M. Rigana Begam

Structural and Magnetic Properties of Ni Doped

Nickel (Ni) doped SnO2 powder samples were prepared using solid-state reaction with dopant concentrations in the range of 3 at.% to 15 at.%. The influence of Ni doping on structural, optical, and magnetic properties of the powder samples has been investigated. All the Ni doped powder samples exhibited tetragonal structure of SnO2. A decrease in optical band gap was observed with increase of Ni doping levels. The vibrating sample magnetometer measurements revealed that the Ni doped SnO2 powder samples were ferromagnetic at room temperature.

Structural, Optical, and Magnetic Properties of Co Doped CdTe Alloy Powders Prepared by Solid-State Reaction Method

Co doped CdTe powder samples were prepared by solid-state reaction method. In the present work effect of Co doping on structural, optical, and magnetic properties has been studied. X-ray diffraction studies confirm zinc blend structure for all the samples. The lattice parameter showed linear increase with the increase in Co content. The elemental constituents were characterized by EDAX. Optical studies showed the increase in band gap with increase in Co level. The samples were diluted magnetic semiconductors and exhibited clear hysteresis loop showing room temperature ferromagnetism as confirmed by vibrating sample magnetometer.

Structural, optical and magnetic properties of Cu doped CdSe powders prepared by solid state reaction method

Cu doped CdSe powders were synthesized by solid state reaction method and studied the effect of Cu doping concentration on structural, optical and magnetic properties of the prepared samples. From XRD study it was found that the lattice constant increased with increase of Cu doping concentration. A clear blue shift was observed in the samples from optical studies. From the magnetic measurements, it was found that the samples were room temperature ferromagnetic in nature and strength of magnetic moment increased with increase of doping concentration. These synthesized powders are dilute magnetic semiconductors and are very promising candidates for ‘Spintronic’ device applications.

Room temperature ferromagnetism in undoped and Ni doped In2O3 thin films

Undoped and Ni (5 at.%) doped In2O3 thin films were deposited on glass substrate using electron beam evaporation technique and Ni doped In2O3 thin films were annealed at 450 oC. A systematic study was carried out on the structural, chemical and magnetic properties of the as deposited and annealed thin films. X-ray diffraction analysis revealed that all the films were cubic in structure and exhibied ferromagnetism at room temperature. The undoped In2O3 thin films exhibited a saturation magnetization of 24.01 emu/cm3. Ni doped In2O3 thin films annealed at 450 oC showed a saturation magnetization of 53.81 emu/cm3.

Structure and magnetic properties of Fe doped In2O3 thin films prepared by electron beam evaporation

Pure and Fe (7 at.%) doped In2O3 thin films were grown onto the glass substrates by electron beam evaporation technique. The structural and magnetic properties of the pure and Fe doped In2O3 thin films have been studied. The undoped and Fe doped In2O3 thin films shown ferromagnetic property at room temperature. A magnetization of 24 emu/cm3 was observed for pure In2O3 thin films. The magnetization of 38.23 emu/cm3 was observed for the Fe (7 at.%) doped In2O3 thin films.

Structural and magnetic properties of pure and Cu doped In2O3 thin films

Pure and Cu (7 at.%) doped In2O3 thin films were prepared using an electron beam evaporation technique. A systematic study was carried out on the structural, chemical and magnetic properties of the thin films. X-ray diffraction analysis revealed that all the films were cubic in structure. The pure and Cu doped In2O3 thin films showed ferromagnetism at room temperature. The Cu doped In2O3 thin films showed the saturation magnetization, coercivity and retentivity of 38.71 emu/cm3, 245 G and 5.54 emu/cm3, respectively.

Structural and optical properties of Sn1−xFexO2 thin films prepared by flash evaporation technique

Sn1−xFeXO2 (x = 0, 0.05) thin films were prepared on glass substrate using the flash evaporation technique. The samples were annealed at 773 K for 2 hrs in air atmosphere. A systematic study was carried out on the structural and optical properties of the as deposited and annealed thin films. From the X-ray diffraction analysis it was found that the Sn1−xFeXO2 films deposited at 623 K were amorphous in nature and the Sn1−xFeXO2 films annealed at 773 K exhibited the tetragonal structure of the SnO2. The optical band gap of the SnO2 thin films was found to be as 3.17 eV whereas the optical band gap of the Sn1−xFeXO2 films was found to be as 3.01 eV after air annealing.