Marcel Pasquinelli
Aix-Marseille University
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Featured researches published by Marcel Pasquinelli.
Journal of Applied Physics | 2006
Sébastien Dubois; Olivier Palais; Marcel Pasquinelli; S. Martinuzzi; C. Jaussaud; N. Rondel
In this paper, the impact of iron contamination on the conversion efficiency of single-crystalline p-type silicon solar cells is investigated by means of the combination of numerical simulations and experimental data, taking into account the more recent results about the properties of iron in single-crystalline silicon. Numerical simulations highlight the fill factor losses due to the injection-level dependence of the bulk lifetime, which attenuates the decrease of the open circuit voltage and thus that of the solar cell conversion efficiency with iron concentration. Gettering and hydrogenation effects are quantified by means of experimental results obtained from voluntarily contaminated solar cells and integrated in the simulations. The results show that iron appears to be a metallic impurity rather well tolerated in p-type single-crystalline silicon solar cells, because its injection-level dependent bulk lifetime, like its abilities to be gettered and to be passivated by hydrogenation, limits its influe...
Journal of Applied Physics | 2007
Sébastien Dubois; Olivier Palais; P. J. Ribeyron; N. Enjalbert; Marcel Pasquinelli; S. Martinuzzi
The influence of intentional iron bulk contamination on the performances of boron doped p-type multicrystalline silicon solar cells was investigated. Solar cells were made from iron contaminated wafers, with an initial dissolved iron concentration 100 times higher than that of standard wafers. Nevertheless, the conversion efficiency of these cells was not impacted by this intentional contamination. We showed that this tolerance toward iron was due to the efficiency of the gettering and hydrogenation effects, complementary in this material. While phosphorus diffusion (extracting more than 99% of the iron from the bulk) is slightly limited in regions of high dislocation density, hydrogen diffuses through the whole thickness of the wafer and passivates defects and remaining impurities, with its diffusion being faster along extended defects
Journal of Applied Physics | 2006
Sébastien Dubois; Olivier Palais; Marcel Pasquinelli; S. Martinuzzi; C. Jaussaud
The influence of a gold bulk contamination on the performances of boron doped p-type crystalline silicon solar cells is investigated for different base doping levels and different kinds of materials, such as float zone Si, Czochralski Si, and multicrystalline Si. Solar cells are made from intentionally contaminated silicon wafers. By monitoring the evolution of the electrically active substitutional gold concentration by means of bulk lifetime and minority carrier diffusion length measurements, this paper highlights the eventual gettering or hydrogenation effects occurring throughout the whole process but also of the danger of such an impurity in materials containing large densities of extended defects generating recombination centers by means of the impurity-defect interaction.
Journal of Applied Physics | 2010
D. Maestre; Olivier Palais; Damien Barakel; Marcel Pasquinelli; Claude Alfonso; Fabrice Gourbilleau; M. De Laurentis; Andrea Irace
SiO2 multilayers with embedded Si nanocrystals (Si-ncs) were investigated as an approach for developing highly efficient all Si tandem solar cells. The nanostructured samples, fabricated by means of a reactive magnetron sputtering, were structurally and optoelectronically characterized using different techniques. High resolution transmission electron microscopy (TEM) and energy filtered images in TEM show a high density of Si-nc with uniform sizes below 4 nm, while electrical characterization indicates high resistance values (102 kΩ) of these samples. In order to develop a better understanding of the optoelectronical behavior, photocurrent I-V curves were measured, obtaining variations under “dark” or “illumination” conditions. Recombination lifetimes in the order of tenths of nanoseconds were estimated by applying the transverse pump/probe technique.
Journal of Applied Physics | 1996
J. J. Simon; Isabelle Périchaud; N. Burle; Marcel Pasquinelli; S. Martinuzzi
Dislocation arrays are investigated in float zone (FZ) grown silicon wafers by the light beam induced current (LBIC) mapping technique at various wavelengths and by deep level transient spectroscopy (DLTS). The LBIC technique allows us to recognize and detect these arrays and to evaluate their recombination strength. Dislocations are found to be less recombining in (100)‐oriented FZ samples than in (111) oriented ones. In FZ dislocated wafers, a phosphorus diffusion strongly attenuates the LBIC contrast of dislocations, depending on the duration and temperature of the treatment. Electrical activity of the defects, which are still physically present, as verified by x‐ray topography, seems to disappear. Simultaneously, the peak intensities of DLTS spectra related to dislocations are reduced and this reduction depends on the phosphorus diffusion temperature and duration.
