Mariusz Graczyk

Improving stamps for 10 nm level wafer scale nanoimprint lithography

The smaller the features on the stamp the more important are the interactions between stamp and polymer layer. A stamp rich in small structures will effectively show a surface area enlargement, which generally leads to adhesion of the polymer to the stamp. This makes a subsequent imprint impossible without troublesome and time-consuming cleaning. The anti-adhesion properties of Si- or SiO2-based stamps can be improved by binding fluorinated silanes covalently to the surface. In this paper, we demonstrate that the deposition procedure as well as the environment during deposition are important with respect to the quality and performance of the molecular layer

Fabrication of Si-based nanoimprint stamps with sub-20 nm features

We present two alternative methods for fabrication of nanoimprint lithography stamps in SiO2 with sub-20 nm features: (a) optimized electron beam lithography (EBL) and lift-off patterning of a 15-nm thick Cr mask, and (b) aerosol deposition of W particles in the 20-nm size range. In both cases, the pattern transfer into SiO2 was performed using reactive ion etching (RIE) with CHF3 as etch gas. In the first approach, we used a double layer resist system (PMMA/ZEP 520A7 positive resists) for the EBL exposure. Resist thickness, exposure dose and development time were optimized to obtain 15-20 nm features after Cr lift-off. In the second approach, we used size selected W aerosol particles as etch masks during etching of SiO2. Both methods of stamp fabrication are compared and discussed

Nanoimprint- and UV-lithography: Mix&Match process for fabrication of interdigitated nanobiosensors

A complete nanobiosensor structure consisting of a 200 @mm x 200 @mm area containing 100 nm sized interdigitated nanoelectrodes with varied interelectrode distances has been fabricated using nanoimprint lithography (NIL) in combination with UV-lithography. The complete structure has been characterized with admittance spectroscopy. In the paper are discussed the needs and key issues for nanosensors and the capability offered by using NIL for fabrication of such sensors.

Lift-off process for nanoimprint lithography

We report a novel a lift-off method for nanoimprint lithography. This is a bi-layer method, using a polymethyl methacrylate (PMMA) on lift-off layer (LOL) resist scheme. For the imprint step, direct evidence for good pattern transfer down to 20 nm is shown. Oxygen plasma ashing is required to remove residual PMMA. A liquid solvent, MF 319, is used to transfer the pattern down to the silicon. The LOL is dissolved isotropically while the PMMA is unaffected. Ashing time can kept to a minimum through the wet etch method. This reduces the line widening effect. After metal evaporation a two-step lift-off process prevents metal flakes from adhering to the surface electrostatically. At first warm acetone breakes apart the metal layer and dissolves the PMMA, then warm Remover S-1165 removes the LOL and remaining metal. Structures of lines down to 50 mn and dots with a diameter of sub 20 nm are presented.

Polymer stamps for nanoimprinting

Stamp fabrication for nanoimprinting can be significantly simplified, when specialized crosslinking polymers are applied to pattern definition. The polymer patterns can be used as stamps themselves. Two possibilities are reported: (1) An e-beam sensitive resist was developed, which enables the fabrication of polymer-on-silicon stamps. Patterns with a feature size of 70 nm could be created. (2) Full plastic stamps were obtained by a casting-moulding technique, which enable pattern transfer from any conventional mould. The quality of the two stamp variants were proved by imprinting experiments.

Study of photocurrent generation in InP nanowire-based p(+)-i-n(+) photodetectors

We report on electrical and optical properties of p+-i-n+ photodetectors/solar cells based on square millimeter arrays of InP nanowires (NWs) grown on InP substrates. The study includes a sample series where the p+-segment length was varied between 0 and 250 nm, as well as solar cells with 9.3% efficiency with similar design. The electrical data for all devices display clear rectifying behavior with an ideality factor between 1.8 and 2.5 at 300 K. From spectrally resolved photocurrent measurements, we conclude that the photocurrent generation process depends strongly on the p+-segment length. Without a p+-segment, photogenerated carriers funneled from the substrate into the NWs contribute strongly to the photocurrent. Adding a p+-segment decouples the substrate and shifts the depletion region, and collection of photogenerated carriers, to the NWs, in agreement with theoretical modeling. In optimized solar cells, clear spectral signatures of interband transitions in the zinc blende and wurtzite InP layers of the mixed-phase i-segments are observed. Complementary electroluminescence, transmission electron microscopy (TEM), as well as measurements of the dependence of the photocurrent on angle of incidence and polarization, support our interpretations.

