M.Z. Peng

Observation of metallic indium clusters in thick InGaN layer grown by metal organic chemical vapor deposition

Pure metallic indium clusters of 10–50nm are identified in In0.37Ga0.63N film grown by metal organic chemical vapor deposition based on analysis of x-ray diffraction, transmission electron microscopy, selected area diffraction, and high resolution transmission electron microscopy (HRTEM). The in-plane orientation relationships are InGaN[11−20]‖metallic indium [0−10], InGaN [1−100]‖metallic indium [−101], and InGaN [0001]‖metallic indium [101] along the growth direction. The rocking curve of indium (101) diffraction shows a large full width at half maximum of 3060arcsec, which is consistent with the small size of the indium clusters observed in HRTEM.