Masahito Sakoda

One-step growth of SmFeAs(O,F) films by molecular beam epitaxy using FeF2 as a fluorine source

We report on one-step growth of superconducting SmFeAs(O,F) films without post-growth fluorine diffusion. One-step growth is a prerequisite for multilayer deposition, which is required for fabricating sandwich-type Josephson junctions; however, it has not been achieved because of a lack of a suitable fluorine source. We found that FeF2, a soft fluoride, decomposes at relatively low temperatures (~650 °C) and supplies fluorine as well as Fe to films. The use of FeF2 has enabled us to perform reproducible growth of SmFeAs(O,F) films with a systematic change of the films properties by varying growth parameters. Now, single-phase single-crystalline SmFeAs(O,F) films with are routinely prepared. Furthermore, the c-axis lattice parameter of the films are varied in a systematic manner with the FeF2 deposition rate, indicating that the F doping level seems to be controllable. The comparison of one-step growth and our previous two-step growth demonstrates that a more homogeneous F concentration is achieved by one-step growth, whereas higher F concentration is achieved by two-step growth.

Molecular beam epitaxy growth of SmFeAs(O,F) films with Tc = 55 K using the new fluorine source FeF3

REFeAs(O,F) (RE: rare-earth element) has the highest-Tc (∼58u2009K) among the iron-based superconductors, but a thin-film growth of REFeAs(O,F) is difficult. This is because it is not only a complex compound consisting of five elements but also requires doping of highly reactive fluorine to achieve superconductivity. We have reported in our previous article that fluorine can be supplied to a film by subliming solid-state fluorides such as FeF2 or SmF3. In this article, we report on the growth of SmFeAs(O,F) using FeF3 as an alternative fluorine source. FeF3 is solid at ambient temperatures and decomposes at temperatures as low as 100–200u2009°C, and releases fluorine-containing gas during the thermal decomposition. With this alternative fluorine source, we have grown SmFeAs(O,F) films with Tc as high as 55u2009K. This achievement demonstrates that FeF3 has potential as a fluorine source that can be employed ubiquitously for a thin-film growth of any fluorine containing compounds. One problem specific to FeF3 is that ...

Universal scaling behavior of the upper critical field in strained FeSe0.7Te0.3 thin films

Revealing the universal behaviors of iron-based superconductors (FBS) is important to elucidate the microscopic theory of superconductivity. In this work, we investigate the effect of in-plane strain on the slope of the upper critical field H c2 at the superconducting transition temperature T c (i.e. −dH c2/dT) for FeSe0.7Te0.3 thin films. The in-plane strain tunes T c in a broad range, while the composition and disorder are almost unchanged. We show that −dH c2/dT scales linearly with T c, indicating that FeSe0.7Te0.3 follows the same universal behavior as observed for pnictide FBS. The observed behavior is consistent with a multiband superconductivity paired by interband interaction such as sign change s ± superconductivity.

The influence of the in-plane lattice constant on the superconducting transition temperature of FeSe0.7Te0.3 thin films

Epitaxial Fe(Se,Te) thin films were prepared by pulsed laser deposition on (La0.18Sr0.82)(Al0.59Ta0.41)O3 (LSAT), CaF2-buffered LSAT and bare CaF2 substrates, which exhibit an almost identical in-plane lattice parameter. The composition of all Fe(Se,Te) films were determined to be FeSe0.7Te0.3 by energy dispersive X-ray spectroscopy, irrespective of the substrate. Albeit the lattice parameters of all templates have comparable values, the in-plane lattice parameter of the FeSe0.7Te0.3 films varies significantly. We found that the superconducting transition temperature (Tc) of FeSe0.7Te0.3 thin films is strongly correlated with their a-axis lattice parameter. The highest Tc of over 19 K was observed for the film on bare CaF2 substrate, which is related to unexpectedly large in-plane compressive strain originating mostly from the thermal expansion mismatch between the FeSe0.7Te0.3 film and the substrate.Epitaxial Fe(Se,Te) thin films were prepared by pulsed laser deposition on (La0.18Sr0.82)(Al0.59Ta0.41)O3 (LSAT), CaF2-buffered LSAT and bare CaF2 substrates, which exhibit an almost identical in-plane lattice parameter. The composition of all Fe(Se,Te) films were determined to be FeSe0.7Te0.3 by energy dispersive X-ray spectroscopy, irrespective of the substrate. Albeit the lattice parameters of all templates have comparable values, the in-plane lattice parameter of the FeSe0.7Te0.3 films varies significantly. We found that the superconducting transition temperature (Tc) of FeSe0.7Te0.3 thin films is strongly correlated with their a-axis lattice parameter. The highest Tc of over 19 K was observed for the film on bare CaF2 substrate, which is related to unexpectedly large in-plane compressive strain originating mostly from the thermal expansion mismatch between the FeSe0.7Te0.3 film and the substrate.