Masahiro Suemitsu

Near-infrared–to–visible highly selective thermal emitters based on an intrinsic semiconductor

A Si nanorod array enables the concentration of thermal emission in the near-infrared range while suppressing other components. Control of the thermal emission spectra of emitters will result in improved energy utilization efficiency in a broad range of fields, including lighting, energy harvesting, and sensing. In particular, it is challenging to realize a highly selective thermal emitter in the near-infrared–to–visible range, in which unwanted thermal emission spectral components at longer wavelengths are significantly suppressed, whereas strong emission in the near-infrared–to–visible range is retained. To achieve this, we propose an emitter based on interband transitions in a nanostructured intrinsic semiconductor. The electron thermal fluctuations are first limited to the higher-frequency side of the spectrum, above the semiconductor bandgap, and are then enhanced by the photonic resonance of the structure. Theoretical calculations indicate that optimized intrinsic Si rod-array emitters with a rod radius of 105 nm can convert 59% of the input power into emission of wavelengths shorter than 1100 nm at 1400 K. It is also theoretically indicated that emitters with a rod radius of 190 nm can convert 84% of the input power into emission of <1800-nm wavelength at 1400 K. Experimentally, we fabricated a Si rod-array emitter that exhibited a high peak emissivity of 0.77 at a wavelength of 790 nm and a very low background emissivity of <0.02 to 0.05 at 1100 to 7000 nm, under operation at 1273 K. Use of a nanostructured intrinsic semiconductor that can withstand high temperatures is promising for the development of highly efficient thermal emitters operating in the near-infrared–to–visible range.

Wavelength-selective thermal emitters using Si-rods on MgO

Supporting substrates for Si rod-type photonic crystals (PCs) are investigated for realizing highly wavelength-selective near-infrared thermal emitters. Three materials—SiO2, Al2O3, and MgO—are considered for their low infrared emission (transparency) and remarkable heat resistance. Theoretical calculations of the emissivity spectra of Si-rod PCs (rod height = 500 nm, rod diameter = 300 nm, and lattice constant = 600 nm) on 50 μm-thick supporting substrates at 1400 K indicate that the long-wavelength (>3 μm) emission power from the emitter using MgO is less than 1/10 of that of the other two materials. Fabrication of the Si-rod PCs on the 50 μm-thick MgO substrate requires the insertion of a thin (30 nm) HfO2 film between MgO and Si to improve the stability at high temperatures (>1400 K). Experimental results of the fabricated structure show that at 1400 K, the ratio of emissive power at wavelengths  3 μm) emission power from the emitter using MgO is less than 1/10 of that of the other two materials. Fabrication of the Si-rod PCs on the 50 μm-thick MgO substrate requires the insertion of a thin (30 nm) HfO2 film between MgO and Si to improve the stability at high temperatures (>1400 K). Experimental results of the fabricated structure show that at 1400 K, the ratio of emissive power at wavelengths <1.8 μm to the total emissive power is 34% and that this can be increased to over 53% in an optimized rod-a...