grown on different substrates, in-situ doped in the 10 to 10 cm range, by infrared spectroscopy, first principle calculations, pump-probe spectroscopy and dc transport measurements to determine the relation between plasma edge and carrier density and to quantify mid-infrared plasmon losses. We demonstrate that the unscreened plasma frequency can be tuned in the 400 4800 cm range and that the average electron scattering rate, dominated by scattering with optical phonons and charged impurities, increases almost linearly with frequency. We also found weak dependence of losses and tunability on the crystal defect density, on the inactivated dopant density and on the temperature down to 10 K. In films where the plasma was optically activated by pumping in the near-infrared, we found weak but significant dependence of relaxation times on the static doping level of the film. Our results suggest that plasmon decay times in the several-picosecond range can be obtained in ntype germanium thin films grown on silicon substrates hence allowing for underdamped mid-infrared plasma oscillations at room temperature.

Mapping the amide I absorption in single bacteria and mammalian cells with resonant infrared nanospectroscopy

Infrared (IR) nanospectroscopy performed in conjunction with atomic force microscopy (AFM) is a novel, label-free spectroscopic technique that meets the increasing request for nano-imaging tools with chemical specificity in the field of life sciences. In the novel resonant version of AFM-IR, a mid-IR wavelength-tunable quantum cascade laser illuminates the sample below an AFM tip working in contact mode, and the repetition rate of the mid-IR pulses matches the cantilever mechanical resonance frequency. The AFM-IR signal is the amplitude of the cantilever oscillations driven by the thermal expansion of the sample after absorption of mid-IR radiation. Using purposely nanofabricated polymer samples, here we demonstrate that the AFM-IR signal increases linearly with the sample thickness t for t > 50 nm, as expected from the thermal expansion model of the sample volume below the AFM tip. We then show the capability of the apparatus to derive information on the protein distribution in single cells through mapping of the AFM-IR signal related to the amide-I mid-IR absorption band at 1660 cm(-1). In Escherichia Coli bacteria we see how the topography changes, observed when the cell hosts a protein over-expression plasmid, are correlated with the amide I signal intensity. In human HeLa cells we obtain evidence that the protein distribution in the cytoplasm and in the nucleus is uneven, with a lateral resolution better than 100 nm.

Microspectroscopic detection of local conducting areas generated by electric-pulse-induced phase transition in VO2 films

Insulator-metal phase transitions were induced in VO2∕Al2O3 films by applying a voltage pulse to a micrometric junction. We investigated the mechanism involved both spatially and temporally using midinfrared microspectroscopy. At the phase transition, we found that multilevel current switching occurred, a behavior typical of numerous compounds showing electric-pulse-induced resistance switching. We were able to demonstrate that in the case of our VO2 film, the multilevel switching was directly related to the formation of local conducting paths, which originated from sample inhomogeneity.

Terahertz current oscillations in a gated two-dimensional electron gas with antenna integrated at the channel ends

We studied terahertz current oscillations induced by a frequency-tunable radiation source in a AlGaAs/InGaAs/AlGaAs heterostructure field effect transistor channel. A planar antenna was integrated on-chip, and a substrate lens was used for broadband coupling of free-space radiation at 0.18–0.72 THz to the channel ends. Through spectral analysis of the detection signal, we identified two different mixing mechanisms: one related to channel current oscillations and the other to modulation of the gate-to-channel potential. Depending on gate bias and radiation frequency, the two mechanisms either compete or cooperate, leading to responsivity up to 300 V/W and noise equivalent power of 1 nW/Hz0.5