Maitry Dey

Germanium telluride as a BSF material for high efficiency ultra-thin CdTe solar cell

The polycrystalline cadmium telluride (CdTe) is regarded as one of the leading photovoltaic (PV) materials for its high efficiency and low-cost. The absorber material CdTe has the ideal and direct bandgap of 1.45 eV and it has a high absorption co-efficient over 5×105/cm. In this work, the possibility of ultra-thin absorber layer of CdS/CdTe solar cell was investigated by numerical analysis utilizing AMPS (Analysis of Microelectronic and Photonic Structures) simulator. In the proposed cell, the CdTe layer was reduced and found that 1 μm CdTe layer is enough for acceptable range of cell conversion efficiency. The viability of this ultra-thin CdTe absorber layer was examined, together with 0.1 μm GeTe back surface field (BSF) layer to reduce the barrier height in the valence band and to minimize the recombination losses at the back contact of the CdS/CdTe cell. It was found that the proposed ultra-thin cells have conversion efficiency of 18.68% (Jsc = 21.47 mA/cm2, FF = 0.85, Voc = 1.02 V) without BSF and with 100 nm GeTe BSF conversion efficiency increased to 22.53% (Jsc = 24.28 mA/cm2, FF = 0.875, Voc = 1.06 V) with only 0.8 μm of CdTe layer. Moreover, it was found that the normalized efficiency of the proposed cells linearly decreased with the increasing operating temperature at the gradient of -0.16%/°C, which indicated better stability of the proposed CdTe solar cell.

Design of high efficient and stable ultra-thin CdTe solar cells with ZnTe as a potential BSF

The polycrystalline ultra-thin cadmium telluride (CdTe) is familiar as the potential solar cell material for its higher efficiency, cost-effective, cell stability and clean generation of solar electricity. In this study, a numerical analysis has been performed utilizing AMPS (Analysis of Microelectronic and Photonic Structures) simulator to examine the cell performances (Voc, Jsc, FF and conversion efficiency) of ultra-thin CdTe solar cell. During the research, reduction of CdTe layer was done in the proposed cell and found that 1μm absorber layer is enough for acceptable range for cell conversion efficiency. The possibility of this ultra-thin CdTe absorber layer was examined, as one with 100 nm ZnTe back surface field (BSF) layer to minimize the recombination losses at the back contact and to reduce the barrier height in the valence band of the proposed cell. Higher conversion efficiency of 22.53% (Jsc = 24.28 mA/cm2, FF = 0.875, Voc = 1.06 V) has been achieved with only 0.8 μm of CdTe absorber layer along with 100 nm ZnTe BSF where as conversion efficiency is 18.68% (Jsc = 21.47 mA/cm2, FF = 0.85, Voc = 1.02 V) without BSF layer. Moreover, the proposed CdTe solar cell showed better stability as the normalized efficiency of the proposed cell linearly decreased with the increasing operating temperature at the gradient of -0.16%/°C.

High performance and stable molybdenum telluride PV cells with Indium Telluride BSF

Molybdenum telluride (MoTe₂) is a very promising candidate as PV cell for better cell stability and performance. In this research work, AMPS (Analysis of Microelectronic and Photonic Structures) simulator was used to examine the performance parameters (Jsc, Voc, FF and conversion efficiency) of ultra-thin MoTe₂ PV cell through numerical analysis. During the study, it was found that absorber layer thickness of MoTe₂ PV cell is adequate to achieve cell efficiency at satisfactory level. In addition, the hidden potentiality of MoTe₂ PV cell was examined by inserting Indium Telluride (ImTe₃) back surface field (BSF) between absorber layer and back contact metal. The conversion efficiency of 17.06% (FF = 0.730, V_oc = 0.98 V and J_sc = 23.74 mA/cm²) has been achieved for 1 μm absorber layer of MoTe₂ PV cell without BSF, whereas higher conversion efficiency is 25.29% (FF = 0.847, V_oc = 1.08 V and Jsc = 27.60 mA/cm²) achieved at room temperature with only 0.7 μm of MoTe₂ absorber layer along with 100 nm In₂Te₃ BSF. This research work compares the thermal stability of the structure of MoTe2 PV cell with and without BSF. It was found that the normalized efficiency decreased in response of increasing the operating temperature at the gradient of -0.0275%/°C without BSF. For the addition of In₂Te₃ BSF in the proposed MoTe₂ PV cell, the degradation of normalized efficiency was too less in the range of higher operating temperature.

Design of highly stable and efficient molybdenum telluride PV cells with arsenic telluride BSF

For high efficiency and better thermal stability, Molybdenum Telluride (MoTe<inf>2</inf>) is remarkable as potential photovoltaic (PV) cell. AMPS (Analysis of Microelectronic and Photonic Structures) simulator is used to investigate the cell performance parameters to design the highly efficient ultra-thin MoTe<inf>2</inf> PV cell. In this research work, it has been explored that the cell conversion efficiency of MoTe<inf>2</inf> PV cell is improved with the insertion of Arsenic Telluride (As<inf>2</inf>Te<inf>3</inf>) as back surface field (BSF) above the back contact metal. The highest conversion efficiency of 25.08% was found for As<inf>2</inf>Te<inf>3</inf> BSF with only 0.9 μm of absorber layer whereas it was 17.06% for no BSF with 1 μm thickness of absorber layer. The thermal stability of MoTe<inf>2</inf> PV cell with As<inf>2</inf>Te<inf>3</inf> BSF showed better stability also.

