Mang Niu

Enhanced photoelectrochemical performance of rutile TiO2 by Sb-N donor-acceptor coincorporation from first principles calculations

An effective non-metal (N) and non-transition metal (Sb) passivated co-doping approach is proposed to improve the photoelectochemical performance of rutile TiO2 for water-splitting by using first-principles calculations. It is found that the band edges of N + Sb co-doped TiO2 match with the redox potentials of water, and a narrow band gap (2.0 eV) is achieved for enhanced visible light absorption. The compensated donor (Sb) and acceptor (N) pairs could prevent the recombination of photo-generated electron-hole pairs. In addition, the N + Sb defect pairs tend to bind with each other, which could enhance the stability and N concentration of the system.

SiH/TiO2 and GeH/TiO2 Heterojunctions: Promising TiO2-based Photocatalysts under Visible Light

We use hybrid density functional calculations to find that the monolayer silicane (SiH) and the anatase TiO2(101) composite (i.e. the SiH/TiO2 heterojunction) is a promising TiO2-based photocatalyst under visible light. The band gap of the SiH/TiO2(101) heterojunction is 2.082 eV, which is an ideal material for the visible-light photoexcitation of electron-hole pairs. Furthermore, the SiH/TiO2(101) heterojunction has a favorable type-II band alignment and thus the photoexcited electron can be injected to the conduction band of anatase TiO2 from that of silicane. Finally, the proper interface charge distribution facilitates the carrier separation in the SiH/TiO2(101) interface region. The electron injection and carrier separation can prevent the recombination of electron-hole pairs. Our calculation results suggest that such electronic structure of SiH/TiO2(101) heterojunction has significant advantages over these of doped TiO2 systems for visible-light photocatalysis.

Bandgap engineering of Magnéli phase TinO2n−1: Electron-hole self-compensation

An electron-hole self-compensation effect is revealed and confirmed in nitrogen doped Magnéli phase Ti(n)O(2n-1) (n = 7, 8, and 9) by using hybrid density functional theory calculations. We found that the self-compensation effect between the free electrons in Magnéli phase Ti(n)O(2n-1) (n = 7, 8, and 9) and the holes induced by p-type nitrogen doping could not only prevent the recombination of photo-generated electron-hole pairs, but also lead to an effective bandgap reduction. This novel electron-hole self-compensation effect may provide a new approach for bandgap engineering of Magnéli phase metal suboxides.