M. Ranjbar

Gasochromic tungsten oxide thin films for optical hydrogen sensors

Tungsten oxide thin films on glass substrates were fabricated by pulsed laser deposition under different experimental conditions for gasochromic applications. Palladium clusters were overlaid on the film surface by the electroless plating method. Hydrogen gasochromic investigation revealed that desirable samples are amorphous deposited films in oxygen partial pressure. The maximum colouration velocity of deposited films at 13.3 Pa oxygen partial pressure and 25 °C, 150 °C and 300 °C substrate temperatures are 0.010 s−1, 0.027 s−1 and 0.030 s−1, respectively, while at 300 °C substrate temperature by increasing the oxygen partial pressure to 66.7 Pa the maximum colouration velocity enhances to 0.117 s−1. Deposition at the higher pressure results in a more porous surface which provides not only a larger gas–surface interaction area, but also extra positions for palladium reduction from solution.

Oxygen Vacancy in WO 3 Film-based FET with Ionic Liquid Gating

Ionic liquid gating is a versatile method for inducing a metal-insulator transition in field-effect transistor device structures. The mechanism of carrier doping in metal oxide films is under debate. Ionic liquid gating of a WO3 film-based field effect transistor is discussed in this report. Flat and relatively smooth WO3 films were deposited on SrTiO3 substrates by pulsed laser deposition. Swept and constant gate voltage characteristics are measured in both argon and oxygen atmospheres. The results show a clear dependence on the oxygen pressure of the experimental chamber. Metallic behavior in the films is attributed to oxygen vacancy formation in the WO3 layer induced by the high electric field at the oxide-ionic liquid interface. The density of states of a monoclinic supercell of oxygen deficient WO3 was studied by density functional theory (DFT). Calculated W and O partial densities of states verify metallic behavior even at dilute oxygen vacancy concentrations and show the role of W and O orbitals in the conductivity.