Manfred Deicher

Studies of semiconductors

Abstract The recent progress in semiconductor technology calls for an excellent control of defects, both intrinsic defects (vacancies, interstitials, antisites) and extrinsic (dopants, impurity atoms). This requires techniques that are able to detect defects at constantly decreasing concentrations. The ability of identifying very low defect concentrations is the strength of spectroscopic techniques using radioactive dopants, like Mossbauer effect, perturbed γγ angular correlation, or tracer diffusion. Similarly, electrical and optical spectroscopic techniques profit from the use of radioactive dopants. The potential of these techniques will be illustrated by presenting results obtained for various intrinsic and extrinsic defects in Si, Ge, III–V, and II–VI semiconductors.

The strange diffusivity of Ag atoms in CdTe

Abstract The diffusion of Ag atoms in CdTe was investigated using the radiotracer 111Ag, which was introduced by implantation with an energy of 60 or 80xa0keV. The measured diffusion profiles are explained by assuming the existence of a repulsive interaction between Ag and residual Cu atoms causing a drift of the Ag atoms towards the centre of the crystal, which supposes the diffusion in a concentration gradient. This effect vanishes if the Ag concentration is increased and becomes more pronounced if the crystals are simultaneously co-doped with Cu.

Potassium self-diffusion in a K-rich single-crystal alkali feldspar

The paper reports potassium diffusion measurements performed on gem-quality single-crystal alkali feldspar in the temperature range from 1169 to 1021xa0K. Natural sanidine from Volkesfeld, Germany was implanted with

Structural properties of the donor indium in nanocrystalline ZnO

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In and Cd as defect traps in titanium dioxide

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Structural and optical characterization of indium-antimony complexes in ZnO

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