Development and characterization of silane antisticking layers on nickel-based stamps designed for nanoimprint lithography

In this study we will report on the development of a process to establish antisticking layers on nickel-based stamps, which are used in several industrial applications of nanoimprint lithography or related methods. The fluorinated alkyl silane films have been deposited onto different Ni-based stamp surfaces in order to minimize the adhesion tendency at the stamp/polymer interface. Film thickness, chemical composition, purity, and binding mechanisms of the silane groups to different stamp surface materials have been determined by photoelectron spectroscopy (XPS). In the case of electroplated nickel stamps—where low imprint qualities are observed—multilayer thick films cover the stamp surfaces, consisting of polymerized, cross-linked alkyl silanes, which are poorly bound to the surface. In order to overcome these restrictions a 100 A thick polycrystalline titanium layer has been established in a sandwich position between the nickel substrate and the silane film. Here, silane film thicknesses in the monomolecular region together with evidences for strong covalent linkage between the silane groups and the oxidized Ti surface can be concluded from the XPS results, leading to film properties and imprint qualities, which are comparable to those formerly observed for silicon stamps.

III-V Nanowire Synthesis by Use of Electrodeposited Gold Particles.

Semiconductor nanowires are great candidates for building novel electronic devices. Considering the cost of fabricating such devices, substrate reuse and gold consumption are the main concerns. Here we report on implementation of high throughput gold electrodeposition for selective deposition of metal seed particles in arrays defined by lithography for nanowire synthesis. By use of this method, a reduction in gold consumption by a factor of at least 300 was achieved, as compared to conventional thermal evaporation for the same pattern. Because this method also facilitates substrate reuse, a significantly reduced cost of the final device is expected. We investigate the morphology, crystallography, and optical properties of InP and GaAs nanowires grown from electrodeposited gold seed particles and compare them with the properties of nanowires grown from seed particles defined by thermal evaporation of gold. We find that nanowire synthesis, as well as the material properties of the grown nanowires are comparable and quite independent of the gold deposition technique. On the basis of these results, electrodeposition is proposed as a key technology for large-scale fabrication of nanowire-based devices.

Electrochemical Investigation of Nickel Pattern Electrodes in H[sub 2]/H[sub 2]O and CO/CO[sub 2] Atmospheres

In this study, nickel pattern electrodes were electrochemically investigated in a three-electrode setup, operating both with H-2/H2O and CO/CO2 atmospheres. Heating introduced structural differences in the nickel layer among the pattern electrodes, which appear to affect the electrode performance. Both dense and porous nickel pattern electrodes were formed by heating. Holes appeared in the nickel layer of the porous pattern electrodes, where the open cavity triple phase boundaries exhibited different limiting processes than open triple phase boundary electrodes of the dense electrode. As the temperature was raised in the experiment, the electrodes stabilized, with a degraded behavior that seemed to be strongly coupled to the structural changes in the electrode. It was possible to compare literature results with high temperature impedance measurements in H-2/H2O presented here, while new results at lower temperatures in H-2/H2O are also presented. Impedance spectroscopy measurements were performed, and the gas dependence of the polarization resistance was observed as the mixture ratios and temperatures were varied in both atmospheres. A positive relation between the polarization resistance and the partial pressure of CO was determined for the dense nickel pattern electrode, which agrees with previous results using nickel point electrodes

Electrochemical Investigation of Nickel Pattern Electrodes in H-2/H2O and CO/CO2 Atmospheres

In this study, nickel pattern electrodes were electrochemically investigated in a three-electrode setup, operating both with H-2/H2O and CO/CO2 atmospheres. Heating introduced structural differences in the nickel layer among the pattern electrodes, which appear to affect the electrode performance. Both dense and porous nickel pattern electrodes were formed by heating. Holes appeared in the nickel layer of the porous pattern electrodes, where the open cavity triple phase boundaries exhibited different limiting processes than open triple phase boundary electrodes of the dense electrode. As the temperature was raised in the experiment, the electrodes stabilized, with a degraded behavior that seemed to be strongly coupled to the structural changes in the electrode. It was possible to compare literature results with high temperature impedance measurements in H-2/H2O presented here, while new results at lower temperatures in H-2/H2O are also presented. Impedance spectroscopy measurements were performed, and the gas dependence of the polarization resistance was observed as the mixture ratios and temperatures were varied in both atmospheres. A positive relation between the polarization resistance and the partial pressure of CO was determined for the dense nickel pattern electrode, which agrees with previous results using nickel point electrodes