Marco Malvestuto
Elettra Sincrotrone Trieste
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Publication
Featured researches published by Marco Malvestuto.
Angewandte Chemie | 2015
Lucia Amidani; Alberto Naldoni; Marco Malvestuto; Marcello Marelli; Pieter Glatzel; Vladimiro Dal Santo; F. Boscherini
Exploiting plasmonic Au nanoparticles to sensitize TiO2 to visible light is a widely employed route to produce efficient photocatalysts. However, a description of the atomic and electronic structure of the semiconductor sites in which charges are injected is still not available. Such a description is of great importance in understanding the underlying physical mechanisms and to improve the design of catalysts with enhanced photoactivity. We investigated changes in the local electronic structure of Ti in pure and N-doped nanostructured TiO2 loaded with Au nanoparticles during continuous selective excitation of the Au localized surface plasmon resonance with X-ray absorption spectroscopy (XAS) and resonant inelastic X-ray scattering (RIXS). Spectral variations strongly support the presence of long-lived charges localized on Ti states at the semiconductor surface, giving rise to new laser-induced low-coordinated Ti sites.
Scientific Reports | 2016
Barbara Casarin; Antonio Caretta; Jamo Momand; B.J. Kooi; Marcel A. Verheijen; Valeria Bragaglia; Raffaella Calarco; M Marina Chukalina; X Xiaoming Yu; J. Robertson; Frl Felix Lange; Matthias Wuttig; Andrea Redaelli; Enrico Varesi; F. Parmigiani; Marco Malvestuto
The technological success of phase-change materials in the field of data storage and functional systems stems from their distinctive electronic and structural peculiarities on the nanoscale. Recently, superlattice structures have been demonstrated to dramatically improve the optical and electrical performances of these chalcogenide based phase-change materials. In this perspective, unravelling the atomistic structure that originates the improvements in switching time and switching energy is paramount in order to design nanoscale structures with even enhanced functional properties. This study reveals a high- resolution atomistic insight of the [GeTe/Sb2Te3] interfacial structure by means of Extended X-Ray Absorption Fine Structure spectroscopy and Transmission Electron Microscopy. Based on our results we propose a consistent novel structure for this kind of chalcogenide superlattices.
Catalysis Science & Technology | 2016
Alberto Naldoni; Francesca Riboni; Marcello Marelli; Filippo Bossola; G. Ulisse; Aldo Di Carlo; Igor Píš; Silvia Nappini; Marco Malvestuto; Maria Vittoria Dozzi; Rinaldo Psaro; Elena Selli; Vladimiro Dal Santo
Aiming at understanding how plasmonic reactions depend on important parameters such as metal loading and strong metal–support interaction (SMSI), we report the plasmonic photodegradation of formic acid (FA) under green LED irradiation employing three TiO2 supports (stoichiometric TiO2, N-doped TiO2, black TiO2) modified with Au nanoparticles (NPs) 3–6 nm in size. The rate of FA photooxidation follows different trends depending on Au loading for stoichiometric and doped Au/TiO2 materials. In the first case, the only contribution of hot electron transfer produces a volcano-shaped curve of photoreaction rates with increasing Au loading. When TiO2 contains intra-bandgap states the photoactivity increases linearly with the amount of Au NPs due to the concomitant enhancement produced by hot electron transfer and plasmon resonant energy transfer (PRET). The role of PRET is supported by finite element method simulations, which show that the increase in both Au NP inter-distance and SMSI enhances the probability of charge carrier generation at the Au/TiO2 interface.
Physical Review B | 2016
Antonio Caretta; Barbara Casarin; Paola Di Pietro; A. Perucchi; S. Lupi; Valeria Bragaglia; Raffaella Calarco; Felix Rolf Lutz Lange; Matthias Wuttig; F. Parmigiani; Marco Malvestuto
The extraordinary electronic and optical properties of the crystal-to-amorphous transition in phase-change materials have led to important developments in memory applications. A promising outlook is offered by nanoscaling such phase-change structures. Following this research line, we study the interband optical transmission spectra of nanoscaled
Scientific Reports | 2016
M. Dell’Angela; F. Hieke; Marco Malvestuto; L. Sturari; S. Bajt; I. V. Kozhevnikov; J. Ratanapreechachai; A. Caretta; B. Casarin; F. Glerean; A. M. Kalashnikova; R. V. Pisarev; Y.-D. Chuang; G. Manzoni; Federico Cilento; R. Mincigrucci; A. Simoncig; E. Principi; C. Masciovecchio; L. Raimondi; N. Mahne; C. Svetina; M. Zangrando; R. Passuello; G. Gaio; M. Prica; M. Scarcia; G. Kourousias; R. Borghes; L. Giannessi
\text{GeTe}/{\mathrm{Sb}}_{2}{\mathrm{Te}}_{3}
Physical Review B | 2016
Marco Malvestuto; Antonio Caretta; Barbara Casarin; Federico Cilento; Martina Dell'Angela; Daniele Fausti; Raffaella Calarco; B.J. Kooi; Enrico Varesi; J. Robertson; F. Parmigiani
chalcogenide superlattice films. We determine, for films with varying stacking sequence and growth methods, the density and scattering time of the free carriers, and the characteristics of the valence-to-conduction transition. It is found that the free carrier density decreases with increasing GeTe content, for sublayer thicknesses below
Journal of Synchrotron Radiation | 2016
Cristian Svetina; N. Mahne; Lorenzo Raimondi; Antonio Caretta; Barbara Casarin; Martina Dell'Angela; Marco Malvestuto; F. Parmigiani; Marco Zangrando
\ensuremath{\sim}3
Proceedings of SPIE | 2014
Cristian Svetina; Martina Dell'Angela; N. Mahne; Marco Malvestuto; Fulvio Parmigiani; Lorenzo Raimondi; Marco Zangrando
nm. A simple band model analysis suggests that GeTe and
Physical Review B | 2012
P. Vilmercati; C. Parks Cheney; Federica Bondino; Elena Magnano; Marco Malvestuto; Michael A. McGuire; Athena Safa-Sefat; Brian C. Sales; D. Mandrus; David J. Singh; Michelle Johannes; Norman Mannella
{\mathrm{Sb}}_{2}{\mathrm{Te}}_{3}
Nanoscale | 2018
Barbara Casarin; Antonio Caretta; Bin Chen; B.J. Kooi; Roberta Ciprian; F. Parmigiani; Marco Malvestuto
layers mix, forming a standard GeSbTe alloy buffer layer. We show that it is possible to control the electronic transport properties of the films by properly choosing the deposition layer thickness, and we derive a model for arbitrary film stacks.