M. V. Yakunin

Magnetotransport in two-dimensional n-InGaAs∕GaAs double-quantum-well structures near the transition from the insulator to the quantum Hall effect regime

The temperature and magnetic-field dependence of the components of the conductivity and resistivity tensors are calculated with the quantum corrections due to the weak localization effect and electron-electron interaction taken into account in the diffusion and ballistic regimes. The corrections to the conductivity from the weak localization and electron-electron interaction and also the influence of spin and oscillation effects are taken into account by a renormalization of the transport relaxation time of the electron momentum, with the result that the Drude conductivity becomes temperature dependent. A calculation of the components of the conductivity and resistivity tensors is carried out with the use of the theoretical values of the parameters of the theory of quantum corrections, which are determined solely by the values of the carrier density and mobility of a particular sample. The results of the calculation are compared with experimental results for two-dimensional n-InGaAs∕GaAs structures with d...

Spin effects in magnetoresistance induced in an n-InxGa1−xAs/GaAs double quantum well by a parallel magnetic field

Magnetoresistance in n-InxGa1−xAs/GaAs (x ≈ 0.18) heterostructures with double quantum wells (DQWs) was studied in the magnetic field parallel to the DQW layer. Specific features of the magnetoresistance, related to the passing of the tunnel gap edges across the Fermi level, are revealed and studied. Agreement between the calculated and experimental positions of the observed features is obtained when the spin splitting of the energy spectrum is taken into account. Earlier, similar features were observed in the magnetoresistance of n-GaAs/AlxGa1−xAs DQW heterostructures, but the spin effects did not manifest themselves.

Effects of spin polarization in the HgTe quantum well

Magnetoresistivity features connected with the spin level coincidences under tilted fields in a

Probing the p-Ge1-xSix/Ge/p-Ge1-xSix quantum well by means of the quantum Hall effect

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The effect of infrared radiation on quantum magnetotransport in n-InGaAs/GaAs with two strongly coupled quantum wells

conduction band of the HgTe quantum well were found to align along straight trajectories in a

Features of quantum effects in two-dimensional GaAs∕n‐InGaAs∕GaAs structures with double quantum wells

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Nonmonotonic temperature dependence of the resistivity of p-Ge/Ge1−xSix in the region of the metal–insulator transition

plane between the field components perpendicular and parallel to the layer meaning a linear spin polarization dependence on magnetic field. Among the trajectories is a noticeable set of lines descending from a single point on the

Scaling in the quantum Hall effect regime in n-InGaAs/GaAs nanostructures

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Magnetotransport in Double Quantum Well with Inverted Energy Spectrum: HgTe/CdHgTe

axis, which is shown to yield a field of the full spin polarization of the electronic system, in agreement with the data on the electron redistribution between spin subbands obtained from Fourier transforms of oscillations along circle trajectories in the

Effect of spin-orbit coupling on the spectrum of two-dimensional electrons in a magnetic field

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