Martin Pavlišta

Ge–Sb–Te thin films deposited by pulsed laser: An ellipsometry and Raman scattering spectroscopy study

Pulsed laser (532 nm) deposited Ge2Sb2Te5 thin films were investigated by means of spectroscopic ellipsometry and Raman scattering spectroscopy. Tauc–Lorentz and Cody–Lorentz models were employed for the evaluation of optical functions of thin films in as-deposited (amorphous) and crystalline (cubic) phases. The models’ parameters (Lorentz oscillator amplitude, resonance energy, oscillator width, optical band gap, and Urbach energy) calculated for amorphous and crystalline states are discussed. The vibrational modes observed in Raman spectra of amorphous layers are attributed to GeTe4−nGen (n=1, 2, eventually 0) tetrahedra connected by corners (partly by edges) and SbTe3 units. The Raman spectra of crystalline thin films suggest that the local bonding arrangement around Ge atoms changes; GeTe component is thus mainly responsible for the phase transition in Ge2Sb2Te5 alloys.

Laser ablation of ternary As‐S‐Se glasses and time‐of‐flight mass spectrometric study

Ternary chalcogenide As-S-Se glasses, important for optics, computers, material science and technological applications, are often made by pulsed laser deposition (PLD) technology but the plasma composition formed during the process is mostly unknown. Therefore, the formation of clusters in a plasma plume from different glasses was followed by laser desorption ionization (LDI) or laser ablation (LA) time-of-flight mass spectrometry (TOF MS) in positive and negative ion modes. The LA of glasses of different composition leads to the formation of a number of binary As(p)S(q), As(p)Se(r) and ternary As(p)S(q)Se(r) singly charged clusters. Series of clusters with the ratio As:chalcogen = 3:3 (As(3)S(3)(+), As(3)S(2)Se(+), As(3)SSe(2)(+)), 3:4 (As(3)S(4)(+), As(3)S(3)Se(+), As(3)S(2)Se(2)(+), As(3)SSe(3)(+), As(3)Se(4)(+)), 3:1 (As(3)S(+), As(3)Se(+)), and 3:2 (As(3)S(2)(+), As(3)SSe(+), As(3)Se(2)(+)), formed from both bulk and PLD-deposited nano-layer glass, were detected. The stoichiometry of the As(p)S(q)Se(r) clusters was determined via isotopic envelope analysis and computer modeling. The structure of the clusters is discussed.

Laser desorption time‐of‐flight mass spectrometry of atomic switch memory Ge2Sb2Te5 bulk materials and its thin films

RATIONALE Although the structure of atomic switch Ge2Sb2Te5 (GST) thin films is well established, the composition of the clusters formed in the plasma plume during pulsed-laser deposition (PLD) is not known. Laser Desorption Ionization Time-of-Flight Mass Spectrometry (LDI-TOF MS) is an effective method for the generation and study of clusters formed by laser ablation of various solids and thus for determining their structural fragments. METHODS LDI of bulk or PLD-deposited GST thin layers and of various precursors (Ge, Sb, Te, and Ge-Te or Sb-Te mixtures) using a nitrogen laser (337 nm) was applied while the mass spectra were recorded in positive and negative ion modes using a TOF mass spectrometer equipped with a reflectron while the stoichiometry of the clusters formed was determined via isotopic envelope analysis. RESULTS The singly negatively or positively charged clusters identified from the LDI of GST were Ge, Ge2, GeTe, Ge2Te, Ten (n = 1-3), GeTe2, Ge2Te2, GeTe3, SbTe2, Sb2Te, GeSbTe2, Sb3Te and the low abundance ternary GeSbTe3, while the LDI of germanium telluride yielded Gem Ten (+) clusters (m = 1-3, n = 1-3). Several minor Ge-H clusters were also observed for pure germanium and for germanium telluride. Sbn clusters (n = 1-3) and the formation of binary TeSb, TeSb2 and TeSb3 clusters were detected when Sb2Te3 was examined. CONCLUSIONS This is the first report that elucidates the stoichiometry of Gem Sbn Tep clusters formed in plasma when bulk or nano-layers of GST material are ablated. The clusters were found to be fragments of the original structure. The results might facilitate the development of PLD technology for this memory phase-change material.