Enhancement the performance of Molybdenum Telluride solar cells with Zinc Telluride BSF

The binary semiconductor compound Molybdenum telluride (MoTe2) is For high efficiency and better thermal stability, Molybdenum telluride (MoTe2) is considered as potential solar cell. AMPS (Analysis of Microelectronic and Photonic Structures) simulator is used to investigate the cell performance parameters for ultra-thin MoTe2 PV cell. In this research work, it has been explored that the cell conversion efficiency of MoTe2 PV cell is improved with the insertion of Zinc Telluride (ZnTe) as back surface field (BSF) above the back contact metal. The highest conversion efficiency of 25.29% was found for ZnTe BSF with only 0.7 µm of absorber layer whereas it was 17.06% for no BSF with 1 µm thickness of absorber layer. The thermal stability of MoTe2 PV cell with ZnTe BSF showed better stability.

High efficient and stable ultra-thin CdTe solar cell with a potential Copper Telluride BSF

CdTe is recognized as leading solar cell for having the feature of low cost, high efficiency and better cell stability. The BSF strategy below the absorber layer of CdTe solar cell showed the possibility of higher power conversion efficiency. In this research work, Copper Telluride (Cu2Te) BSF is used to explore the hidden potentiality of CdTe solar cell at ultra-thin level. It was investigated that the addition of Cu2Te BSF significantly enhanced the cell conversion efficiency to 22.51% (Jsc = 24.26 mA/cm2, FF = 0.875, Voc = 1.06 V) with only 0.8 µm of absorber layer in CdTe solar cell. In addition, the cell stability was improved by adding Cu2Te BSF layer in CdTe solar cell and the temperature co-efficient (TC) was 0.16%/°C which indicated better thermal stability.

Modeling of Cu 2 ZnSnS 4 solar cells with Bismuth Sulphide as a potential buffer layer

The Cu2ZnSnS4 is a quaternary semiconductor compound has recently been drawn the attention of extensive research as a potential absorber layer since its offers favourable optical and electronic properties along with low cost material. In this research work, the deep level defects on the performance of CZTS solar cells with Bismuth Sulphide (Bi2S3) buffer layer was carried out by numerical analysis using SCAPS 2802 simulator. In the proposed cell, the CZTS absorber layer was reduced that minimized the cost, saving process time and energy required for fabrication. In this study, it was found that the feasibility of this proposed ultra thin CZTS solar cells and showed higher efficiency of 17.89% (Jsc = 31.05 mA/cm2, Voc = 1.03V and FF = 0.562). Moreover, the thermal stability of the CZTS solar cell was examined and found that the normalized efficiency of the proposed cell was linearly decreased with the increased of operating temperature at the gradient of -0.41%/°C.

Study of molybdenum sulphide as a novel buffer layer for CZTS solar cells

The absorber layer of CZTS solar cell is a compound semiconductor which has favourable optical and electrical properties. Researchers are highly interest to investigate the CZTS solar cells for its earth abundant, non-toxic and low cost feature. Consequently, the absorber layer of CIGS is replaced to CZTS absorber layer. In this research work, the potentiality of Molybdenum Sulphide (MoS2) as buffer has been investigated to explore the higher performance of CZTS solar cells. SCAPS 2802 simulator was used to evaluate the performance of CZTS solar cells with prospective MoS2 buffer layer. The possibility of ultra-thin CZTS solar cells was examined and the higher efficiency of 17.03% (Jsc = 29.42 mA/cm2, Voc = 1.01 V and FF = 0.574) was achieved for 1 μm thickness of absorber layer. In addition, the proposed CZTS solar cells had better thermal stability at higher operating temperature also.

Design of ultra-thin CZTS solar cells with indium selenide as buffer layer

The demand of energy is growing rapidly in response of the development of the world. The crucial solution of large amount of energy is to harvest alternative source of energy. Sustainable development can be possible by harvesting solar energy as it is smoke free, clean and environment friendly. For low cost, non-toxic and earth abundant feature, CZTS solar cell is very prominent to generate solar power. During this study, numerical analysis has been done by SCAPS 2802 simulator to examine the performance of CZTS solar cell with Indium Sulphide (InSe) buffer layer. In this research work, the proposed ultra-thin CZTS solar cells showed higher efficiency of 16.30% (FF = 0.584, Jsc = 28.06 mA/cm2 and Voc = 1.00 V). In addition, the cell stability of the proposed cell showed better result.

Numerical modeling of SnS ultra-thin solar cells

In modern civilization, the solar energy as renewable energy is chosen for the generation of the clean and green energy which is very reliable in response of sustainable development. The SnS is a binary semiconductor compound which has very favourable optoelectronic properties for lost cost thin film solar cell. Therefore, the researchers have great attention to investigate the ultra-thin SnS solar cell. In this research work, the deep level defects on the performance of SnS solar cells with Bismuth Sulfide (Bi2S3) as window layer material was carried out by numerical analysis using SCAPS 2802 simulator. In the proposed cell, the SnS absorber layer was reduced that minimized the cost, saving process time and energy required for fabrication. In this study, it was found that the feasibility of this proposed ultra thin SnS solar cells and showed higher efficiency of 20.05 % (Jsc = 36.61 mA/cm2, FF = 0.614, Voc = 0.89 V). Consequently, it has been investigated the thermal stability of the SnS solar cell to explore the hidden potentiality of absorber layer.