Maja Harfman-Todorovic

A comparative study of central and distributed MPPT architectures for megawatt utility and large scale commercial photovoltaic plants

In this paper different distributed PV architectures are studied from an energy yield perspective. These distributed architectures are applied to massively paralleled thin film plants employing high voltage PV modules, mc-Si plants with long series strings of low voltage modules and plants with medium voltage thin film modules in order to evaluate the effectiveness of the distributed architecture in each case. The effects of partial shading, module mismatch and cable losses are quantified in order to obtain the energy yield for each of the architectures under study. The results of this trade-off study are used to quantify the benefits of a distributed architecture as well as determine the optimal location of the dc/dc converters that perform the MPPT function.

An Efficient Partial Power Processing DC/DC Converter for Distributed PV Architectures

In this paper, a dc/dc power converter for distributed photovoltaic (PV) plant architectures is presented. The proposed converter has the advantages of simplicity, high efficiency, and low cost. High efficiency is achieved by having a portion of the input PV power directly fed forward to the output without being processed by the converter. The operation of this converter allows for a simplified maximum power point tracker design using fewer measurements. The stability analysis of the distributed PV system comprised of the proposed dc/dc converters confirms the stable operation even with a large number of deployed converters. The experimental results show a composite weighted efficiency of 98.22% with very high maximum power point tracking efficiency.

A High-Power-Density DC–DC Converter for Distributed PV Architectures

In order to maximize the solar energy harvesting capabilities, power converters for photovoltaic (PV) systems have to be designed for high efficiency, accurate maximum power point tracking (MPPT) and voltage/current performance. When many converters are used in distributed PV systems, power density also becomes an important factor since it allows for simpler system integration. In this paper, a high power density string level MPPT DC-DC converter suitable for distributed medium to large scale PV installations is presented. A simple partial power processing topology implemented exclusively with silicon carbide devices provides high efficiency and high power density. A 3.5kW, 100 kHz converter is designed and tested to verify the proposed methods.

Dc-dc converter topology assessment for large scale distributed photovoltaic plant architectures

Distributed photovoltaic (PV) plant architectures are emerging as a replacement for the classical central inverter based systems. However, power converters of smaller ratings may have a negative impact on system efficiency, reliability and cost. Therefore, it is necessary to design converters with very high efficiency and simpler topologies in order not to offset the benefits gained by using distributed PV systems. In this paper an evaluation of the selection criteria for dc-dc converters for distributed PV systems is performed; this evaluation includes efficiency, simplicity of design, reliability and cost. Based on this evaluation, recommendations can be made as to which class of converters is best fit for this application.

Overview of 1.2kV – 2.2kV SiC MOSFETs targeted for industrial power conversion applications

This paper presents the latest 1.2kV-2.2kV SiC MOSFETs designed to maximize SiC device benefits for high-power, medium voltage power conversion applications. 1.2kV, 1.7kV and 2.2kV devices with die size of 4.5mm × 4.5mm were fabricated, exhibiting room temperature on-resistances of 34mOhm, 39mOhm and 41mOhm, respectively. The ability to safely withstand single-pulse avalanche energies of over 17J/cm2 is demonstrated. Next, the 1.7kV SiC MOSFETs were used to fabricate half-bridge power modules. The module typical onresistance was 7mOhm at Tj=25°C and 11mOhm at 150°C. The module exhibits 9mJ turn-on and 14mJ turn-off losses at Vds=900V, Id=400A. Validation of GEs SiC MOSFET performance advantages was done through continuous buck-boost operation with three 1.7kV modules per phase leg exhibiting 99.4% efficiency. Device ruggedness and tolerance to terrestrial cosmic radiation was evaluated. Experimental results show that higher voltage devices (2.2kV and 3.3kV) are more susceptible to cosmic radiation, requiring up to 45% derating in order to achieve module failure rate of 100 FIT, while 1.2kV MOSFETs require only 25% derating to deliver similar FIT rate. Finally, the feasibility of medium voltage power conversion based on series connected 1.2kV SiC MOSFETs with body diode is demonstrated.

