Ma Zongmin

The high precision measurements and instrumentswith special SPM technique

For many measurements, it is important to know the interaction of the measuring device with the artefact being measured in order to determine the accurate magnitude of the quantity. Mechanical, electrical, magnetic, optical and chemical properties of materials are also important parameters that need to be quantified at the micro/nano scale. On the other hand, SPM and related technique have the abilities to detect these interactions between sharp tips and sample surfaces. This paper mainly focuses on the review of development of the measurement using scanning probe microscopy (SPM) at micro/nano scale with high sensitivity and high resolution. Firstly, we introduce principles of SPMs, especially for AFM (Atomic Force Microscopy) and STM (Scanning Tunneling Microscopy). Then, instruments of LT/RT-STM, SP-STM and AFM systems were introduced, and some typical experimental results were discussed. In addition, micro/nano measurements in dead areas, characterization and manipulation of the micro/nano electronics in probe technique were mainly discussed. Finally, measurement progresses in magnetic materials using UHV-AFM were introduced. In conclusion, this article gives an overview of the foundations of SPM and applications in precision measurements. A large part of the article describes state of the SPMs, their essential components and recent developments in this field. Nevertheless, SPMs are advancing, supported by user-friendly and application-oriented features, improved software and combination with other instruments in many fields such as atomic/molecular science, NEMS (nano-electric-mechanical system), etc.

Study on MEMS tunneling effect gyroscope

A new structure of tunneling gyroscope which is high-accuracy and low-range was presented in this paper, as well as the structure and the operating principles of this gyroscope were analyzed. Besides, the simulations were made in this paper which is close to the principle. Then the structure was fabricated by MEMS technological processes. And its tunneling effect was tested by HP4156C high precise semiconductor parameter test instrumentation, there is linear relationship between the square of drive voltage and the logarithm of tunneling current through the test results, so it shows that the tunneling current is validate.