Makoto Akiba

Measurement and simulation of the effect of snowfall on free-space optical propagation

We measured the time variation of a received laser signal level during snowfall over a distance of 72 m. The signal level dropped sharply for up to 10 ms when a snowflake crossed the laser beam. The probability distribution of the variation due to snowfall was calculated by assuming it to be the linear superposition of the light diffracted by snowflakes. The measured distributions could be reproduced by assuming reasonable snowflake size distributions. Furthermore, the probability distributions due to snowfall over a 1 km distance were calculated, and the expected bit errors during snowfall and the transmitted beam sizes were evaluated.

Multipixel silicon avalanche photodiode with ultralow dark count rate at liquid nitrogen temperature

Multipixel silicon avalanche photodiodes (Si APDs) are novel photodetectors used as silicon photomultipliers (SiPMs), or multipixel photon counter (MPPC), because they have fast response, photon-number resolution, and a high count rate; one drawback, however, is the high dark count rate. We developed a system for cooling an MPPC to liquid nitrogen temperature and thus reduce the dark count rate. Our system achieved dark count rates of <0.2 cps. Here we present the afterpulse probability, counting capability, timing jitter, and photon-number resolution of our system at 78.5 K and 295 K.

Design of wide-field submillimeter-wave camera using SIS photon detectors

SIS photon detectors are niobium-based superconducting direct detectors for submillimeter-wave that show superior performance when compared with bolometric detectors for ground-based observations. We present the design and development of the SIS photon detectors together with optical and cryogenic components for wide field continuum observation system on Atacama Submillimeter Telescope Experiment (ASTE). Using antenna coupled distributed junctions, SIS photon detectors give wide band response in a 650-GHz atmospheric window as well as high current sensitivity, shot noise limited operation, fast response and high dynamic range. Optical noise equivalent power (NEP) was measured to be 1.6x10-16 W/Hz0.5 that is less than the background photon fluctuation limit for ground based submillimeter-wave observations. Fabrication of focal plane array with 9 detector pixels is underway to install in ASTE. Readout electronics with Si-JFETs operating at about 100 K will be used for this array. Development of readout electronics for larger array is based on GaAs-JFETs operating at 0.3 K. For the purpose of installing 100 element array of SIS photon detectors, we have developed remotely operable low-vibration cryostat, which now cools bolometers for 350, 450, 850-µm observations down to 0.34 K. GM-type 4-K cooler and He3/He4 sorption cooler is used, which can be remotely recycled to keep detectors at 0.34 K. Since we have large optical window for this cryostat, sapphire cryogenic window is used to block infrared radiation. The sapphire window is ante-reflection coated with SiO2 by chemical vapor deposition (CVD). The transmittance of the cryogenic window at 650 GHz is more than 95%.

Photon number resolving SiPM detector with 1 GHz count rate

We demonstrate 1 GHz count rate photon detection with photon number resolution by using a multi-pixel photon counter (MPPC) and performing baseline correction. A bare MPPC chip mounted on a high-frequency circuit board is employed to increase response speed. The photon number resolving capability is investigated at high repetition rates. This capability remains at a repetition rate of 1 GHz and at rates as high as an average of 2.6 photons detected per optical pulse. The photon detection efficiencies are 16% at λ = 450 nm and 4.5% at λ = 775 nm with a dark count rate of 270 kcps and an afterpulse probability of 0.007.

Optimum detection for extracting maximum information from symmetric qubit sets

We demonstrate a class of optimum detection strategies for extracting the maximum information from sets of equiprobable real symmetric qubit states of a single photon. These optimum strategies have been predicted by Sasaki et al. [Phys. Rev. A 59, 3325 (1999)]. The peculiar aspect is that the detections with at least three outputs suffice for optimum extraction of information regardless of the number of signal elements. The cases of ternary (or trine), quinary, and septenary polarization signals are studied where a standard von Neumann detection (a projection onto a binary orthogonal basis) fails to access the maximum information. Our experiments demonstrate that it is possible with present technologies to attain about 96% of the theoretical limit.

Ultrahigh-sensitivity high-linearity photodetection system using a low-gain avalanche photodiode with an ultralow-noise readout circuit.

A highly sensitive photodetection system with a detection limit of 1 photon/s was developed. This system uses a commercially available 200-microm-diameter silicon avalanche photodiode (APD) and an in-house-developed ultralow-noise readout circuit, which are both cooled to 77 K. When the APD operates at a low gain of approximately 10, it has a high-linearity response to the number of incident photons and a low excess noise factor. The APD also has a high quantum efficiency and a dark current of less than 1 e/s at 77 K. This photodetection system will shorten measurement time and permit higher spatial and wavelength resolution for near-field scanning optical microscopes.

Ultrahigh-sensitivity single-photon detection with linear-mode silicon avalanche photodiode

We developed an ultrahigh-sensitivity single-photon detector using a linear-mode avalanche photodiode (APD) with a cryogenic low-noise readout circuit; the APD is operated at 78K. The noise-equivalent power of the detector is as low as 2.2x10(-20)W/Hz(1/2) at a wavelength of 450nm. The photon-detection efficiency and dark-count rate (DCR) are 0.72 and 0.0008counts/s, respectively. A low DCR is achieved by thermal treatment for reducing the trapped carriers when the thermal treatment temperature is above 100K.

Ultralow-noise readout circuit with an avalanche photodiode: toward a photon-number-resolving detector

The charge-integration readout circuit was fabricated to achieve an ultralow-noise preamplifier for photoelectrons generated in an avalanche photodiode with linear mode operation at 77 K. To reduce the various kinds of noise, the capacitive transimpedance amplifier was used and consisted of low-capacitance circuit elements that were cooled with liquid nitrogen. As a result, the readout noise is equal to 3.0 electrons averaged for a period of 40 ms. We discuss the requirements for avalanche photodiodes to achieve photon-number-resolving detectors below this noise level.

Ultralow-noise near-infrared detection system with a Si p–i–n photodiode

Noises associated with materials and devices in the readout circuits for a Si p-i-n photodiode have been measured. The dielectric polarization noise of the materials and devices near the gate circuit of the junction field-effect transistor used for the preamplifier determined the photodetection limits of photodiodes with a diameter smaller than several millimeters. We fabricated an ultralow-noise photodetection system, minimizing the polarization noise as much as possible. The readout noises of the system were 10 and 18 electrons in a correlated double sample for 0.1- and 1-mm-diameter Si p-i-n photodiodes at 77 K, respectively.

Experimental Determination of the Gain Distribution of an Avalanche Photodiode at Low Gains

A measurement system for determining the gain distributions of avalanche photodiodes (APDs) in a low gain range is presented. The system is based on an ultralow-noise charge-sensitive amplifier and detects the output carriers from an APD. The noise of the charge-sensitive amplifier is as low as 4.2 electrons at a sampling rate of 200 Hz. The gain distribution of a commercial Si APD with low average gains is presented, demonstrating the McIntyre theory in the low gain range.