M. Popescu

Deposition of high quality TiN films by excimer laser ablation in reactive gas

A new laser method is proposed for the deposition of high purity, hard fcc TiN layers of unlimited thickness. The film thickness can be very finely controlled mainly through the intermediary of the number of applied laser pulses as the deposition rate is of only 0.02–0.05 nm/pulse. The ablation is promoted from a Ti target by high intensity multipulse excimer laser irradiation in a low pressure N2 ambient gas while the forming compound is collected on a Si single‐crystalline wafer. The best results have been obtained for an ambient pressure of p=10–30 mTorr and a distance between the target and support of d=10 mm. It is shown that the formation of a liquid phase within the irradiated zone, maintained even after the end of a laser pulse, is the most important requisite for TiN formation. TiN is then ablated as a stoichio‐ metric phase.

Direct carbide synthesis by multipulse excimer laser treatment of Ti samples in ambient CH4 gas at superatmospheric pressure

Successful carbidation of Ti in a layer forming on the surface of a Ti sample submitted to multipulse excimer (λ=308 nm) laser treatment in CH4 at a slightly superatmospheric pressure is reported. The layer is only surface contaminated with oxygen while its main part consists of fcc TiC. The layer apparently ends with a tail of carbides with low C content, extending deeper into the sample’s bulk. The characteristics of the synthesized layer are suggested to be related to the peculiarities of the chemical synthesis which are enhanced by gas propulsion into a melted layer under the recoil action of a plasma evolving in front of the sample. A cavitation mechanism inside the melted surface layer in order to account for plasma initiation is proposed. This mechanism also facilitates the strong substance propulsion into the sample’s bulk.

New results in pulsed laser deposition of poly-methyl-methacrylate thin films

Abstract Thin organic films based on poly-methyl-methacrylate (PMMA) polymer have been obtained by pulsed laser deposition (PLD) on silicon substrates. The films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and Raman spectroscopy (RS). We observed that the film composition and structure depend on the laser fluence and on the temperature of the substrate during deposition.

Carbon nitride films deposited by reactive laser ablation

Abstract Carbon nitride films were deposited at 20, 250 and 500°C on 〈111〉 Si substrates by XeCl laser ablation of graphite in low pressure (1–50 Pa) N2 atmosphere at fluences of 12 and 16 J/cm2. Different diagnostic techniques (SEM, TEM, RBS, XPS, XRD) were used to characterize the deposited films. Films resulted plane and well adhesive to their substrates. N/C atomic ratios up to 0.7 were inferred from RBS measurements in films deposited at 20°C and 16 J/cm2. Nitrogen concentration increases with increasing ambient pressure and laser fluence. The N 1s peak of the XPS spectra indicate two different bonding states of nitrogen atoms to C atoms, while the C 1s peak, apart from the two bonding states to nitrogen atoms, indicates one bonding state with regard to carbon atoms. XRD and TEM analyses point to an oriented microcrystalline structure of the films. Heating of the substrate results in a lower nitrogen concentration in respect of films deposited at 20°C in otherwise identical experimental conditions. Optical emission studies of the laser plasma plume indicate a correlation between the emission intensity of the CN radicals in the plume and the nitrogen atom concentration in the films.

Photoexpansion and nano-lenslet formation in amorphous As2S3 thin films by 800 nm femtosecond laser irradiation

Two step laser processing has been used for the formation of nano-lenslets transmitting in red/infrared region of the optical spectrum on the surface of arsenic sulphide glass films. In the first step the films were obtained by pulsed laser deposition (248 nm), while in the second step the lenslets were created by low power femtosecond (800 nm) laser irradiation. Photoexpansion of the material along with simultaneous migration of chalcogen atoms in the irradiated area was the main phenomena involved in the generation of these structures. The maximum photoexpansion observed was 5.1%. At higher laser power, material ablation was evidenced.