Mariela Menghini

Type-1.5 Superconductivity

We demonstrate the existence of a novel superconducting state in high quality two-component MgB2 single crystalline superconductors where a unique combination of both type-1 (lambda{1}/xi{1}<1/sqrt[2]) and type-2 (lambda{2}/xi{2}>1/sqrt[2]) superconductor conditions is realized for the two components of the order parameter. This condition leads to a vortex-vortex interaction attractive at long distances and repulsive at short distances, which stabilizes unconventional stripe- and gossamerlike vortex patterns that we have visualized in this type-1.5 superconductor using Bitter decoration and also reproduced in numerical simulations.

Tensile strained GeSn on Si by solid phase epitaxy

We demonstrate single crystalline GeSn with tensile strain on silicon substrates. Amorphous GeSn layers are obtained by limiting the adatom surface mobility during deposition. Subsequent annealing transforms the amorphous layer into single crystalline GeSn by solid phase epitaxy. Excellent structural quality is demonstrated for layers with up to 6.1% of Sn. The GeSn layers show tensile strain (up to +0.34%), which lowers the difference between direct and indirect band transition and makes this method promising for obtaining direct band gap group IV layers. GeSn with 4.5% Sn shows increased optical absorption compared to Ge and an optical band gap of 0.52 eV.

Tuning Quantum Corrections and Magnetoresistance in ZnO Nanowires by Ion Implantation

Using ion implantation, the electrical as well as the magnetotransport properties of individual ZnO nanowires (NWs) can be tuned. The virgin NWs are configured as field-effect transistors which are in the enhancement mode. Al-implanted NWs reveal a three-dimensional metallic-like behavior, for which the magnetoresistance is well described by a semiempirical model that takes into account the presence of doping induced local magnetic moments and of two conduction bands. On the other hand, one-dimensional electron transport is observed in Co-implanted NWs. At low magnetic fields, the anisotropic magnetoresistance can be described in the framework of weak electron localization in the presence of strong spin-orbit scattering. From the weak localization, a large phase coherence length is inferred that reaches up to 800 nm at 2.5 K. The temperature-dependent dephasing is shown to result from a one-dimensional Nyquist noise-related mechanism. At the lowest temperatures, the phase coherence length becomes limited by magnetic scattering.

Dendritic flux penetration in Pb films with a periodic array of antidots

We explore the flux-jump regime in type-II Pb thin films with a periodic array of antidots by means of magneto-optical measurements. A direct visualization of the magnetic flux distribution allows us to identify a rich morphology of flux penetration patterns. We determine the phase boundary

High quality epitaxial Dy3Ge5 films grown on Ge(001) substrates

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Relaxor Ferroelectricity and Magnetoelectric Coupling in ZnO–Co Nanocomposite Thin Films: Beyond Multiferroic Composites

between dendritic penetration at low temperatures and a smooth flux invasion at high temperatures and fields. For the whole range of fields and temperatures studied, guided vortex motion along the principal axes of the square pinning array is clearly observed. In particular, the branching process of the dendrite expansion is fully governed by the underlying pinning topology. A comparative study between macroscopic techniques and direct local visualization sheds light onto the puzzling

First-order phase transition from the vortex liquid to an amorphous solid

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Evidence of the metal-insulator transition in ultrathin unstrained V2O3 thin films

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Imaging the structure of the interface between symmetries interconnected by a discontinuous transition

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Critical current and topology of the supercooled vortex state in NbSe2

-independent magnetic response observed at low temperatures and fields. Finally, we find that the distribution of avalanche sizes at low temperatures can be described by a power law with exponent