Martin Weides

Quantum ground state and single-phonon control of a mechanical resonator

Quantum mechanics provides a highly accurate description of a wide variety of physical systems. However, a demonstration that quantum mechanics applies equally to macroscopic mechanical systems has been a long-standing challenge, hindered by the difficulty of cooling a mechanical mode to its quantum ground state. The temperatures required are typically far below those attainable with standard cryogenic methods, so significant effort has been devoted to developing alternative cooling techniques. Once in the ground state, quantum-limited measurements must then be demonstrated. Here, using conventional cryogenic refrigeration, we show that we can cool a mechanical mode to its quantum ground state by using a microwave-frequency mechanical oscillator—a ‘quantum drum’—coupled to a quantum bit, which is used to measure the quantum state of the resonator. We further show that we can controllably create single quantum excitations (phonons) in the resonator, thus taking the first steps to complete quantum control of a mechanical system.

Violation of Bell's inequality in Josephson phase qubits

The measurement process plays an awkward role in quantum mechanics, because measurement forces a system to ‘choose’ between possible outcomes in a fundamentally unpredictable manner. Therefore, hidden classical processes have been considered as possibly predetermining measurement outcomes while preserving their statistical distributions. However, a quantitative measure that can distinguish classically determined correlations from stronger quantum correlations exists in the form of the Bell inequalities, measurements of which provide strong experimental evidence that quantum mechanics provides a complete description. Here we demonstrate the violation of a Bell inequality in a solid-state system. We use a pair of Josephson phase qubits acting as spin-1/2 particles, and show that the qubits can be entangled and measured so as to violate the Clauser–Horne–Shimony–Holt (CHSH) version of the Bell inequality. We measure a Bell signal of 2.0732 ± 0.0003, exceeding the maximum amplitude of 2 for a classical system by 244 standard deviations. In the experiment, we deterministically generate the entangled state, and measure both qubits in a single-shot manner, closing the detection loophole. Because the Bell inequality was designed to test for non-classical behaviour without assuming the applicability of quantum mechanics to the system in question, this experiment provides further strong evidence that a macroscopic electrical circuit is really a quantum system.

Low current resistive switching in Cu–SiO2 cells

Resistive switching in Ir∕SiO2∕Cu memory cells was investigated. The proposed switching mechanism is the formation and dissolution of a Cu filament. Under positive bias, Cu cations migrate through SiO2 and are reduced at the counterelectrode forming a filament. The filament is dissolved under reverse bias. The write current can be reduced down to 10pA which is four orders of magnitude below published values and shows the potential of extremely low power-consuming memory cells. Furthermore, a comparison of the charge flow in the high resistance state and the energy for writing is given for write currents between 25pA and 10nA.

Implementing the Quantum von Neumann Architecture with Superconducting Circuits

A quantum version of a central processing unit was created with superconducting circuits and elements. The von Neumann architecture for a classical computer comprises a central processing unit and a memory holding instructions and data. We demonstrate a quantum central processing unit that exchanges data with a quantum random-access memory integrated on a chip, with instructions stored on a classical computer. We test our quantum machine by executing codes that involve seven quantum elements: Two superconducting qubits coupled through a quantum bus, two quantum memories, and two zeroing registers. Two vital algorithms for quantum computing are demonstrated, the quantum Fourier transform, with 66% process fidelity, and the three-qubit Toffoli-class OR phase gate, with 98% phase fidelity. Our results, in combination especially with longer qubit coherence, illustrate a potentially viable approach to factoring numbers and implementing simple quantum error correction codes.

Probing Cu doped Ge0.3Se0.7 based resistance switching memory devices with random telegraph noise

The ultimate sensitivity of any solid state device is limited by fluctuations. Fluctuations are manifestations of the thermal motion of matter and the discreteness of its structure which are also inherent ingredients during the resistive switching process of resistance random access memory (RRAM) devices. In quest for the role of fluctuations in different memory states and to develop resistive switching based nonvolatile memory devices, here we present our study on random telegraph noise (RTN) resistance fluctuations in Cu doped Ge0.3Se0.7 based RRAM cells. The influence of temperature and electric field on the RTN fluctuations is studied on different resistance states of the memory cells to reveal the dynamics of the underlying fluctuators. Our analysis indicates that the observed fluctuations could arise from thermally activated transpositions of Cu ions inside ionic or redox “double-site traps” triggering fluctuations in the current transport through a filamentary conducting path. Giant RTN fluctuation...

Improving the coherence time of superconducting coplanar resonators

The quality factor and energy decay time of superconducting resonators have been measured as a function of material, geometry, and magnetic field. Once the dissipation of trapped magnetic vortices is minimized, we identify surface two-level states (TLS) as an important decay mechanism. A wide gap between the center conductor and the ground plane, as well as use of the superconductor Re instead of Al, are shown to decrease loss. We also demonstrate that classical measurements of resonator quality factor at low excitation power are consistent with single-photon decay time measured using qubit-resonator swap experiments.

Deterministic Entanglement of Photons in Two Superconducting Microwave Resonators

Quantum entanglement, one of the defining features of quantum mechanics, has been demonstrated in a variety of nonlinear spinlike systems. Quantum entanglement in linear systems has proven significantly more challenging, as the intrinsic energy level degeneracy associated with linearity makes quantum control more difficult. Here we demonstrate the quantum entanglement of photon states in two independent linear microwave resonators, creating N-photon NOON states (entangled states |N0> + |0N>) as a benchmark demonstration. We use a superconducting quantum circuit that includes Josephson qubits to control and measure the two resonators, and we completely characterize the entangled states with bipartite Wigner tomography. These results demonstrate a significant advance in the quantum control of linear resonators in superconducting circuits.

0-π josephson tunnel junctions with ferromagnetic barrier

We fabricated high quality Nb/Al2O3/Ni(0.6)Cu(0.4)/Nb superconductor-insulator-ferromagnet-superconductor Josephson tunnel junctions. Using a ferromagnetic layer with a steplike thickness, we obtain a 0-pi junction, with equal lengths and critical currents of 0 and pi parts. The ground state of our 330 microm (1.3lambda(J)) long junction corresponds to a spontaneous vortex of supercurrent pinned at the 0-pi step and carrying approximately 6.7% of the magnetic flux quantum Phi(0). The dependence of the critical current on the applied magnetic field shows a clear minimum in the vicinity of zero field.

Photon shell game in three-resonator circuit quantum electrodynamics

The ability to coherently switch a state between two systems is a key requirement for quantum information processing. Such control is now demonstrated by shifting the quantum state of a microwave photon between any one of three superconducting-circuit resonators: in analogy to the classic three cups and a ball game.

Resistive switching of rose bengal devices: A molecular effect?

The resistive switching behavior of devices consisting of aluminum top electrode, molecular layer (rose bengal), and bottom electrode (zinc oxide and indium tin oxide) is examined. By measuring the current versus voltage dependence of these devices for various frequencies and by systematically varying the composition of the device, we show that the switching is an extrinsic effect that is not primarily dependent on the molecular layer. It is shown that the molecular layer is short circuited by filaments of either zinc oxide or aluminum and that the switching effect is due to a thin layer of aluminum oxide at the zinc oxide/aluminum interface.