Mahbubul Islam

Mechanical properties of stanene under uniaxial and biaxial loading: A molecular dynamics study

Stanene, a graphene like two dimensional honeycomb structure of tin has attractive features in electronics application. In this study, we performed molecular dynamics simulations using modified embedded atom method potential to investigate mechanical properties of stanene. We studied the effect of temperature and strain rate on mechanical properties of α-stanene for both uniaxial and biaxial loading conditions. Our study suggests that with the increasing temperature, both the fracture strength and strain of the stanene decrease. Uniaxial loading in zigzag direction shows higher fracture strength and strain compared to the armchair direction, while no noticeable variation in the mechanical properties is observed for biaxial loading. We also found at a higher loading rate, material exhibits higher fracture strength and strain. These results will aid further investigation of stanene as a potential nano-electronics substitute.

eReaxFF: A Pseudoclassical Treatment of Explicit Electrons within Reactive Force Field Simulations

We present a computational tool, eReaxFF, for simulating explicit electrons within the framework of the standard ReaxFF reactive force field method. We treat electrons explicitly in a pseudoclassical manner that enables simulation several orders of magnitude faster than quantum chemistry (QC) methods, while retaining the ReaxFF transferability. We delineate here the fundamental concepts of the eReaxFF method and the integration of the Atom-condensed Kohn-Sham DFT approximated to second order (ACKS2) charge calculation scheme into the eReaxFF. We trained our force field to capture electron affinities (EA) of various species. As a proof-of-principle, we performed a set of molecular dynamics (MD) simulations with an explicit electron model for representative hydrocarbon radicals. We establish a good qualitative agreement of EAs of various species with experimental data, and MD simulations with eReaxFF agree well with the corresponding Ehrenfest dynamics simulations. The standard ReaxFF parameters available in the literature are transferrable to the eReaxFF method. The computationally economic eReaxFF method will be a useful tool for studying large-scale chemical and physical systems with explicit electrons as an alternative to computationally demanding QC methods.

Atomistic Representation of Anomalies in the Failure Behaviour of Nanocrystalline Silicene

Silicene, a 2D analogue of graphene, has spurred a tremendous research interest in the scientific community for its unique properties essential for next-generation electronic devices. In this work, for the first time, we present a molecular dynamics (MD) investigation to determine the fracture strength and toughness of nanocrystalline silicene (nc-silicene) sheet of varying grain sizes and pre-existing cracks at room temperature. Our results suggest a transition from an inverse pseudo Hall-Petch to a pseudo Hall-Petch behaviour in nc-silicene at a critical grain size of 17.32 nm. This phenomenon is also prevalent in nanocrystalline graphene. However, nc-silicene with pre-existing cracks exhibits anomalous crack propagation and fracture toughness behaviour. We observed two distinct types of failure mechanisms (crack sensitive and insensitive failure) and devised mechano-physical conditions under which they occur. The most striking outcome is: despite the presence of a pre-existing crack, the crack sensitivity of nc-silicene is found to be dependent on the grain size and their orientations. The calculated Fracture toughness from both Griffith’s theory and MD simulations indicate that the former over-predicts the fracture toughness of nc-silicene. Finally, this study is the first direct comparison of atomistic simulations to the continuum theories to predict the anomalous behaviour in deformation and failure mechanisms of nc-silicene.

