Martin Printz

A method to simulate the observed surface properties of proton irradiated silicon strip sensors

During the scheduled high luminosity upgrade of LHC, the worlds largest particle physics accelerator at CERN, the position sensitive silicon detectors installed in the vertex and tracking part of the CMS experiment will face more intense radiation environment than the present system was designed for. To upgrade the tracker to required performance level, extensive measurements and simulations studies have already been carried out. A defect model of Synopsys Sentaurus TCAD simulation package for the bulk properties of proton irradiated devices has been producing simulations closely matching with measurements of silicon strip detectors. However, the model does not provide expected behavior due to the fluence increased surface damage. The solution requires an approach that does not affect the accurate bulk properties produced by the proton model, but only adds to it the required radiation induced properties close to the surface. These include the observed position dependency of the strip detectors charge collection efficiency (CCE). In this paper a procedure to find a defect model that reproduces the correct CCE loss, along with other surface properties of a strip detector up to a fluence

Simulations of Inter-Strip Capacitance and Resistance for the Design of the CMS Tracker Upgrade

1.5times10^{15}

T-CAD analysis of electric fields in n-in-p silicon strip detectors in dependence on the p-stop pattern and doping concentration

1 MeV n

Radiation hard sensor materials for the CMS Tracker Phase II Upgrade - Charge collection of different bulk polarities ☆

_{textrm{eq}}

P-stop isolation study of irradiated n-in-p type silicon strip sensors for harsh radiation environments

cm

Design optimization of pixel sensors using device simulations for the phase-II CMS tracker upgrade

^{-2}

A fourfold segmented silicon strip sensor with read-out at the edges

, will be presented. When applied with CCE loss measurements at different fluences, this method may provide means for the parametrization of the accumulation of oxide charge at the SiO2/Si interface as a function of dose.

Development of radiation-hard n-in-p type silicon detectors and studies on modules with transverse momentum discrimination for the CMS detector at the LHC

An upgrade of the LHC accelerator, the high luminosity phase of the LHC (HL-LHC), is foreseen for 2023. The tracking system of the CMS experiment at the HL-LHC will face a more intense radiation environment than the present system was designed for. This requires an upgrade of the full tracker, which will be equipped with higher granularity as well as radiation harder sensors, which can withstand higher radiation levels and occupancies. In order to address the problems caused by the intense radiation environment, extensive measurements and simulation studies have been initiated for investigating these different design and material options for silicon micro-strip sensors. The simulation studies are based on commercial packages (Silvaco and Synopsys TCAD) and aim to investigate sensor characteristics before and after irradiation for fluences up to 1.5 ·1015 neq/cm. A defect model was developed to implement the radiation damage and tuned to fit experimental measurements. This paper covers the simulation of the inter-strip capacitance and resistance both before and after irradiation. Both properties are crucial for the design of future sensors, being responsible for strip noise and isolation, in turn affecting resolution. A detailed understanding of these parameters is required for an optimal sensor design for the future CMS tracker. Technology and Instrumentation in Particle Physics 2014, 2-6 June, 2014 Amsterdam, the Netherlands