Marie-Blandine Martin
Centre national de la recherche scientifique
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Publication
Featured researches published by Marie-Blandine Martin.
ACS Nano | 2012
Bruno Dlubak; Marie-Blandine Martin; Robert S. Weatherup; Heejun Yang; C. Deranlot; Raoul Blume; Robert Schloegl; Albert Fert; A. Anane; Stephan Hofmann; Pierre Seneor; J. Robertson
We report on graphene-passivated ferromagnetic electrodes (GPFE) for spin devices. GPFE are shown to act as spin-polarized oxidation-resistant electrodes. The direct coating of nickel with few layer graphene through a readily scalable chemical vapor deposition (CVD) process allows the preservation of an unoxidized nickel surface upon air exposure. Fabrication and measurement of complete reference tunneling spin valve structures demonstrate that the GPFE is maintained as a spin polarizer and also that the presence of the graphene coating leads to a specific sign reversal of the magneto-resistance. Hence, this work highlights a novel oxidation-resistant spin source which further unlocks low cost wet chemistry processes for spintronics devices.
ACS Nano | 2014
Marie-Blandine Martin; Bruno Dlubak; Robert S. Weatherup; Heejun Yang; C. Deranlot; K. Bouzehouane; F. Petroff; A. Anane; Stephan Hofmann; J. Robertson; Pierre Seneor
We report on the successful integration of low-cost, conformal, and versatile atomic layer deposited (ALD) dielectric in Ni–Al2O3–Co magnetic tunnel junctions (MTJs) where the Ni is coated with a spin-filtering graphene membrane. The ALD tunnel barriers, as thin as 0.6 nm, are grown layer-by-layer in a simple, low-vacuum, ozone-based process, which yields high-quality electron-transport barriers as revealed by tunneling characterization. Even under these relaxed conditions, including air exposure of the interfaces, a significant tunnel magnetoresistance is measured highlighting the robustness of the process. The spin-filtering effect of graphene is enhanced, leading to an almost fully inversed spin polarization for the Ni electrode of −42%. This unlocks the potential of ALD for spintronics with conformal, layer-by-layer control of tunnel barriers in magnetic tunnel junctions toward low-cost fabrication and down-scaling of tunnel resistances.
Journal of the American Chemical Society | 2014
Robert S. Weatherup; Hakim Amara; Raoul Blume; Bruno Dlubak; Bernhard C. Bayer; Mamadou Diarra; Mounib Bahri; Andrea Cabrero-Vilatela; Sabina Caneva; Piran R. Kidambi; Marie-Blandine Martin; C. Deranlot; Pierre Seneor; Robert Schloegl; François Ducastelle; Christophe Bichara; Stephan Hofmann
The dynamics of the graphene–catalyst interaction during chemical vapor deposition are investigated using in situ, time- and depth-resolved X-ray photoelectron spectroscopy, and complementary grand canonical Monte Carlo simulations coupled to a tight-binding model. We thereby reveal the interdependency of the distribution of carbon close to the catalyst surface and the strength of the graphene–catalyst interaction. The strong interaction of epitaxial graphene with Ni(111) causes a depletion of dissolved carbon close to the catalyst surface, which prevents additional layer formation leading to a self-limiting graphene growth behavior for low exposure pressures (10–6–10–3 mbar). A further hydrocarbon pressure increase (to ∼10–1 mbar) leads to weakening of the graphene–Ni(111) interaction accompanied by additional graphene layer formation, mediated by an increased concentration of near-surface dissolved carbon. We show that growth of more weakly adhered, rotated graphene on Ni(111) is linked to an initially higher level of near-surface carbon compared to the case of epitaxial graphene growth. The key implications of these results for graphene growth control and their relevance to carbon nanotube growth are highlighted in the context of existing literature.
Mrs Bulletin | 2012
Pierre Seneor; Bruno Dlubak; Marie-Blandine Martin; A. Anane; H. Jaffrès; Albert Fert
Because of its fascinating electronic properties, graphene is expected to produce breakthroughs in many areas of nanoelectronics. For spintronics, its key advantage is the expected long spin lifetime, combined with its large electron velocity. In this article, we review recent theoretical and experimental results showing that graphene could be the long-awaited platform for spintronics. A critical parameter for both characterization and devices is the resistance of the contact between the electrodes and the graphene, which must be large enough to prevent quenching of the induced spin polarization but small enough to allow for the detection of this polarization. Spin diffusion lengths in the 100-{\mu}m range, much longer than those in conventional metals and semiconductors, have been observed. This could be a unique advantage for several concepts of spintronic devices, particularly for the implementation of complex architectures or logic circuits in which information is coded by pure spin currents.
