Marco Moors

Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems

A detailed understanding of the resistive switching mechanisms that operate in redox-based resistive random-access memories (ReRAM) is key to controlling these memristive devices and formulating appropriate design rules. Based on distinct fundamental switching mechanisms, two types of ReRAM have emerged: electrochemical metallization memories, in which the mobile species is thought to be metal cations, and valence change memories, in which the mobile species is thought to be oxygen anions (or positively charged oxygen vacancies). Here we show, using scanning tunnelling microscopy and supported by potentiodynamic current-voltage measurements, that in three typical valence change memory materials (TaO(x), HfO(x) and TiO(x)) the host metal cations are mobile in films of 2 nm thickness. The cations can form metallic filaments and participate in the resistive switching process, illustrating that there is a bridge between the electrochemical metallization mechanism and the valence change mechanism. Reset/Set operations are, we suggest, driven by oxidation (passivation) and reduction reactions. For the Ta/Ta2O5 system, a rutile-type TaO2 film is believed to mediate switching, and we show that devices can be switched from a valence change mode to an electrochemical metallization mode by introducing an intermediate layer of amorphous carbon.

Resistive Switching Mechanisms on TaOx and SrRuO3 Thin-Film Surfaces Probed by Scanning Tunneling Microscopy.

The local electronic properties of tantalum oxide (TaOx, 2 ≤ x ≤ 2.5) and strontium ruthenate (SrRuO3) thin-film surfaces were studied under the influence of electric fields induced by a scanning tunneling microscope (STM) tip. The switching between different redox states in both oxides is achieved without the need for physical electrical contact by controlling the magnitude and polarity of the applied voltage between the STM tip and the sample surface. We demonstrate for TaOx films that two switching mechanisms operate. Reduced tantalum oxide shows resistive switching due to the formation of metallic Ta, but partial oxidation of the samples changes the switching mechanism to one mediated mainly by oxygen vacancies. For SrRuO3, we found that the switching mechanism depends on the polarity of the applied voltage and involves formation, annihilation, and migration of oxygen vacancies. Although TaOx and SrRuO3 differ significantly in their electronic and structural properties, the resistive switching mechanisms could be elaborated based on STM measurements, proving the general capability of this method for studying resistive switching phenomena in different classes of transition metal oxides.

Structure Determination of Au on Pt(111) Surface: LEED, STM and DFT Study

Low-energy electron diffraction (LEED), scanning tunneling microscopy (STM) and density functional theory (DFT) calculations have been used to investigate the atomic and electronic structure of gold deposited (between 0.8 and 1.0 monolayer) on the Pt(111) face in ultrahigh vacuum at room temperature. The analysis of LEED and STM measurements indicates two-dimensional growth of the first Au monolayer. Change of the measured surface lattice constant equal to 2.80 Å after Au adsorption was not observed. Based on DFT, the distance between the nearest atoms in the case of bare Pt(111) and Au/Pt(111) surface is equal to 2.83 Å, which gives 1% difference in comparison with STM values. The first and second interlayer spacing of the clean Pt(111) surface are expanded by +0.87% and contracted by −0.43%, respectively. The adsorption energy of the Au atom on the Pt(111) surface is dependent on the adsorption position, and there is a preference for a hollow fcc site. For the Au/Pt(111) surface, the top interlayer spacing is expanded by +2.16% with respect to the ideal bulk value. Changes in the electronic properties of the Au/Pt(111) system below the Fermi level connected to the interaction of Au atoms with Pt(111) surface are observed.

Structural and compositional characterization of ultrathin titanium oxide films grown on Pt3Ti(111)

We have investigated the growth of ultrathin titanium oxide (TiO(x)) films on a Pt(3)Ti(111) single crystal surface as a function of oxidation temperature (300-1000 K) and oxygen exposure (up to 4500 l) by means of Auger electron spectroscopy, low-energy electron diffraction, ultraviolet photoelectron spectroscopy and high-resolution electron energy loss spectroscopy (HREELS). Both the surface composition and the surface structure of the resulting TiO(x) films exhibit a strong dependence on the preparation conditions. Loss of the chemical order and Ti segregation are observed at the Pt(3)Ti(111) surface upon oxygen exposures of more than 135 l at 1000 K. Increasing oxygen exposure enhances Ti segregation and oxide growth. At a threshold of ≈220 l (at 1000 K) a transition in the oxide structure occurs, namely from a (6 × 3√3) rectangular structure (a = 16.6 Å, b = 14.4 Å) below 220 l to a (7 × 7)R21.8° hexagonal structure (a = b = 19.3 Å) above 220 l. Two additional incommensurate rectangular metastable structures are observed for the highest oxygen exposures (above 900 l) at intermediate oxidation temperatures (800-900 K). In all cases the changes in the valence band spectra and the work function with respect to the clean Pt(3)Ti(111) surface are independent of the chosen oxidation parameters. Based on their HREELS spectra we identify the (6 × 3√3) and (7 × 7)R21.8° structures grown at 1000 K with a stoichiometric TiO phase, while the other and less stable oxide phases grown at 800-900 K exhibit more complex phonon structures that could not simply be associated with any of the stoichiometric phases TiO, Ti(2)O(3) or TiO(2). Our results are rather similar to those found by Granozzi et al for the deposition of Ti onto a Pt(111) surface in an oxygen atmosphere, except a few interesting deviations as a consequence of the different preparation conditions.

Characterization of bimetallic Au–Pt(111) surfaces

Structural and electronic properties of ultrathin Au films deposited on Pt(111) and annealed at different temperatures have been studied by ultraviolet photoelectron spectroscopy (UPS), photoemission of adsorbed xenon (PAX) and low energy electron diffraction (LEED). The LEED measurements indicate an initial pseudomorphic growth of the Au films. The UPS and PAX experiments show a strong temperature dependence of the surface morphology. The surface covered with Au at 150 K is quite rough but smoothens significantly above room temperature. At a temperature of 750 K intermixing and the formation of an Au–Pt surface alloy start at the interface. The electronic properties of this surface alloy seem to be nearly independent from the originally deposited Au amount in the investigated range of 1–10 monolayers. The removal of Au from the surface regions has also been verified by scanning tunneling microscopy. Adsorption experiments with CO as a titration agent show a significantly lower affinity of the Au–Pt surface alloy in comparison with the clean Pt surface.

Phthalocyanine adsorption on Au(1 1 0): 1D ordering and adaptive reconstruction

The adsorption of metal-free phthalocyanine molecules on an anisotropic Au(1 1 0)(1  ×  2) surface has been studied with ultraviolet (UV) photoemission, low-energy electron diffraction and low-temperature scanning tunneling microscopy. In all cases, the molecules form rows in the [1 [Formula: see text] 0] direction, i.e. along the troughs of the reconstructed substrates. However, depending on the exposure and adsorption temperature, the substrate maintains (1  ×  2)- or transforms into a (1  ×  3)-reconstruction, and the molecular separation along the rows shrink from six to five times the Au-Au interatomic distance. The results are in agreement with previous density functional theory (DFT) calculations.