M. S. Zholudev

Observation of three-dimensional massless Kane fermions in a zinc-blende crystal

Graphene and topological-insulator surfaces are well known for their two-dimensional conic electronic dispersion relation. Now three-dimensional hyperconic dispersion is shown for electrons in a HgCdTe crystal—once again bridging solid-state physics and quantum electrodynamics.M. Orlita, 2, ∗ D. M. Basko, M. S. Zholudev, 5 F. Teppe, W. Knap, V. I. Gavrilenko, N. N. Mikhailov, S. A. Dvoretskii, P. Neugebauer, C. Faugeras, A.-L. Barra, G. Martinez, and M. Potemski Laboratoire National des Champs Magnétiques Intenses, CNRS-UJF-UPS-INSA, Grenoble, France Charles University, Faculty of Mathematics and Physics, Ke Karlovu 5, 121 16 Praha 2, Czech Republic Université Grenoble 1/CNRS, LPMMC UMR 5493, B.P. 166, 38042 Grenoble, France Laboratoire Charles Coulomb (L2C), UMR CNRS 5221, GIS-TERALAB, Université Montpellier II, 34095 Montpellier, France Institute for Physics of Microstructures, RAS, Nizhny Novgorod, Russia A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russia Institut für Physikalische Chemie, Universität Stuttgart, Pfaffenwaldring 55, 70569 Stuttgart, Germany

Cyclotron resonance and interband optical transitions in HgTe/CdTe(0 1 3) quantum well heterostructures

Cyclotron resonance spectra of 2D electrons in HgTe/CdxHg1−xTe (0 1 3) quantum well (QW) heterostructures with inverted band structure have been thoroughly studied in quasiclassical magnetic fields versus the electron concentration varied using the persistent photoconductivity effect. The cyclotron mass is shown to increase with QW width in contrast to QWs with normal band structure. The measured values of cyclotron mass are shown to be systematically less than those calculated using the 8 × 8 Kane model with conventional set of HgTe and CdTe material parameters. In quantizing pulsed magnetic fields (Landau level filling factor less than unity) up to 45 T, both intraband (CR) and interband magnetoabsorption have been studied at radiation wavelengths 14.8 and 11.4 µm for the first time. The results obtained are compared with the allowed transition energies between Landau levels in the valence and conduction bands calculated within the same model, the calculated energies being again systematically less (by 3–14%) than the observed optical transition energies.

Spectra and kinetics of THz photoconductivity in narrow-gap Hg1?xCdxTe (x < 0.2) epitaxial films

Investigation into far infrared photoconductivity (PC) in narrow-gap epitaxial bulk Hg1–xCdxTe (x < 0.2) films grown by molecular beam epitaxy and chemical vapor deposition techniques is presented. A broadband of photosensitivity in terahertz region is found at 4.2 and 77 K. Some long-wavelength peculiarities of spectra are discovered and their origins are discussed. We also study PC relaxation process with nanosecond time resolution. It is found that carrier relaxation is non-radiative and measured lifetimes show that some of the structures are applicable for detecting in very long-wavelength infrared range.

Terahertz spectroscopy of quantum-well narrow-bandgap HgTe/CdTe-based heterostructures

The energy spectra of quantum-well narrow-bandgap Hg1 − yCdyTe/CdxHg1 − xTe heterostructures have been studied. The dependences of the effective cyclotron mass on the density (in classical magnetic fields) and the transition energy (in quantizing fields) have been obtained from the cyclotron resonance measurements. These dependences confirm the near-linear dispersion law for the electrons with small mass at the band bottom (the minimum cyclotron mass measured is 0.003 m0). The interband photoconductivity of the CdHgTe-based structures with the long-wavelength photoresponse edge lower than 6 meV has been demonstrated.