Nano Letters | 2016
Sabina Caneva; Robert S. Weatherup; Bernhard C. Bayer; Raoul Blume; Andrea Cabrero-Vilatela; Philipp Braeuninger-Weimer; Marie-Blandine Martin; Ruizhi Wang; Carsten Baehtz; Robert Schloegl; Jannik C. Meyer; Stephan Hofmann
Highly controlled Fe-catalyzed growth of monolayer hexagonal boron nitride (h-BN) films is demonstrated by the dissolution of nitrogen into the catalyst bulk via NH3 exposure prior to the actual growth step. This “pre-filling” of the catalyst bulk reservoir allows us to control and limit the uptake of B and N species during borazine exposure and thereby to control the incubation time and h-BN growth kinetics while also limiting the contribution of uncontrolled precipitation-driven h-BN growth during cooling. Using in situ X-ray diffraction and in situ X-ray photoelectron spectroscopy combined with systematic growth calibrations, we develop an understanding and framework for engineering the catalyst bulk reservoir to optimize the growth process, which is also relevant to other 2D materials and their heterostructures.
Optics Letters | 2016
Evdokia Dremetsika; Bruno Dlubak; Simon-Pierre Gorza; Charles Ciret; Marie-Blandine Martin; Stephan Hofmann; Pierre Seneor; Daniel Dolfi; Serge Massar; Philippe Emplit; Pascal Kockaert
By means of the ultrafast optical Kerr effect method coupled to optical heterodyne detection (OHD-OKE), we characterize the third-order nonlinear response of graphene and compare it to experimental values obtained by the Z-scan method on the same samples. From these measurements, we estimate a negative nonlinear refractive index for monolayer graphene, n2=-1.1×10-13 m2/W. This is in contradiction to previously reported values, which leads us to compare our experimental measurements obtained by the OHD-OKE and the Z-scan method with theoretical and experimental values found in the literature and to discuss the discrepancies, taking into account parameters such as doping.
Applied Physics Letters | 2015
Marie-Blandine Martin; Bruno Dlubak; Robert S. Weatherup; M Piquemal-Banci; Hyoung Woo Yang; Raoul Blume; Robert Schloegl; Sophie Collin; F. Petroff; Stephan Hofmann; J. Robertson; A. Anane; Pierre Seneor
We report on the demonstration of ferromagnetic spin injectors for spintronics which are protected against oxidation through passivation by a single layer of graphene. The graphene monolayer is directly grown by catalytic chemical vapor deposition on pre-patterned nickel electrodes. X-ray photoelectron spectroscopy reveals that even with its monoatomic thickness, monolayer graphene still efficiently protects spin sources against oxidation in ambient air. The resulting single layer passivated electrodes are integrated into spin valves and demonstrated to act as spin polarizers. Strikingly, the atom-thick graphene layer is shown to be sufficient to induce a characteristic spin filtering effect evidenced through the sign reversal of the measured magnetoresistance.
2D Materials | 2016
Jack A. Alexander-Webber; Abhay A. Sagade; Zenas A. Van Veldhoven; Philipp Braeuninger-Weimer; Ruizhi Wang; Andrea Cabrero-Vilatela; Marie-Blandine Martin; Jinggao Sui; Malcolm Connolly; Stephan Hofmann
We demonstrate a simple, scalable approach to achieve encapsulated graphene transistors with negligible gate hysteresis, low doping levels and enhanced mobility compared to as-fabricated devices. We engineer the interface between graphene and atomic layer deposited (ALD) Al
Applied Physics Letters | 2008
Marie-Blandine Martin; J. Mangeney; P. Crozat; Y. Chassagneux; Raffaele Colombelli; N. Zerounian; Laurent Vivien; K. Blary
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Nano Letters | 2016
Alberto Montanaro; Sana Mzali; Jean-Paul Mazellier; Odile Bezencenet; Christian Larat; Stephanie Molin; Loïc Morvan; Pierre Legagneux; Daniel Dolfi; Bruno Dlubak; Pierre Seneor; Marie-Blandine Martin; Stephan Hofmann; J. Robertson; Alba Centeno; Amaia Zurutuza
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