Modeling resistive switching materials and devices across scales

Resistance switching devices based on electrochemical processes have attractive significant attention in the field of nanoelectronics due to the possibility of switching in nanosecond timescales, miniaturization to tens of nanometer and multi-bit storage. Their deceptively simple structures (metal-insulator-metal stack) hide a set of complex, coupled, processes that govern their operation, from electrochemical reactions at interfaces, diffusion and aggregation of ionic species, to electron and hole trapping and Joule heating. A combination of experiments and modeling efforts are contributing to a fundamental understanding of these devices, and progress towards a predictive understanding of their operation is opening the possibility for the rational optimization. In this paper we review recent progress in modeling resistive switching devices at multiple scales; we briefly describe simulation tools appropriate at each scale and the key insight that has been derived from them. Starting with ab initio electronic structure simulations that provide an understanding of the mechanisms of operation of valence change devices pointing to the importance of the aggregation of oxygen vacancies in resistance switching and how dopants affect performance. At slightly larger scales we describe reactive molecular dynamics simulations of the operation of electrochemical metallization cells. Here the dynamical simulations provide an atomic picture of the mechanisms behind the electrochemical formation and stabilization of conductive metallic filaments that provide a low-resistance path for electronic conduction. Kinetic Monte Carlo simulations are one step higher in the multiscale ladder and enable larger scale simulations and longer times, enabling, for example, the study of variability in switching speed and resistance. Finally, we discuss physics-based simulations that accurately capture subtleties of device behavior and that can be incorporated in circuit simulations.

Tuning the mechanical properties of silicene nanosheet by auxiliary cracks: a molecular dynamics study

Silicene has become a topic of interest nowadays due to its potential application in various electro-mechanical nanodevices. In our previous work on silicene, fracture stresses of single crystal and polycrystalline silicene have been investigated. Existence of defects in the form of cracks reduces the fracture strength of silicene nanosheets to a great extent. In this study, an engineering way has been proposed for improving the fracture stress of silicene nanosheets with a pre-existing crack by incorporating auxiliary cracks symmetrically in a direction perpendicular to the main crack. We call this mechanism the “Failure shielding mechanism”. An extensive molecular dynamics simulation based analysis has been performed to capture the atomic level auxiliary crack-main crack interactions. It is found that the main crack tip stress distribution is significantly changed with the presence of auxiliary cracks for loading along both armchair and zigzag directions. The effects of temperature and the crack propagation speed of silicene have also been studied. Interestingly, in the case of loading along the zigzag direction, SW defect formation is observed at the tip of main crack. This leads to a reduction of the tip stress resulting in a more prominent failure shielding in case of zigzag loading than in armchair loading. Moreover, the position and length of the cracks as well as the loading directions have significant impacts on the tip stress distribution. Finally, this study opens the possibilities of strain engineering for silicene by proposing an engineering way to tailor the fracture strength of silicene.

Deuterium uptake and sputtering of simultaneous lithiated, boronized, and oxidized carbon surfaces irradiated by low-energy deuterium

We study the effects of deuterium irradiation on D-uptake by simultaneously boronized, lithiated, oxidized, and deuterated carbon surfaces. We present analysis of the bonding chemistry of D for various concentrations of boron, lithium, oxygen, and deuterium on carbon surfaces using molecular dynamics with reactive force field potentials, which are here adapted to include the interaction of boron and lithium. We calculate D retention and sputtering yields of each constituent of the Li-C-B-O mixture and discuss the role of oxygen in these processes. The extent of the qualitative agreement between new experimental data for B-C-O-D obtained in this paper and computational data is provided. As in the case of the Li-C-O system, comparative studies where experimental and computational data complement each other (in this case on the B-Li-C-O system) provide deeper insights into the mechanisms behind the role that O plays in the retention of D, a relevant issue in fusion machines.

Influence of defects on thermal properties of stanene

Stanene is a two-dimensional, graphene-like honeycomb structure material, has been synthesized in a recent experimental study. Theoretically, it is expected to have a super conductive property near room temperature due to its spin orbital coupling effect. It is a potential material for the next generation nano-electronics application. Therefore, studying its thermal property is of particular interest. In this paper, we investigated the effect of different types of defects on the thermal conductivity of stanene nanosheets. Molecular Dynamics simulations are performed to calculate the thermal conductivity as a function of various types of defects. MEAM potential is used to describe the inter-atomic forces. It has been found that the presence of defects reduces the thermal conductivity significantly. Finally, vibrational density of states (DOS) are calculated to elucidate the underlying mechanisms of the reduction of thermal conductivity.