Martin Wölz

Current path in light emitting diodes based on nanowire ensembles

Light emitting diodes (LEDs) have been fabricated using ensembles of free-standing (In, Ga)N/GaN nanowires (NWs) grown on Si substrates in the self-induced growth mode by molecular beam epitaxy. Electron-beam-induced current analysis, cathodoluminescence as well as biased μ-photoluminescence spectroscopy, transmission electron microscopy, and electrical measurements indicate that the electroluminescence of such LEDs is governed by the differences in the individual current densities of the single-NW LEDs operated in parallel, i.e. by the inhomogeneity of the current path in the ensemble LED. In addition, the optoelectronic characterization leads to the conclusion that these NWs exhibit N-polarity and that the (In, Ga)N quantum well states in the NWs are subject to a non-vanishing quantum confined Stark effect.

Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film

Vertical GaN nanowires are grown in a self-induced way on a sputtered Ti film by plasma-assisted molecular beam epitaxy. Both in situ electron diffraction and ex situ ellipsometry show that Ti is converted to TiN upon exposure of the surface to the N plasma. In addition, the ellipsometric data demonstrate this TiN film to be metallic. The diffraction data evidence that the GaN nanowires have a strict epitaxial relationship to this film. Photoluminescence spectroscopy of the GaN nanowires shows excitonic transitions virtually identical in spectral position, line width, and decay time to those of state-of-the-art GaN nanowires grown on Si. Therefore, the crystalline quality of the GaN nanowires grown on metallic TiN and on Si is equivalent. The freedom to employ metallic substrates for the epitaxial growth of semiconductor nanowires in high structural quality may enable novel applications that benefit from the associated high thermal and electrical conductivity as well as optical reflectivity.

Strain Engineering of Nanowire Multi-Quantum Well Demonstrated by Raman Spectroscopy

An analysis of the strain in an axial nanowire superlattice shows that the dominating strain state can be defined arbitrarily between unstrained and maximum mismatch strain by choosing the segment height ratios. We give experimental evidence for a successful strain design in series of GaN nanowire ensembles with axial InxGa1-xN quantum wells. We vary the barrier thickness and determine the strain state of the quantum wells by Raman spectroscopy. A detailed calculation of the strain distribution and LO phonon frequency shift shows that a uniform in-plane lattice constant in the nanowire segments satisfactorily describes the resonant Raman spectra, although in reality the three-dimensional strain profile at the periphery of the quantum wells is complex. Our strain analysis is applicable beyond the InxGa1-xN/GaN system under study, and we derive universal rules for strain engineering in nanowire heterostructures.

Correlation between In content and emission wavelength of InxGa1−xN/GaN nanowire heterostructures

GaN nanowire ensembles with axial In(x)Ga(1-x)N multi-quantum-wells (MQWs) were grown by molecular beam epitaxy. In a series of samples we varied the In content in the MQWs from almost zero to around 20%. Within the nanowire ensemble, the MQWs fluctuate strongly in composition and size. Statistical information about the composition was obtained from x-ray diffraction and Raman spectroscopy. Photoluminescence at room temperature was obtained in the range of 2.2 to 2.5 eV, depending on In content. Contrary to planar MQWs, the intensity increases with increasing In content. We compare the observed emission energies with transition energies obtained from a one-dimensional model, and conclude that several mechanisms for carrier localization affect the luminescence of these three-dimensional structures.

Luminous Efficiency of Axial InxGa1–xN/GaN Nanowire Heterostructures: Interplay of Polarization and Surface Potentials

Using continuum elasticity theory and an eight-band k·p formalism, we study the electronic properties of GaN nanowires with axial InxGa1-xN insertions. The three-dimensional strain distribution in these insertions and the resulting distribution of the polarization fields are fully taken into account. In addition, we consider the presence of a surface potential originating from Fermi level pinning at the sidewall surfaces of the nanowires. Our simulations reveal an in-plane spatial separation of electrons and holes in the case of weak piezoelectric potentials, which correspond to an In content and layer thickness required for emission in the blue and violet spectral range. These results explain the quenching of the photoluminescence intensity experimentally observed for short emission wavelengths. We devise and discuss strategies to overcome this problem.