An Isolated Resonant AC-Link Three-Phase AC–AC Converter Using a Single HF Transformer

An isolated three-phase ac-ac converter with a high frequency (HF) ac link, soft switching operation, high input power factor, and bidirectional power flow is introduced. The galvanic isolation is attained by a single HF transformer, which is substantially smaller than the line-frequency transformers. Moreover, the magnetizing inductance of this transformer and two small ac capacitors form the convertors HF ac link; no bulky short-life electrolytic capacitor is used. The magnetizing inductance is the main component for transferring power, and the link capacitors provide partial resonance to achieve zero voltage switching for the power switches in all operating modes. The basic operation of the topology is composed of 16 modes and is described. The detailed analysis of the proposed topology is carried out to reveal further the converters behavior in different operating conditions. The simulation and experimental results are also provided to demonstrate the effectiveness of the proposed power converter.

High performance SiC MOSFET module for industrial applications

A novel 1.7kV, 500A low inductance half-bridge module has been developed for fast-switching SiC devices. The module has a maximum temperature rating of 175°C. There are 12 GE SiC MOSFET chips per switch and the MOSFETs body diode is utilized as the freewheeling diode. The modules typical on-resistance is 3.8mOhms at 25°C and 5.8mOhms at 175°C. Internal loop inductance measured from DC input terminals is 4.5nH, approximately 75% lower than that of a standard IGBT module. When connected to a low inductance busbars, the module can be switched in 50ns without excessive voltage and current overshoots. Double pulse inductive switching losses at VDS=1000V, Id=450A and TJ=150°C are: EON=21.5mJ, EOFF=16.5mJ and EREC=6mJ. The losses are at least ten times lower when compared to a similarly rated IGBT module, highlighting the SiC advantage for higher switching frequency applications. Short circuit testing was performed, demonstrating good ruggedness albeit the need for a fast protection circuit.

A high efficiency PV micro-inverter with grid support functions

This paper presents a new photovoltaic (PV) micro-inverter topology. The topology is based on a partial power processing resonant front end dc-dc stage, followed by an interleaved inverter stage. The input stage provides high efficiency, and flexibility of design for wide input voltage range and the output stage provides an effective switching ripple of twice the PWM frequency, which reduces the output filter requirement. The designed micro-inverter can also provide grid Volt/VAR support functions according to commands received by the grid. Circuit topology and operation are presented as well as experimental results for the micro-inverter. The overall micro-inverter efficiency is 96%.

Readiness of SiC MOSFETs for Aerospace and Industrial Applications

This paper highlights ongoing efforts to validate performance, reliability and robustness of GE SiC MOSFETs for Aerospace and Industrial applications. After summarizing ruggedness and reliability testing performed on 1.2kV MOSFETs, two application examples are highlighted. The first demonstrates the 1.2kV device performance in a prototype high frequency 75kW Aviation motor drive. The second highlights the experimental demonstration of a 99% efficient 1.0MW solar inverter using 1.7kV MOSFET modules in a two-level topology switching at 8kHz. Both applications illustrate that SiC advantage is not only in improved performance, but also in significant system cost savings through simplifications in topology, controls, cooling and filtering.

A transformer-less partial power boost converter for PV applications using a three-level switching cell

Photovoltaic architectures with distributed power electronics provide many advantages in terms of energy yield as well as system level optimization. As the power level of the solar farm increases it becomes more beneficial to increase the dc collection network voltage, which requires the use of power devices with higher voltage ratings, and thus making the design of efficient, low cost, distributed power converters more challenging. In this paper a simple partial power converter topology is proposed. The topology is implemented using a three-level switching cell, which allows the use of semi-conductor devices with lower voltage rating; thus improving design and performance and reducing converter cost. This makes the converters suitable for use for medium to high power applications where dc-link voltages of 600V~1kV may be needed without the need for high voltage devices. Converter operation and experimental results are presented for two partial power circuit variants using three-level switching cells.