M. Serginov

Photopleochroism of GaPxAs1-x Surface-Barrier Structures

The proposed work reported here constitutes the first investigation of the polarimetric effects in III-V surface-barrier structures of metal-semiconductor (Au-n-GaPxAS1-x, Au-n-GaP) type, illuminated with linearly polarized radiation (LPR) at oblique incidence on the entrance plane (Au). As the angle θ increases the coefficient of photopleochroism increases as P~θ2. The maximum azimutal photosensitivity of the Au-n-GaPxAs1-x (x=0.45–1.0) structures is \varPhiI=0.15–0.20 A/W deg at θ=80° (300 K).

Electrical properties of In2Se3 single crystals and photosensitivity of Al/In2Se3 Schottky barriers

In2Se3 single crystals ∼40 mm long and 14 mm in diameter were grown by the Bridgman method. The composition of grown single crystals and their crystal structure were determined. The conductivity (σ) and Hall constant (R) of grown single crystals were measured and the first Schottky barriers Al/n-In2Se3 were fabricated. Rectification and photovoltaic effect were detected in the new structures. Based on the study of the photosensitivity spectra of Al/n-In2Se3 structures, the nature of the interband transitions and band gap of In2Se3 crystals were determined. It was concluded that the new structures can be applied to develop broadband photoconverters of optical radiation.

Photoelectric Properties of p-GaSe/n-CdGa2S4 Heterostructures

Single crystals of the ternary compound CdGa2S4 have been grown from the melt by the Bridgman–Stockbarger method and their composition, structure, and electrophysical properties have been determined. From the crystals obtained, p-GaSe/n-CdGa2S4 heterostructures have been generated for the first time and their photoelectric properties in natural and linearly polarized light have been investigated. We determine the main parameters of the heterostructures and show that they can be used in photoprocessors of optical radiation.

Investigation of the recombination radiation from layers of n-CdSiAs2

Complex investigations of the recombination radiation from monocrystals of p-CdSiAs2, thermally processed together with pure indium, which is accompanied by a conversion to p → n conductivity at a given depth, are reported. The effect of the thermal processing on the spectral shape and position of the maxima in the formed energy bands was determined. It was found that an increase in the time and temperature of the thermal processing is associated with a band shift in the direction of longer wavelength portion of the spectrum. The nature of the dominant radiative transitions is discussed.

Behavior of indium in CdSiAs2 crystals

The effect of indium and gallium (In, Ga) impurities on electrical and luminescence properties of p-CdSiAs2 crystals is studied. The energy spectrum, formed when the centers are doped, and their contribution to the spectral composition of the recombination radiation is discussed.

Photoelectric properties of In2O3-CdSiAs2 structures

Photosensitive rectifying heterostructures were prepared based on single crystals of p-CdSiAs2 doped with group-III impurities by depositing In2O3 layers. It was established that the slope of the long-wave edge of the photosensitivity of the obtained structures decreases as the CdSiAs2 hole concentration increases. Based on polarization investigations of the photocurrent, a conclusion is drawn concerning the possibilities for practical application of diode structures in polarization photoelectronics.