M. Popinciuc

Electronic spin transport in graphene field-effect transistors

Spin transport experiments in graphene, a single layer of carbon atoms ordered in a honeycomb lattice, indicate spin-relaxation times that are significantly shorter than the theoretical predictions. We investigate experimentally whether these short spin-relaxation times are due to extrinsic factors, such as spin relaxation caused by low impedance contacts, enhanced spin-flip processes at the device edges, or the presence of an aluminum oxide layer on top of graphene in some samples. Lateral spin valve devices using a field-effect transistor geometry allowed for the investigation of the spin relaxation as a function of the charge density, going continuously from metallic hole to electron conduction (charge densities of n similar to 10(12) cm(-2)) via the Dirac charge neutrality point (n similar to 0). The results are quantitatively described by a one-dimensional spin-diffusion model where the spin relaxation via the contacts is taken into account. Spin valve experiments for various injector-detector separations and spin precession experiments reveal that the longitudinal (T-1) and the transversal (T-2) relaxation times are similar. The anisotropy of the spin-relaxation times tau and tau(perpendicular to), when the spins are injected parallel or perpendicular to the graphene plane, indicates that the effective spin-orbit fields do not lie exclusively in the two-dimensional graphene plane. Furthermore, the proportionality between the spin-relaxation time and the momentum-relaxation time indicates that the spin-relaxation mechanism is of the Elliott-Yafet type. For carrier mobilities of 2x10(3)-5x10(3) cm(2)/V s and for graphene flakes of 0.1-2 mu m in width, we found spin-relaxation times on the order of 50-200 ps, times which appear not to be determined by the extrinsic factors mentioned above.

Electronic spin drift in graphene field-effect transistors

We studied the drift of electron spins under an applied dc electric field in single layer graphene spin valves in a field-effect transport geometry at room temperature. In the metallic conduction regime (n approximately 3.5 x 10(16) m(-2)), for dc fields of about +/- 70 kV/m applied between the spin injector and spin detector, the spin valve signals are increased or decreased, depending on the direction of the dc field and the carrier type, by as much as +/- 50%. Sign reversal of the drift effect is observed when switching from hole to electron conduction. In the vicinity of the Dirac neutrality point the drift effect is strongly suppressed. The experiments are in quantitative agreement with a drift-diffusion model of spin transport.

Anisotropic Spin Relaxation in Graphene

Spin relaxation in graphene is investigated in electrical graphene spin valve devices in the nonlocal geometry. Ferromagnetic electrodes with in-plane magnetizations inject spins parallel to the graphene layer. They are subject to Hanle spin precession under a magnetic field B applied perpendicular to the graphene layer. Fields above 1.5 T force the magnetization direction of the ferromagnetic contacts to align to the field, allowing injection of spins perpendicular to the graphene plane. A comparison of the spin signals at B=0 and B=2 T shows a 20% decrease in spin relaxation time for spins perpendicular to the graphene layer compared to spins parallel to the layer. We analyze the results in terms of the different strengths of the spin-orbit effective fields in the in-plane and out-of-plane directions and discuss the role of the Elliott-Yafet and Dyakonov-Perel mechanisms for spin relaxation.

Linear scaling between momentum- and spin scattering in graphene

Spin transport in graphene carries the potential of a long spin-diffusion length at room temperature. However, extrinsic relaxation processes limit the current experimental values to 1-2 mu m. We present Hanle spin precession measurements in gated lateral spin valve devices in the low to high (up to 10(13) cm(-2)) carrier density range of graphene. A linear scaling between the spin-diffusion length and the diffusion coefficient is observed. We measure nearly identical spin- and charge diffusion coefficients indicating that electron-electron interactions are relatively weak and transport is limited by impurity potential scattering. When extrapolated to the maximum carrier mobilities of 2x10(5) cm(2)/Vs, our results predict that a considerable increase in the spin-diffusion length should be possible.

Controlling the efficiency of spin injection into graphene by carrier drift

Electrical spin injection from ferromagnetic metals into graphene is hindered by the impedance mismatch between the two materials. This problem can be reduced by the introduction of a thin tunnel barrier at the interface. We present room-temperature nonlocal spin valve measurements in cobalt/aluminum-oxide/graphene structures with an injection efficiency as high as 18%, where electrical contact is achieved through relatively transparent regions in the oxide. This value is further enhanced to 31% by applying a dc current bias on the injector electrodes, which causes carrier drift away from the contact. A reverse bias reduces the ac spin valve signal to zero or negative values. We introduce a model that quantitatively predicts the behavior of the spin accumulation in the graphene under such circumstances, showing a good agreement with our measurements.

Energy level alignment symmetry at Co/pentacene/Co interfaces

We have employed x-ray and ultraviolet photoemission spectroscopies (XPS and UPS) to study the energy level alignment and electronic structure at the Co/pentacene/Co interfaces. In the case of pentacene deposition on Co we found an interfacial dipole of about 1.05 eV and a hole injection barrier of 0.96 eV , whereas for the case of Co deposition on pentacene we found a similar value for the hole injection barrier and vacuum level alignment ( ∼ 0 eV interfacial dipole), respectively. By combining XPS and UPS we were able to identify that chemical reaction occurs between pentacene and Co. The results of the deposition of the reactive Co on pentacene indicates only a small penetration depth of the metal atoms into the pentacene layer. A complete band diagram for the layered Co/pentacene/Co structure is presented in the frame of a model with interfacial dipoles. Finally, our findings are linked to spin injection experiments.

Charge-ordering signatures in the optical properties of beta-Na0.33V2O5

Temperature dependent optical spectra are reported for beta-Na0.33V2O5. The sodium ordering transition at T(Na)=240 K and, in particular, the charge ordering transition at T(MI)=136 K strongly influence the optical spectra. The metal-insulator transition at T(MI) leads to the opening of a pseudogap ( variant Plancks over 2pi omega=1700 cm(-1)) and to the appearance of a large number of optical phonons. These observations and the presence of a midinfrared band (typical for low dimensional metals) strongly suggest that the charge carriers in beta-Na0.33V2O5 are small polarons.

Energy level alignment at Co/AlOx/pentacene interfaces

X-ray and ultraviolet photoemission spectroscopy (XPS and UPS) experiments were performed in order to study the energy level alignment and electronic structure at Co/AlOx/pentacene interfaces as a function of the aluminum oxide (AlOx) tunnel barrier thickness and the oxidation state of Co. XPS was used to determine the oxygen exposure for the optimum oxidation of 6, 8, and 10 A thin layers of Al deposited on Co. The Fermi level (FL) position in the band gap of AlOx depends on the oxidation state of the underlying Co and on the thickness of the tunnel barrier. The energy level alignment at Co/AlOx interfaces is consistent with an interfacial dipole, its magnitude being sensitive to the oxidation of Co, and band bending phenomena in the thin AlOx tunnel barrier. UPS experiments revealed no chemical interaction at Co/AlOx/pentacene interface in contrast with hybridization effects found at Co/pentacene interface. The vacuum level of pentacene aligns with that of AlOx, following the position of AlOx energy lev...

Charge and Sodium Ordering in β-Na0.33V2O3

Polarized Raman and optical spectra for the quasi one-dimensional metallic vanadate β-Na0.33V2O3 are reported for various temperatures. The spectra are discussed in the light of the sodium and charge ordering transitions occurring in this material, and demonstrate the presence of strong electron–phonon coupling.