Masahiro Adachi

High-Power (over 100 mW) Green Laser Diodes on Semipolar

Continuous-wave operation of InGaN green laser diodes (LDs) on semipolar {2021} GaN substrates with output powers of over 100 mW in the spectral region beyond 530 nm is demonstrated. Wall plug efficiencies (WPEs) as high as 7.0–8.9% are realized in the wavelength range of 525–532 nm, which exceed those reported for c-plane LDs. The longest lasing wavelength has reached 536.6 nm under cw operation. These results suggest that the InGaN green LDs on the {2021} plane are better suited as light sources for applications requiring wavelengths over 525 nm.

\{20\bar{2}1\}

True green GaInN laser diodes with a lasing wavelength above 525 nm under continuous wave operation have been successfully fabricated on semipolar {2021} GaN substrates by improving both the diode structure and epitaxial growth conditions. At a case temperature of 55 °C, their lifetime was estimated to be over 5000 h for an optical output power of 50 mW and over 2000 h at 70 mW.