Mark A. Foster

Broad-band optical parametric gain on a silicon photonic chip

Developing an optical amplifier on silicon is essential for the success of silicon-on-insulator (SOI) photonic integrated circuits. Recently, optical gain with a 1-nm bandwidth was demonstrated using the Raman effect, which led to the demonstration of a Raman oscillator, lossless optical modulation and optically tunable slow light. A key strength of optical communications is the parallelism of information transfer and processing onto multiple wavelength channels. However, the relatively narrow Raman gain bandwidth only allows for amplification or generation of a single wavelength channel. If broad gain bandwidths were to be demonstrated on silicon, then an array of wavelength channels could be generated and processed, representing a critical advance for densely integrated photonic circuits. Here we demonstrate net on/off gain over a wavelength range of 28 nm through the optical process of phase-matched four-wave mixing in suitably designed SOI channel waveguides. We also demonstrate wavelength conversion in the range 1,511–1,591 nm with peak conversion efficiencies of +5.2 dB, which represents more than 20 times improvement on previous four-wave-mixing efficiencies in SOI waveguides. These advances allow for the implementation of dense wavelength division multiplexing in an all-silicon photonic integrated circuit. Additionally, all-optical delays, all-optical switches, optical signal regenerators and optical sources for quantum information technology, all demonstrated using four-wave mixing in silica fibres, can now be transferred to the SOI platform.

Nonlinear optics in photonic nanowires

We review recent research on nonlinear optical interactions in waveguides with sub-micron transverse dimensions, which are termed photonic nanowires. Such nanowaveguides, fabricated from glasses or semiconductors, provide the maximal confinement of light for index guiding structures enabling large enhancement of nonlinear interactions and group-velocity dispersion engineering. The combination of these two properties make photonic nanowires ideally suited for many nonlinear optical applications including the generation of single-cycle pulses and optical processing with sub-mW powers.

Tailored anomalous group-velocity dispersion in silicon channel waveguides.

We present the first experimental demonstration of anomalous group-velocity dispersion (GVD) in silicon waveguides across the telecommunication bands. We show that the GVD in such waveguides can be tuned from -2000 to 1000 ps/(nm*km) by tailoring the cross-sectional size and shape of the waveguide.

Silicon-chip-based ultrafast optical oscilloscope

With the realization of faster telecommunication data rates and an expanding interest in ultrafast chemical and physical phenomena, it has become important to develop techniques that enable simple measurements of optical waveforms with subpicosecond resolution. State-of-the-art oscilloscopes with high-speed photodetectors provide single-shot waveform measurement with 30-ps resolution. Although multiple-shot sampling techniques can achieve few-picosecond resolution, single-shot measurements are necessary to analyse events that are rapidly varying in time, asynchronous, or may occur only once. Further improvements in single-shot resolution are challenging, owing to microelectronic bandwidth limitations. To overcome these limitations, researchers have looked towards all-optical techniques because of the large processing bandwidths that photonics allow. This has generated an explosion of interest in the integration of photonics on standard electronics platforms, which has spawned the field of silicon photonics and promises to enable the next generation of computer processing units and advances in high-bandwidth communications. For the success of silicon photonics in these areas, on-chip optical signal-processing for optical performance monitoring will prove critical. Beyond next-generation communications, silicon-compatible ultrafast metrology would be of great utility to many fundamental research fields, as evident from the scientific impact that ultrafast measurement techniques continue to make. Here, using time-to-frequency conversion via the nonlinear process of four-wave mixing on a silicon chip, we demonstrate a waveform measurement technology within a silicon-photonic platform. We measure optical waveforms with 220-fs resolution over lengths greater than 100 ps, which represent the largest record-length-to-resolution ratio (>450) of any single-shot-capable picosecond waveform measurement technique. Our implementation allows for single-shot measurements and uses only highly developed electronic and optical materials of complementary metal-oxide-semiconductor (CMOS)-compatible silicon-on-insulator technology and single-mode optical fibre. The mature silicon-on-insulator platform and the ability to integrate electronics with these CMOS-compatible photonics offer great promise to extend this technology into commonplace bench-top and chip-scale instruments.

Broad-band continuous-wave parametric wavelength conversion in silicon nanowaveguides

We demonstrate highly broad-band frequency conversion via four-wave mixing in silicon nanowaveguides. Through appropriate engineering of the waveguide dimensions, conversion bandwidths greater than 150 nm are achieved and peak conversion efficiencies of -9.6 dB are demonstrated. Furthermore, utilizing fourth-order dispersion, wave-length conversion across four telecommunication bands from 1477 nm (S-band) to 1672 nm (U-band) is demonstrated with an efficiency of -12 dB.

Generation of correlated photons in nanoscale silicon waveguides

.We experimentally study the generation of correlated pairs of photons through four-wave mixing (FWM) in embedded silicon waveguides. The waveguides, which are designed to exhibit anomalous group-velocity dispersion at wavelengths near 1555 nm, allow phase matched FWM and thus efficient pair-wise generation of non-degenerate signal and idler photons. Photon counting measurements yield a coincidence-to-accidental ratio (CAR) of around 25 for a signal (idler) photon production rate of about 0.05 per pulse. We characterize the variation in CAR as a function of pump power and pump-to-sideband wavelength detuning. These measurements represent a first step towards the development of tools for quantum information processing which are based on CMOS-compatible, silicon-on-insulator technology.

Ultra-low power parametric frequency conversion in a silicon microring resonator

We demonstrate parametric wavelength conversion via four-wave mixing using ultra-low peak pump powers of a few milliwatts in a micrometer-scale silicon device. The response time of our device is 100 ps allowing for implementation in high-bandwidth optical communications. At these ultra-low power levels and microscale sizes, it should be possible to realize hundreds of these devices operating simultaneously on a single chip.

All-optical switching on a silicon chip

We present an experimental demonstration of fast all-optical switching on a silicon photonic integrated device by employing a strong light-confinement structure to enhance sensitivity to small changes in the refractive index. By use of a control light pulse with energy as low as 40 pJ, the optical transmission of the structure is modulated by more than 97% with a time response of 450 ps.

Modelocking and femtosecond pulse generation in chip-based frequency combs

We investigate simultaneously the temporal and optical and radio-frequency spectral properties of parametric frequency combs generated in silicon-nitride microresonators and observe that the system undergoes a transition to a mode-locked state. We demonstrate the generation of sub-200-fs pulses at a repetition rate of 99 GHz. Our calculations show that pulse generation in this system is consistent with soliton modelocking. Ultimately, such parametric devices offer the potential of producing ultra-short laser pulses from the visible to mid-infrared regime at repetition rates from GHz to THz.

All-optical slow-light on a photonic chip

We demonstrate optically tunable delays in a silicon-on-insulator planar waveguide based on slow light induced by stimulated Raman scattering (SRS). Inside an 8-mm-long nanoscale waveguide, we produce a group-index change of 0.15 and generate controllable delays as large as 4 ps for signal pulses as short as 3 ps. The scheme can be implemented at bandwidths exceeding 100 GHz for wavelengths spanning the entire low-loss fiber-optics communications window and thus represents an important step in the development of chip-scale photonics devices that process light with light.