Mark A. Logan

Model studies of dielectric thin film growth: Chemical vapor deposition of SiO2

The reactive adsorption and decomposition of tetraethoxysilane is compared on Si(100) and SiO2 surfaces. The adsorption and decomposition behavior is compared to that observed for ethanol adsorption on both these surfaces. Tetraethoxysilane and ethanol both decompose to produce ethylene and hydrogen on Si(100). Ethylene desorption is also observed from decomposition of these molecules on SiO2. Ethanol adsorption on SiO2 is shown to model the chemistry of tetraethoxysilane on this surface. However, ethanol is significantly more reactive than tetraethoxysilane on the clean Si(100) surface. The decomposition is shown to be reaction limited, and distinct from that of adsorbed ethylene. The adsorbed species produced from adsorption of tetraethoxysilane on SiO2 at 450 K is shown to be a mixture of di‐ and triethoxysiloxanes.

The chemical vapor deposition of SiO2 from tetraethoxysilane: The effect of the surface hydroxyl concentration

The dissociative adsorption of tetraethoxysilane (TEOS) on SiO2 and the subsequent decomposition of the resulting siloxane species has been studied using Fourier transform infrared transmission spectroscopy. The adsorption and decomposition processes have been studied as a function of the initial surface hydroxyl concentration. The results are compared to previous, complementary studies of the surface chemistry of ethanol on SiO2 surfaces and the temperature programmed desorption of TEOS on Si(100).

The chemical vapor deposition of SiO2 from teos

Abstract The dissociative adsorption and thermal decomposition of tetraethoxysilane, TEOS, has been studied on Si(1OO) and SiO 2 . TEOS reacts with either surface at elevated temperatures to produce a mixture of di- and triethoxysiloxanes. These intermediates decompose in vacuum to evolve cthylene and deposit SiO 2 . Strong similarities are evident in the decomposition of TEOS on both surfaces.

Controlled Mass Flow of Low Volatility Liquid Source Materials

Chemical Vapor Deposition (CVD) of thin films for microelectronic devices has historically used source materials that are gases at room temperature [1]. The decision to use gases was largely a practical one based on the relative ease with which the flow of gaseous materials can be controlled. CVD of thin films plays a vital role in increased circuit density and performance of integrated circuits. Liquid sources offer alternative source composition, reaction kinetics and reaction mechanisms to optimize a given CVD process [2]. For example, CVD films of silicon dioxide (oxide) and oxide films modified to lower the glass transition temperature such a borophosphosilicate glass (BPSG) have traditionally used gaseous source materials such as silane, diborane and phosphine [3]. An all liquid system of tetraethylorthosilicate (TEOS), triethylborate (TEB) and triethylphosphine (TEPhine) has been found to offer superior conformality and overall safety [4]. However, from a practical standpoint, the all liquid system has historically suffered from reliable, reproducible mass flow control.