Materials Science Forum | 2009
Laurent Ottaviani; Olivier Palais; Damien Barakel; Marcel Pasquinelli
We report on measurements of the minority carrier lifetime for different epitaxial 4H-SiC layers by using the microwave photoconductivity decay (µ-PCD) method. This is a non-contacting, non-destructive method very useful for the monitoring of recombination processes in semiconductor material. Distinct samples have been analyzed, giving different lifetime values. Transmittance and absorption spectra have also been carried out. The n-type layers, giving rise to a specific absorption peak near 470 nm, are not sensitive to optical excitation for the used wavelengths, as opposite to p-type layers whose lifetime values depend on thickness and doping.
Applied Physics Letters | 2006
Stéphane Rathgeb; Jean-Pierre Moeglin; Alain Boffy; Marcel Pasquinelli; Olivier Palais
We present experimental and theoretical results on InAsSbP∕InAs photodetectors for infrared detection. An unexpected hysteresis has been shown during the current-voltage I(V) investigations (300K). Drastic changes in the hysteresis cycle are observed depending on the temperature of the heterostructure. Additionally, the time step of the measurements has an influence on the hysteresis form. The appearance of such hysteresis can be explained by a tunneling effect and by considering the temperature of the structure. Experimental I(V) characteristics are in good agreement with the tunnel current coupled to a thermal approach.
Materials Science Forum | 2012
Béchir Dridi Rezgui; Virginie Mong-The Yen; Isabelle Périchaud; Damien Barakel; Marcel Pasquinelli; Olivier Palais
Light-induced defect generation seriously reduces the minority-carrier lifetime of crystalline silicon (c-Si) wafers which causes a decrease in solar cell efficiency. In this paper we investigate the impact of boron-oxygen complexes and iron impurities on the light induced minority-carrier lifetime degradation in c-Si, comparing electronic grade and upgraded metallurgical grade materials. For the later, the characteristic of the decay process is shown to be composed of a fast initial decay and a subsequent slow asymptotic decay. We conclude that the dissociation of iron-boron pairs must be taken into account to explain the light-induced lifetime reduction.
international conference on clean electrical power | 2011
Marcel Pasquinelli; Damien Barakel
Todays photovoltaic (PV) industry is growing up at a rapid rate, but it could be faster by reducing costs for both the final products and the capital investment required for scale-up. In this work, we have studied the possibility to use conventional silicon solar cell for low concentrated applications (X10–X100). The first result is that p type bulk silicon, as it was used in conventional solar cells technology, gives best results than n type only for the Jsc parameter. For concentration factors in the range X = 10 to 20, higher efficiencies (η = 16%) are obtained with the two type of solar cells.
Journal of Modern Physics | 2018
Rémi Ndioukane; Moussa Touré; Diouma Kobor; Laurence Motte; Marcel Pasquinelli; Jeanne Solard
This work involves an investigation of nanostructures, microelectronic properties and domain engineering of nanoparticles thin layers of Pb(Zn1/ 3Nb2/3)O3-PbTiO3 (PZN-PT) ferroelectric single crystals deposited on nanostructured silicon substrate. In this study, devices made from PZN-4.5PT nanoparticles thin films successfully deposited on silicon substrate have been studied and discussed. SEM images show the formation of local black circles and hexagonal shapes probably due to the nucleation of a new Si-gel component or phase induced by annealing. Micro Xray Fluorescence mapping shows that the high values of Si and B atoms (≅7 and 4 normalized unit respectively) can be explained by the fact that the substrate is p-type silicon. The most interesting result of optical measurements is the very good absorption for all the thin films in UV, Visible and NIR regions with values from 70% to 90% in UV, from 75% to 93% in Visible and NIR. Tauc plots present particularities (rarely encountered behavior) with different segments or absorption changes showing the presence of multiple band gaps coming from the heterogeneity of the thin films (nanowires, gel and nanoparticles). Their values are 1.9 and 2.8 eV for DKRN-Gel, 2.1 and 3.1 eV for DKRN-UD and 2.1 and 3.2 eV for DKRN-D) corresponding respectively to the band gap of nanowires and that of the gel while the last ones correspond to the undoped and doped nanoparticles (3.1 and 3.2 eV respectively).