Localization and defects in axial (In,Ga)N/GaN nanowire heterostructures investigated by spatially resolved luminescence spectroscopy

(In,Ga)N insertions embedded in self-assembled GaN nanowires (NWs) are of current interest for applications in solid-state light emitters. Such structures exhibit a notoriously broad emission band. We use cathodoluminescence spectral imaging in a scanning electron microscope and micro-photoluminescence spectroscopy on single NWs to learn more about the mechanisms underlying this emission. We observe a shift of the emission energy along the stack of six insertions within single NWs that may be explained by compositional pulling. Our results also corroborate reports that the localization of carriers at potential fluctuations within the insertions plays a crucial role for the luminescence of these NW based emitters. Furthermore, we resolve contributions from both structural and point defects in our measurements.

Quenching of the luminescence intensity of GaN nanowires under electron beam exposure: impact of C adsorption on the exciton lifetime

Electron irradiation of GaN nanowires in a scanning electron microscope strongly reduces their luminous efficiency as shown by cathodoluminescence imaging and spectroscopy. We demonstrate that this luminescence quenching originates from a combination of charge trapping at already existing surface states and the formation of new surface states induced by the adsorption of C on the nanowire sidewalls. The interplay of these effects leads to a complex temporal evolution of the quenching, which strongly depends on the incident electron dose per area. Time-resolved photoluminescence measurements on electron-irradiated samples reveal that the carbonaceous adlayer affects both the nonradiative and the radiative recombination dynamics.

Reliable pump sources for high-energy class lasers

High-energy class laser systems operating at high average power are destined to serve fundamental research and commercial applications. System cost is becoming decisive, and JENOPTIK supports future developments with the new range of 500 W quasi-continuous wave (QCW) laser diode bars. In response to different strategies in implementing high-energy class laser systems, pump wavelengths of 880 nm and 940 nm are available. The higher power output per chip increases array irradiance and reduces the size of the optical system, lowering system cost. Reliability testing of the 880 nm laser diode bar has shown 1 Gshots at 500 W and 300 μs pulse duration, with insignificant degradation. Parallel operation in eight-bar diode stacks permits 4 kW pulse power operation. A new high-density QCW package is under development at JENOPTIK. Cost and reliability being the design criteria, the diode stacks are made by simultaneous soldering of submounts and insulating ceramic. The new QCW stack assembly technology permits an array irradiance of 12.5 kW/cm². We present the current state of the development, including laboratory data from prototypes using the new 500 W laser diode in dense packaging.

760nm: a new laser diode wavelength for hair removal modules

A new high-power semiconductor laser diode module, emitting at 760 nm is introduced. This wavelength permits optimum treatment results for fair skin individuals, as demonstrated by the use of Alexandrite lasers in dermatology. Hair removal applications benefit from the industry-standard diode laser design utilizing highly efficient, portable and light-weight construction. We show the performance of a tap-water-cooled encapsulated laser diode stack with a window for use in dermatological hand-pieces. The stack design takes into account the pulse lengths required for selectivity in heating the hair follicle vs. the skin. Super-long pulse durations place the hair removal laser between industry-standard CW and QCW applications. The new 760 nm laser diode bars are 30% fill factor devices with 1.5 mm long resonator cavities. At CW operation, these units provide 40 W of optical power at 43 A with wall-plug-efficiency greater than 50%. The maximum output power before COMD is 90 W. Lifetime measurements starting at 40 W show an optical power loss of 20% after about 3000 h. The hair removal modules are available in 1x3, 1x8 and 2x8 bar configurations.

Influence of surface and polarization potentials on the electronic and optical properties of In x Ga 1−x N/GaN axial nanowire heterostructures

We study the influence of surface and polarization potentials on the electronic properties of axial InxGa1-xN/GaN nanowire heterostructures. Our simulations indicate nontrivial, competing influences of both these potentials on the spatial separation of electrons and holes, which are well suited to explain previous experimental observations.