Mahbubul Hoq

Annealing temperature effect on structural, morphological and optical parameters of mesoporous TiO2 film photoanode for dye-sensitized solar cell application

Abstract Use of Degussa P25 titanium-dioxide nanopowder in dye-sensitized solar cell (DSSC) photoanode improves efficiency of the DSSC cell. Annealing of titanium dioxide is required for fabrication of crystalline mesoporous thin film photoanode on transparent conducting glass using doctor blade method. Different annealing temperatures provide different structural, morphological, and optical properties of the photoanode, which may influence the efficiency of the cell. In this paper, energy-dispersive X-ray spectroscopy (EDS), scanning electron microscopy (SEM), X-ray powder diffraction (XRD), and UV-Vis-NIR spectroscopicanalysis have been carried out to investigate annealing temperature effect on various structural parameters, mole-fraction, phase-content, and optical bandgap of the TiO2 film photoanode. It was observed that depending on annealing temperature, theratio of polymorphs of Degussa P25 changed substantially. For the change in annealing temperature from 350 °C to 600 °C, variations occurred in crystallite size from 11.9 nm to 24.9 nm, strain from 0.006 to 0.014, specific surface area from 62.77 m2·g-1 to 125.74 m2·g-1, morphology index from 0.49 to 0.64, dislocation density from 5 × 1013 line/m2 to 8 × 1015 line/m2, crystallite per unit surface area from 2 × 1013 m-2 to 2.5 × 1014 m-2, and optical bandgap from 2.4 eV to 3.1 eV.

Preparation and spectroscopic analysis of zinc oxide nanorod thin films of different thicknesses

Abstract Zinc oxide thin films with different thicknesses were prepared on microscopic glass slides by sol-gel spin coating method, then hydrothermal process was applied to produce zinc oxide nanorod arrays. The nanorod thin films were characterized by various spectroscopic methods of analysis. From the images of field emission scanning electron microscope (FESEM), it was observed that for the film thickness up to 200 nm the formed nanorods with wurtzite hexagonal structure were uniformly distributed over the entire surface substrate. From X-ray diffraction analysis it was revealed that the thin films had good polycrystalline nature with highly preferred c-axis orientation along (0 0 2) plane. The optical characterization done by UV-Vis spectrometer showed that all the films had high transparency of 83 % to 96 % in the visible region and sharp cut off at ultraviolet region of electromagnetic spectrum. The band gap of the films decreased as their thickness increased. Energy dispersive X-ray spectroscopy (EDS) showed the presence of zinc and oxygen elements in the films and Fourier transform infrared spectroscopy (FT-IR) revealed the chemical composition of ZnO in the film.

Study of the Enhancement of the Efficiency of the Monocrystalline Silicon Solar Cell by Optimizing Effective Parameters Using PC1D Simulation

In this paper, simulation of a monocrystalline silicon solar cell was done using PC1D software. The impact of different solar cell parameters, with their effects on power and efficiency, has been investigated. For a p-type monocrystalline silicon wafer, with an area of 10×10

Influence of Different Metals Back Surface Field on BSF Silicon Solar Cell Performance Deposited by Thermal Evaporation Method

10\times 10

Application of Aloe vera gel instead of silicon dioxide as organic dielectric material in microelectronics

cm2 and a thickness of 300 μm, initial simulation shows a 12.10% efficient solar cell. To optimize the simulation experimentally obtained data has been used in the texturization process. It is seen that the textured surface reduces reflection and increases the efficiency of the solar cell at least 1–2%. From the simulation it is seen that the optimum value of p-type doping concentration is 1×1017

Influence of Mg content on tailoring optical bandgap of Mg-doped ZnO thin film prepared by sol-gel method

1\times 10^{17}

Influence of total absorbed dose of gamma radiation on optical bandgap and structural properties of Mg-doped zinc oxide

cm− 3 and n-type doping concentration is 1×1018

Challenges and prospects of cost-effective Si-based solar cells fabrication in Bangladesh

1\times 10^{18}

Band gap Measurement of P – type Monocrystalline Silicon Wafer

cm− 3. 200.3 μm diffusion length is considered as optimum. Both sides textured wafer with pyramid height of 2–3 μm

Texturization of as-cut p-type monocrystalline silicon wafer using different wet chemical solutions

\mu \mathrm {m}