Man Weidong

Optical Characterization of Diamond Synthesis Using CH3OH-H2 Gas Mixtures

Diamond films with high infrared transmittance have been successfully deposited using CH3OH-H2 gas mixtures through microwave plasma enhanced chemical vapor deposition (MWCVD). The primary purpose of this study is to determine the effect of the deposition conditions on the optical properties of MWCVD diamond films using CH3OH-H2 gas mixtures. Room temperature optical properties of freestanding diamond films were studied by Fourier transform IR spectroscopy. Experimental results indicated that under appropriate deposition temperature (620 °C) and methanol concentration (5.7%), the refractive index of CVD diamond films (2.33) was comparable with that of natural diamond (2.417). The average infrared transmittance was above 65% in the middle infrared region (500 cm-1-4000 cm-1), approaching to the theoretical value of diamond (71.4%). The mechanism of growing high IR transmittance diamond films by utilizing CH3OH-H2 gas system is that the high methanol concentration used in this study makes the surface roughness of diamond films decreased by increasing the secondary nucleation density and the high O/C ratio in CH3OH-H2 gas system, improved the quality of diamond films and therefore decreased the absorption of non-diamond carbon in the films.

Microwave CVD Thick Diamond Film Synthesis Using CH4/H2/H2O Gas Mixtures

Thick diamond films with a thickness of up to 1.2 mm and a area of 20 cm2 have been grown in a homemade 5 kW microwave plasma chemical vapor deposition (MPCVD) reactor using CH4/H2/H2O gas mixtures. The growth rate, radial profiles of the film thickness, diamond morphology and quality were evaluated with a range of parameters such as the substrate temperature of 700 oC to 1100 oC, the fed gas composition CH4/H2 = 3.0%, H2O/H2 = 0.0%~ 2.4%. They were characterized by scanning electron microscopy and Raman spectroscopy. Translucent diamond wafers have been produced without any sign of non-diamond carbon phases, Raman peak as narrow as 4.1 cm?1. An interesting type of diamond growth instability under certain deposition conditions was observed in a form of accelerated growth of selected diamond crystallites of a very big lateral size, about 1 mm, and of a better structure compared to the rest of the film.

Growth of Free-Standing Diamond Films on Stainless Steel

Free-standing diamond films have been successfully deposited on stainless steel substrates using microwave plasma-assisted chemical vapor deposition. Although iron, which is the main element of stainless steel, is known to inhibit the nucleation of diamond and enhance the formation of graphite, we were able to grow relatively thick films (- 1.2 mm). The films were easily detachable from the substrates. The poor adhesion made it possible to obtain free-standing diamond films without chemical etching. Raman spectroscopy showed the 1332 cm-1 characteristic Raman peak of diamond and the 1580 cm-1, 1350 cm-1 bands of graphite on the growth surface and backside of the films, respectively. By energy dispersive x-ray spectroscopy it was only possible to detect iron on the back of the films, but not on the surface. The role of iron in the film growth is discussed.

Microwave Plasma Chemical Vapor Deposition of Diamond Films on Silicon From Ethanol and Hydrogen

Diamond films with very smooth surface and good optical quality have been deposited onto silicon substrate using microwave plasma chemical vapor deposition (MPCVD) from a gas mixture of ethanol and hydrogen at a low substrate temperature of 450°C. The effects of the substrate temperature on the diamond nucleation and the morphology of the diamond film have been investigated and observed with scanning electron microscopy (SEM). The microstructure and the phase of the film have been characterized using Raman spectroscopy and x-ray diffraction (XRD). The diamond nucleation density significantly decreases with the increasing of the substrate temperature. There are only sparse nuclei when the substrate temperature is higher than 800°C although the ethanol concentration in hydrogen is very high. That the characteristic diamond peak in the Raman spectrum of a diamond film prepared at a low substrate temperature of 450°C extends into broadband indicates that the film is of nanophase. No graphite peak appeared in the XRD pattern confirms that the film is mainly composed of SP3 carbon. The diamond peak in the XRD pattern also broadens due to the nanocrystalline of the film.

Synthesis of Carbon Nanotubes by MWPCVD at Low Temperature

Growth of carbon nanotubes (CNTs) at low temperature is very important to the applications of nanotubes. In this paper, under the catalytic effect of cobalt nanoparticles supported by SiO2, CNTs were synthesized by microwave plasma chemical vapor deposition (MWPCVD) below 500°C. It demonstrates that MWPCVD can be a very efficient process for the synthesis of CNTs at low temperature.

Synthesis of a Large Diamond Crystal with a Smooth (100) Facet at its Top Through MPCVD

A large diamond crystal up to 500 μm in diameter with a smooth (100) facet at its top has been synthesized on Mo substrate through microwave plasma chemical vapor deposition (MPCVD). Its morphology and quality were characterized by scanning electron microscopy (SEM), and the growth mechanism was roughly illustrated from both macroscopic and microscopic viewpoints. It was found that morphological instabilities are a major factor resulting in synthesis of large diamond crystals, moreover, high microwave power density (MPD), high CH4 concentrations, high pressure, high substrate surface temperature and the addition of a small amount of O2 were also necessary for the synthesis of large diamond crystals.

Growth of Aligned Carbon Nanotubes through Microwave Plasma Chemical Vapor Deposition

Aligned carbon nanotubes (CNTs) were synthesized on glass by microwave plasma chemical vapor deposition (MWPCVD) with a mixture of methane and hydrogen gases at the low temperature of 550 °C. The experimental results show that both the self-bias potential and the density of the catalyst particles are responsible for the alignment of CNTs. When the catalyst particle density is high enough, strong interactions among the CNTs can inhibit CNTs from growing randomly and result in parallel alignment.

Effect of Plasma Boronitriding on Diamond Nucleation and Growth onto Cemented Carbide Substrates

Plasma boronitriding has been successfully employed to overcome the difficulty in diamond growth on ferrous-based substrates. Commercial cobalt-sintered, tungsten-cemented carbides (WC(Co)) were pretreated by a plasma boronitriding method, diamond was then deposited by microwave-enhanced chemical vapor deposition (MPCVD). The deposited films were characterized by scanning electron microscopy and Raman spectroscopy. Continuous diamond films with a sharp characteristic Raman peak of 1334 cm-1 were grown and adhered well on the boronitrided region of the cemented carbide substrates. On the other hand, a mixture of diamond crystallites, amorphous carbon and graphitic carbon was loosely deposited on the unboronitrided region. A cobalt inert thin layer formed after plasma boronitriding pretreatment enabled the subsequent nucleation and growth of a high-quality CVD diamond.