M. Wei

Bipolar resistive switching characteristics in CuO/ZnO bilayer structure

Resistive switching characteristics in Cu/ZnO/AZO (Al-doped ZnO) were investigated. Reproducible bipolar resistance switching properties were observed in the single oxide layer (SL)-based device. To improve the switching performance, a CuO–ZnO bilayer (BL) was used to form a Cu/CuO/ZnO/AZO structure. RS characteristics such as retention time, endurance, variations of threshold voltage as well as distribution of resistance were investigated. The results demonstrated that the BL devices exhibit more excellent switching performance than SL devices. The conduction mechanisms of high and low resistance states can be explained by trap-controlled space charge limited current (SCLC) and Ohmics Law, respectively. The CuO layer is proposed as a “reservoir” of oxygen ions in set process and acting as an oxygen ions “supplier” in reset process, which plays a critical role in recovery/rupture of filament paths and greatly improves the switching characteristics of the device.

Al3+ doping effects and high-field phase diagram of La0.5Sr0.5Mn1−x Al x O3

Magnetization measurements of La0.5Sr0.5Mn1−x Al x O3 (0 ≤ x ≤ 0.25) under pulsed high magnetic fields up to 50 T have been carried out, in which the Al3+ ions doping and magnetic field effects on the charge-ordering/antiferromagnetic to ferromagnetic phase transitions have been discussed. A triple-phase diagram with the critical field, doping level and temperature has been determined, in which the antiferromagntic and ferromagnetic phase boundaries were clearly defined. The change from long-range charge-ordered/antiferromagnetic phases to the robust short-range ones upon the Al3+-doping was observed. According to the experimental results, we assume that Al3+ ion doping at the Mn sites dilutes the Mn3+-O-Mn4+ network, weakens the double-exchange interaction and further suppresses the FM phase (metallic conduction), which leads to the critical magnetic fields destroying the antiferromagnetic order increase with the increase of the doping level.

The enhanced spontaneous dielectric polarization in Ga doped CuFeO2

The magnetic and dielectric polarization properties of the single crystal samples of CuFe1−xGaxO2 (x = 0 and 0.02) are investigated. Experimental results show that the magnetization and dielectric polarizations are anisotropy and coupled together. Compared with pure CuFeO2, in the case with the magnetic field parallel to the c axis, a field-induced phase transition with a hysteresis is clearly observed between the five-sublattice (5SL) and three-sublattice (3SL) phases. Specially, an obvious spontaneous dielectric polarization is observed in CuFe0.98Ga0.02O2 in a lower magnetic field region, indicating that the Ga doping has an effect on the enhancement of spontaneous dielectric polarization. Based on the dilution effect, change of exchange interaction, and partial release of the spin frustration due to the structural modulation of the Ga ion dopant, the origin of the magnetization, and spontaneous polarization characteristics are discussed and the complete dielectric polarization diagrams are assumed.

3D spin-flop transition in enhanced 2D layered structure single crystalline TlCo2Se2

The enhanced 2D layered structure single crystalline TlCo2Se2 has been successfully fabricated, which exhibits field-induced 3D spin-flop phase transitions. In the case of the magnetic field parallel to the c-axis (B//c), the applied magnetic field induces the evolution of the noncollinear helical magnetic coupling into a ferromagnetic (FM) state with all the magnetization of the Co ion parallel to the c-axis. A striking variation of the field-induced strain within the ab-plane is noticed in the magnetic field region of 20-30 T. In the case of the magnetic field perpendicular to the c-axis (B  ⊥  c), the inter-layer helical antiferromagnetic (AFM) coupling may transform to an initial canted AFM coupling, and then part of it transforms to an intermediate metamagnetic phase with the alignment of two-up-one-down Co magnetic moments and finally to an ultimate FM coupling in higher magnetic fields. The robust noncollinear AFM magnetic coupling is completely destroyed above 30 T. In combination with the measurements of magnetization, magnetoresistance and field-induced strain, a complete magnetic phase diagram of the TlCo2Se2 single crystal has been depicted, demonstrating complex magnetic structures even though the crystal geometry itself gives no indication of the magnetic frustration.

High magnetic field induced spin flip/flop behavior and magnetic phase diagram of CuFe{sub 1−x}Ga{sub x}O{sub 2}

Abstract The structure and magnetic properties of non-magnetic Ga 3+ ion doped CuFe 1− x Ga x O 2 ( x =0, 0.03, and 0.05) single crystal samples were investigated. X-ray diffraction patterns analysis confirms that the samples are single-phase crystallizing. Doping effect on the magnetic behavior of the ground state and the field-induced spin flip/flop transitions were detected. The transition temperatures and critical magnetic fields of the spin flip/flop, as well as the magnetic hysteresis directly depend on the Ga 3+ doping level. Such doping effects may associate with the competition between dilution effect (partial release of spin frustration) and the induced local magnetic moment, which is the result of the changed magnetic coupling both inter- and intra-planes of Fe ions. Based on the experimental results, the effects of Ga 3+ doping on the spin flip/flop behavior and a detailed high field magnetic diagram were assumed.