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Dive into the research topics where Masahiro Yoshita is active.

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Featured researches published by Masahiro Yoshita.


Applied Physics Letters | 2003

One-dimensional continuum and exciton states in quantum wires

Hidefumi Akiyama; Masahiro Yoshita; Loren Pfeiffer; K. W. West; Aron Pinczuk

High-quality T-shaped quantum wires are fabricated by cleaved-edge overgrowth with molecular-beam epitaxy on the interface improved by a growth-interrupt high-temperature anneal. Characterization by micro-photoluminescence (PL) and PL excitation (PLE) spectroscopy at 5 K reveals high uniformity, a sharp spectral width, and a small Stokes shift of one-dimensional (1D) excitons. The PLE spectrum for 1D states shows a large peak of ground-state excitons and a small absorption band ascribed to 1D continuum states with an onset at 11 meV above the exciton peak.


Applied Physics Letters | 2003

Imaging of emission patterns in a T-shaped quantum wire laser

Yasushi Takahashi; Shinichi Watanabe; Masahiro Yoshita; Hirotake Itoh; Yuhei Hayamizu; Hidefumi Akiyama; Loren Pfeiffer; K. W. West

Spatially and spectrally resolved microscopic images of spontaneous and stimulated emissions are imaged at the mirror facets of a GaAs T-shaped quantum wire laser with high uniformity. Laser emission from the one-dimensional ground state reveals a circular image located at the core of a T-shaped optical waveguide but significantly smaller in area than the low power spontaneous emission from the same waveguide. These images unambiguously allow assignment of all spontaneous and laser emissions to the wire ground state and respective intersecting wells in the structure.


Applied Physics Letters | 2007

Temperature-dependent current injection and lasing in T-shaped quantum-wire laser diodes with perpendicular p- and n-doping layers

Makoto Okano; Shu Man Liu; Toshiyuki Ihara; Hirotake Itoh; Masahiro Yoshita; Hidefumi Akiyama; Loren Pfeiffer; K. W. West; Oana Malis

The authors measured the temperature dependence of the lasing properties of current-injection T-shaped GaAs∕AlGaAs quantum-wire (T-wire) lasers with perpendicular p- and n-doping layers. The T-wire lasers with high-reflectivity coatings on both cleaved facets achieved continuous-wave single-mode operation between 5 and 110K. The lowest threshold current was 2.1mA at 100K. The temperature dependences of differential quantum efficiency and threshold current were attributed mainly to that of current-injection efficiency.


Journal of Physics: Condensed Matter | 2004

One-dimensional excitonic states and lasing in highly uniform quantum wires formed by cleaved-edge overgrowth with growth-interrupt annealing

Hidefumi Akiyama; Masahiro Yoshita; L. N. Pfeiffer; K. W. West

High quality T-shaped quantum wire lasers are fabricated by cleaved-edge overgrowth with molecular beam epitaxy on an interface improved by a growth-interrupt high temperature annealing. Microphotoluminescence and photoluminescence (PL) excitation spectroscopy at low temperatures reveals the formation of quantum wires with unprecedentedly high quality, and intrinsic structures of one-dimensional (1D) free excitons, exciton excited states, and 1D continuum states. At high pumping levels, the PL evolves from showing a sharp free exciton peak via exhibiting a biexciton peak to a Coulomb correlated electron–hole plasma PL band. Lasing has been achieved with a low lasing threshold, and its emission patterns are measured in imaging experiments. The lasing energy is in the plasma PL band and is about 5xa0meV below the free exciton level. The observed shift excludes the possibility of free excitons in the lasing, and suggests a contribution from the electron–hole plasma. Single T-wire samples such as a single-quantum-wire laser and a field-effect-transistor-type doped single quantum wire are fabricated and studied optically.


Solid State Communications | 2003

Quantum wire lasers with high uniformity formed by cleaved-edge overgrowth with growth-interrupt anneal

Hidefumi Akiyama; Masahiro Yoshita; Loren Pfeiffer; K. W. West

Abstract High-quality T-shaped quantum wire lasers are fabricated by cleaved-edge overgrowth with the molecular beam epitaxy on the interface improved by a growth-interrupt high-temperature anneal. Micro-photoluminescence (PL) and PL excitation spectroscopy reveals unprecedented high quality of the wires, and structures of one-dimensional (1D) free excitons and 1D continuum states. At high pumping levels, PL evolves from a sharp free exciton peak via a biexciton peak to a red-shifted broad band. Lasing has been achieved with low lasing threshold. The lasing energy is on the red-shifted broad band and is about 5xa0meV below the free exciton. The observed shift excludes free excitons in lasing, and suggests contribution of highly Coulomb-correlated electron–hole plasma.


Physica E-low-dimensional Systems & Nanostructures | 2004

Fabrication and microscopic characterization of a single quantum-wire laser with high uniformity

Masahiro Yoshita; Yuhei Hayamizu; Hidefumi Akiyama; Loren Pfeiffer; K. W. West


2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) | 2017

Notice of Removal Diagnosis of GaInAs multiple-quantum-well solar cells with Bragg reflectors via absolute electroluminescence

Lin Zhu; Masahiro Yoshita; JiaLing Tsai; YiChin Wang; Chung-Yu Hong; Guochung Ghi; Changsu Kim; Peichen Yu; Hidefumi Akiyama


Archive | 2014

Light emitting element, reference light source, and phosphor observation method

英文 秋山; Hidefumi Akiyama; 吉田 正裕; Masahiro Yoshita; 克裕 近江谷; Yoshihiro Ohmiya; 英博 久保田; Hidehiro Kubota; 謙雄 森; Kaneo Mori; 正博 下川原; Masahiro Shimogawara


Meeting abstracts of the Physical Society of Japan | 2008

20aYK-3 Photoluminescence excitation spectroscopy on asymmetric line shapes of weakly localized excitons in a quantum well due to interface roughness

Shun Maruyama; Toshiyuki Ihara; Hirotake Itoh; Masahiro Yoshita; Hidefumi Akiyama; Loren N. Pfeiffer; Kenneth W. West


Archive | 2005

Strong photo-absorption byasingle quantum wirein waveguide-transmission measurement

Yasushi Takahashi; Yuhei Hayamizu; Hirotake Itoh; Masahiro Yoshita

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Hidefumi Akiyama

National Institute for Materials Science

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Yuhei Hayamizu

Tokyo Institute of Technology

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