M. P. Anantram

Two-dimensional quantum mechanical modeling of nanotransistors

Quantization in the inversion layer and phase coherent transport are anticipated to have significant impact on device performance in “ballistic” nanoscale transistors. While the role of some quantum effects have been analyzed qualitatively using simple one-dimensional ballistic models, two-dimensional (2D) quantum mechanical simulation is important for quantitative results. In this paper, we present a framework for 2D quantum mechanical simulation of a nanotransistor/metal oxide field effect transistor. This framework consists of the nonequilibrium Green’s function equations solved self-consistently with Poisson’s equation. Solution of this set of equations is computationally intensive. An efficient algorithm to calculate the quantum mechanical 2D electron density has been developed. The method presented is comprehensive in that treatment includes the three open boundary conditions, where the narrow channel region opens into physically broad source, drain and gate regions. Results are presented for (i) dr...

Band-gap change of carbon nanotubes: Effect of small uniaxial and torsional strain

We use a simple picture based on the

Modeling of Nanoscale Devices

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Role of scattering in nanotransistors

electron approximation to study the band-gap variation of carbon nanotubes with uniaxial and torsional strain. We find (i) that the magnitude of slope of band gap versus strain has an almost universal behavior that depends on the chiral angle, (ii) that the sign of slope depends on the value of

Electronic transport through carbon nanotubes: Effects of structural deformation and tube chirality

(n\ensuremath{-}m)\mathrm{mod}3,

A polysaccharide bioprotonic field-effect transistor.

and (iii) a novel change in sign of the slope of band gap versus uniaxial strain arising from a change in the value of the quantum number corresponding to the minimum band gap. Four orbital calculations are also presented to show that the

Nonequilibrium Green's Function Treatment of Phonon Scattering in Carbon-Nanotube Transistors

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A Self-Consistent Full 3-D Real-Space NEGF Simulator for Studying Nonperturbative Effects in Nano-MOSFETs

orbital results are valid.

Strain induced change of bandgap and effective mass in silicon nanowires

We aim to provide engineers with an introduction to the nonequilibrium Greens function (NEGF) approach, which is a powerful conceptual tool and a practical analysis method to treat nanoscale electronic devices with quantum mechanical and atomistic effects. We first review the basis for the traditional, semiclassical description of carriers that has served device engineers for more than 50 years. We then describe why this traditional approach loses validity at the nanoscale. Next, we describe semiclassical ballistic transport and the Landauer-Buttiker approach to phase-coherent quantum transport. Realistic devices include interactions that break quantum mechanical phase and also cause energy relaxation. As a result, transport in nanodevices is between diffusive and phase coherent. We introduce the NEGF approach, which can be used to model devices all the way from ballistic to diffusive limits. This is followed by a summary of equations that are used to model a large class of structures such as nanotransistors, carbon nanotubes, and nanowires. Applications of the NEGF method in the ballistic and scattering limits to silicon nanotransistors are discussed.

CONDUCTANCE OF CARBON NANOTUBES WITH DISORDER : A NUMERICAL STUDY

We model the influence of scattering along the channel and extension regions of dual gate nanotransistors. It is found that the reduction in drain current due to scattering in the right half of the channel is comparable to the reduction in drain current due to scattering in the left half of the channel, when the channel length is comparable to the scattering length. This is in contrast to a popular belief that scattering in the source end of a nanotransistor is significantly more detrimental to the drive current than scattering elsewhere. As the channel length becomes much larger than the scattering length, scattering in the drain-end is less detrimental to the drive current than scattering near the source-end of the channel. Finally, we show that for nanotransistors, the classical picture of modeling the extension regions as simple series resistances is not valid.