Specific features of the spectra and relaxation kinetics of long-wavelength photoconductivity in narrow-gap HgCdTe epitaxial films and heterostructures with quantum wells

The spectra and relaxation kinetics of interband photoconductivity are investigated in narrow-gap Hg1 − xCdxTe epitaxial films with x = 0.19–0.23 and in structures with HgCdTe-based quantum wells (QWs), having an interband-transition energy in the range of 30–90 meV, grown by molecular-beam epitaxy on GaAs (013) substrates. A long-wavelength sensitivity band caused by impurities or defects is found in the spectra of the structures with quantum wells in addition to the interband photoconductivity. It is shown that the lifetimes of nonequilibrium carriers in the structures with QWs is less than in bulk samples at the same optical-transition energy. From the measured carrier lifetimes, the ampere-watt responsivity and the equivalent noise power for a film with x = 0.19 at a wavelength of 19 μm are estimated. When investigating the relaxation kinetics of the photoconductivity at 4.2 K in high excitation regime, it is revealed that radiative recombination is dominant over other mechanisms of nonequilibrium-carrier recombination.

Nonlocal resistance and its fluctuations in microstructures of band-inverted HgTe/(Hg,Cd)Te quantum wells

We investigate experimentally transport in gated microsctructures containing a band-inverted HgTe/Hg0:3Cd0:7Te quantum well. Measurements of nonlocal resistances using many contacts prove that in the depletion regime the current is carried by the edge channels, as expected for a twodimensional topological insulator. However, high and non-quantized values of channel resistances show that the topological protection length (i.e. the distance on which the carriers in helical edge channels propagate without backscattering) is much shorter than the channel length, which is 100 m. The weak temperature dependence of the resistance and the presence of temperature dependent reproducible quasi-periodic resistance uctuations can be qualitatively explained by the presence of charge puddles in the well, to which the electrons from the edge channels are tunnel-coupled.

Anticrossing of Landau levels in HgTe/CdHgTe (013) quantum wells with an inverted band structure

The simultaneous splitting of lines of an interband transition and cyclotron resonance in the conduction band has been detected in the absorption spectra of HgTe/CdHgTe quantum wells with an inverted band structure in quantizing magnetic fields. It has been shown that it is due to the absence of an inversion center in the crystal, which results in the interaction between the lower Landau level of the conduction band and the upper Landau level of the valence band.

Temperature-dependent magnetospectroscopy of HgTe quantum wells

We report on magnetospectroscopy of HgTe quantum wells in magnetic fields up to 45 T in temperature range from 4.2 K up to 185 K. We observe intra- and inter-band transitions from zero-mode Landau levels, which split from the bottom conduction and upper valence subbands, and merge under the applied magnetic field. To describe experimental results, realistic temperature-dependent calculations of Landau levels have been performed. We show that although our samples are topological insulators at low temperatures only, the signature of such phase persists in optical transitions at high temperatures and high magnetic fields. Our results demonstrate that temperature-dependent magnetospectroscopy is a powerful tool to discriminate trivial and topological insulator phases in HgTe quantum wells.

Cyclotron resonance in HgTe/CdTe(013) narrowband heterostructures in quantized magnetic fields

Electron cyclotron resonance in HgTe/CdTe(013)-based narrowband heterostructures with a noninverted band structure in quantized magnetic fields has been investigated at different electron concentrations. Cyclotron transitions from the lower Landau levels of the conduction band have been discovered. The Landau levels have been calculated in the Kane model with the inclusion of strain. Comparison with the experimental data indicates that the energies of the observed cyclotron resonances are systematically higher than the calculated ones.

Magnetoabsorption in narrow-gap HgCdTe epitaxial layers in the terahertz range

The magnetoabsorption and photoconductivity spectra are investigated in the terahertz (THz) range at a temperature of T = 4.2 K for n-Hg1 − xCdxTe bulk epitaxial layers of various compositions (both semiconductor and semimetallic) grown by molecular-beam epitaxy. Within the framework of the Kane 8 · 8 model, the electron and hole Landau levels are calculated. It is shown that, in contrast to the results of previous investigations, all observed resonance lines are related to transitions between the Landau levels of free carriers (the cyclotron resonance in the conduction band and the transitions between heavy-hole and electron Landau levels), which is evidence of the high purity and structural perfection of the samples. The possibility of using zero-gap Hg1 − xCdxTe solid solutions as THz photodetectors tunable by magnetic field is shown.