Maneesh Chandran

Nitrogen termination of single crystal (100) diamond surface by radio frequency N2 plasma process: An in-situ x-ray photoemission spectroscopy and secondary electron emission studies

In this letter, we report the electronic and chemical properties of nitrogen terminated (N-terminated) single crystal (100) diamond surface, which is a promising candidate for shallow NV− centers. N-termination is realized by an indirect RF nitrogen plasma process without inducing a large density of surface defects. Thermal stability and electronic property of N-terminated diamond surface are systematically investigated under well-controlled conditions by in-situ x-ray photoelectron spectroscopy and secondary electron emission. An increase in the low energy cut-off of the secondary electron energy distribution curve (EDC), with respect to a bare diamond surface, indicates a positive electron affinity of the N-terminated diamond. Exposure to atomic hydrogen results in reorganization of N-terminated diamond to H-terminated diamond, which exhibited a negative electron affinity surface. The change in intensity and spectral features of the secondary electron EDC of the N-terminated diamond is discussed.

Integration of perovskite PZT thin films on diamond substrate without buffer layer

Integration of lead zirconate titanate (PZT) thin film on diamond substrate offers a great deal of potential for the application of multifunctional devices under extreme conditions. However, fabrication of perovskite PZT thin films on diamond substrate without a buffer layer has not been realized to date. We report for the first time on the successful deposition of PZT thin film directly on a diamond substrate without any buffer layer using the pulsed-laser deposition technique. The perovskite phase was realized only under specific growth conditions. X-ray diffraction and Raman studies confirmed the perovskite phase. The ferroelectric behaviour of the deposited PZT thin film was confirmed using piezo response microscope phase image and ferroelectric hysteresis loop.

Anomalous room temperature magnetoresistance in brownmillerite Ca2Fe2O5

We demonstrate the hitherto unreported field induced magnetoresistance in wet chemical synthesized bulk polycrystalline brownmillerite Ca2Fe2O5. A magnetoresistance of 12% is observed at room temperature, well below its antiferromagnetic transition temperature of 775 K. The variation in resistivity with increasing and decreasing magnetic field shows a significant memory effect. When synthesized in a nanostructured form it exhibits weak ferromagnetism due to the appearance of an Fe oxide phase, besides exhibiting a shift to a higher antiferromagnetic Neel temperature of 820 K. Spectroscopic investigations (X-ray photoelectron and Raman spectroscopy) as well as magnetic measurements have been employed to investigate the above behavior of brownmillerite Ca2Fe2O5.

Effect of boron doping on first-order Raman scattering in superconducting boron doped diamond films

Aggregation of impurity levels into an impurity band in heavily boron doped diamond results in a background continuum and discrete zone centre phonon interference during the inelastic light scattering process. In order to understand the Raman scattering effect in granular BDD films, systematically heavily doped samples in the semiconducting and superconducting regimes have been studied using the excitation wavelengths in the UV and visible regions. A comprehensive analysis of the Fano resonance effect as a function of the impurity concentrations and the excitation frequencies is presented. Various Raman modes available in BDD including signals from the grain boundaries are discussed.

Fabrication of a nanometer thick nitrogen delta doped layer at the sub-surface region of (100) diamond

In this letter, we report on the proof of a concept of an innovative delta doping technique to fabricate an ensemble of nitrogen vacancy centers at shallow depths in (100) diamond. A nitrogen delta doped layer with a concentration of ∼1.8 × 1020 cm−3 and a thickness of a few nanometers was produced using this method. Nitrogen delta doping was realized by producing a stable nitrogen terminated (N-terminated) diamond surface using the RF nitridation process and subsequently depositing a thin layer of diamond on the N-terminated diamond surface. The concentration of nitrogen on the N-terminated diamond surface and its stability upon exposure to chemical vapor deposition conditions are determined by x-ray photoelectron spectroscopy analysis. The SIMS profile exhibits a positive concentration gradient of 1.9 nm/decade and a negative gradient of 4.2 nm/decade. The proposed method offers a finer control on the thickness of the delta doped layer than the currently used ion implantation and delta doping techniques.

Growth and characterization of diamond particles, diamond films, and CNT-diamond composite films deposited simultaneously by hot filament CVD

It is important to understand the growth of CNT-diamond composite films in order to improve the inter-link between two carbon allotropes, and, in turn, their physical properties for field emission and other applications. Isolated diamond particles, continuous diamond thin films, and thin films of carbon nanotubes (CNTs) having non-uniformly distributed diamond particles (CNT-diamond composite films) were simultaneously grown on unseeded, seeded, and catalyst pre-treated substrates, respectively, using a large-area multi-wafer-scale hot filament chemical vapor deposition. Films were deposited for four different growth durations at a given deposition condition. The changes in surface morphology and growth behavior of diamond particles with growth duration were investigated ex situ using field emission scanning electron microscopy and 2D confocal Raman depth spectral imaging, respectively. A surface morphological transition from faceted microcrystalline nature to nanocrystalline nature was observed as a function of growth duration in the case of isolated diamond particles grown on both unseeded and catalyst pre-treated substrates. However, such a morphological transition was not observed on the simultaneously grown continuous diamond thin films on seeded substrates. 2D confocal Raman depth spectral imaging of diamond particles showed that the local growth of CNTs did not affect the growth behavior of neighboring diamond particles on catalyst pre-treated substrates. These observations emphasize the importance of surface chemical reactions at the growth site in deciding sp2 or sp3 carbon growth and the final grain size of the diamond films.

Fabrication of microchannels in polycrystalline diamond using pre-fabricated Si substrates

In this paper, we report on a simple, feasible method to fabricate microchannels in diamond. Polycrystalline diamond microchannels were produced by fabricating trenches in a Si wafer and subsequently depositing a thin layer of diamond onto this substrate using the hot filament vapor deposition technique. Fabrication of trenches in the Si substrate at different depths was carried out by standard photolithography, and the subsequent deposition of the diamond layer was performed by the hot filament chemical vapor deposition technique. The growth mechanism of diamond that leads to the formation of closed diamond microchannels is discussed in detail based on the Knudsen number and growth chemistry of diamond. Variations in the crystallite size, crystalline quality, and thickness of the diamond layer along the trench depths were systematically analyzed using cross-sectional scanning electron microscopy and Raman spectroscopy. Defect density and formation of non-diamond forms of carbon in the diamond layer were ...

PLD Growth of CNTs using a Nanostuctured Ni Buffer Layer: Dependence of H2 partial Pressure

The effect of hydrogen partial pressure on the growth of CNT thin films using on-axis PLD has been studied. Using nickel as buffer layer, carbon nanotubes can be produced with good yield in Hydrogen atmosphere. We have found strong visible-near infrared (NIR) photoluminescence (PL) from carbon nanotube thin films synthesized under various hydrogen partial pressures. The present result shows that bright, narrow PL from CNTs can be obtained without any post growth processing.